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    10n50

    Abstract: FET 10n50 KF10N50 10n5 KF10N50F TO220IS TO-220IS
    Text: SEMICONDUCTOR KF10N50F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking KF10N50 1 F 2 No. Item 801 3 Marking Description KF KEC Fresh FET 10N50 10N50 Package & Version F TO-220IS Lot No. 801 Device Name 2008. 10. 13 Revision No : 0


    Original     		PDF KF10N50F O-220IS KF10N50 10N50 O-220IS 10n50 FET 10n50 KF10N50 10n5 KF10N50F TO220IS TO-220IS

    mosfet vdss500v, vgss 30v

    Abstract: KF10N50F KF10N50P MARKING FZ vdss500v, vgss 30v, id 25 A, KF10N50 813F2 FZ 101
    Text: SEMICONDUCTOR KF10N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N50P,KF10N50PZ This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF10N50P/F/PZ/FZ KF10N50P KF10N50PZ Fig15. Fig16. Fig17. mosfet vdss500v, vgss 30v KF10N50F MARKING FZ vdss500v, vgss 30v, id 25 A, KF10N50 813F2 FZ 101

    mosfet vdss500v, vgss 30v

    Abstract: KF10N50
    Text: SEMICONDUCTOR KF10N50PR/FR TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N50PR This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		PDF 170ns KF10N50PR/FR KF10N50PR Fig15. Fig16. Fig17. mosfet vdss500v, vgss 30v KF10N50