Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KF 203 TRANSISTOR Search Results

    KF 203 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    KF 203 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    schottky DIODE MOTOROLA B14

    Abstract: schottky DIODE MOTOROLA B12 kf 203 transistor MBR140 equivalent motorola power transistor 7752 DIODE MOTOROLA B14 pspice model TOTEM POLE Motorola transistors 7752 DIODE MOTOROLA B13 pspice model gate driver
    Text: MOTOROLA Order this document by AN1631/D SEMICONDUCTOR APPLICATION NOTE AN1631 Using PSPICE to Analyze Performance of Power MOSFETs in Step-Down, Switching Regulators Employing Synchronous Rectification Prepared by: Rick Honda and Scott Deuty Motorola, Inc.


    Original     		AN1631/D AN1631 AN1520. schottky DIODE MOTOROLA B14 schottky DIODE MOTOROLA B12 kf 203 transistor MBR140 equivalent motorola power transistor 7752 DIODE MOTOROLA B14 pspice model TOTEM POLE Motorola transistors 7752 DIODE MOTOROLA B13 pspice model gate driver PDF

    kf 203 transistor

    Abstract: 1E06H MOSFET and parallel Schottky diode n mosfet pspice parameters pspice model TOTEM POLE transistor schottky model spice PIN diode Pspice model delta rectifier all model Lambda Pulse Modulator pspice model gate driver
    Text: AN1631/D Using PSPICE to Analyze Performance of Power MOSFETs in Step−Down, Switching Regulators Employing Synchronous Rectification http://onsemi.com APPLICATION NOTE Prepared by: Rick Honda and Scott Deuty INTRODUCTION This paper will describe an easy method to analyze


    Original     		AN1631/D AN1520/D. r14525 kf 203 transistor 1E06H MOSFET and parallel Schottky diode n mosfet pspice parameters pspice model TOTEM POLE transistor schottky model spice PIN diode Pspice model delta rectifier all model Lambda Pulse Modulator pspice model gate driver PDF

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118 PDF

    LB 1639

    Abstract: transistor TT 3043
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP


    OCR Scan     		NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043 PDF

    NE68135

    Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o


    Original     		NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009 PDF

    1820 0944

    Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s


    Original     		NE681 NE681 1820 0944 NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 PDF

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor PDF

    Transistors BF 494

    Abstract: Transistor BJT 547 b transistor kf 469
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)


    OCR Scan     		NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469 PDF

    kf 203 transistor

    Abstract: 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL


    Original     		NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 kf 203 transistor 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE68100 NE68118 PDF

    REMA

    Abstract: granat 216 Sonneberg DIODE ga TESLA transistor Kombinat VEB A 301 transistor KF 507 tesla 516 maa 550 service-mitteilungen
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R I E V E R T R I E B R U N D F U N K U N D F E R N S E H E N JUL./AUG. 19 7 6 m SEITE 01-10 inämiy 1R A D io -teievlsion 1 GRANAT 516 Ein Exponat der Leipziger Frühjahrsmesse 1976, das in einer kleinen Menge noch im III. Quartal an den Handel ausgeliefert wird, war die


    OCR Scan     		Param24 52/PS REMA granat 216 Sonneberg DIODE ga TESLA transistor Kombinat VEB A 301 transistor KF 507 tesla 516 maa 550 service-mitteilungen PDF

    BJT characteristics

    Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		NE681 BJT characteristics NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE68100 NE68118 NE68119 PDF

    transistor "micro-x" "marking" 102

    Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		NE681 transistor "micro-x" "marking" 102 laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009 PDF

    GIJ diode

    Abstract: 3pin variable resistor mini film antenna
    Text: Surface Mount General Introduction 1 . 4*- JE Quick Reference M 1 - S rf ^ D "p 2) 2. Ä Page) General Electronic Components 4 Discrete Semiconductor Devices 10 Basic for Surface Mounting Technology 1) Surface Mounting Technology 2) Mounting Process 14


    OCR Scan     		O-220 GIJ diode 3pin variable resistor mini film antenna PDF

    kf 203 transistor

    Abstract: prf947 UHF transistor GHz
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PRF947 UHF wideband transistor Product specification Supersedes data of 1999 Mar 01 1999 Jul 23 Philips Semiconductors Product specification UHF wideband transistor PRF947 FEATURES PINNING • Small size


    Original     		M3D102 PRF947 OT323 125006/03/pp16 kf 203 transistor prf947 UHF transistor GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 PRF947 UHF wideband transistor Product specification Supersedes data of 1999 Mar 01 1999 Jul 23 Philips Semiconductors Product specification UHF wideband transistor PRF947 FEATURES PINNING • Small size PIN


    Original     		M3D102 PRF947 OT323 125006/03/pp16 PDF

    973-120

    Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST


    Original     		NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 973-120 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006 PDF

    MJE 1532

    Abstract: transistor bf 760 sot-89 Marking LB 931 NE85630 NE85635 packaging schematic NE AND micro-X NEC NE85635 2SC4226 2SC5006 2SC5011
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST


    Original     		NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 MJE 1532 transistor bf 760 sot-89 Marking LB 931 NE85630 NE85635 packaging schematic NE AND micro-X NEC NE85635 2SC4226 2SC5006 2SC5011 PDF

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


    OCR Scan     		NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1 PDF

    NE856

    Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e


    Original     		NE856 NE856 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600 PDF

    LB 122 transistor To-92

    Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)


    Original     		NE856 NE85600 24-Hour LB 122 transistor To-92 NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635 PDF

    transistor NEC D 882

    Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION


    OCR Scan     		NE856 24-Hour transistor NEC D 882 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55 PDF

    BJT BF 331

    Abstract: NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85600 NE85618 NE85619 NE85630
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)


    Original     		NE856 NE85600 24-Hour BJT BF 331 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85600 NE85618 NE85619 NE85630 PDF

    016p

    Abstract: NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011
    Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP


    Original     		NE856 016p NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011 PDF

    transistor NEC D 882 p

    Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
    Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP


    Original     		NE856 transistor NEC D 882 p transistor c 1349 Transistor BF 479 NE85630-T1-A PDF