10101DC
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB1D2N80D/I
KHB1D2N80D
10101DC
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB1D2N80D/I
KHB1D2N80D
170mH,
dI/dt300A/,
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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660 tg diode
Abstract: No abstract text available
Text: S E M IC O N D U C T O R KHB1D2N80D/I TE CHNICAL DATA N C H A N N E L M O S FIELD EFFEC T T R A N SIS T O R G eneral Description KHB1D2N80D This planar stripe M OSFET has better characteristics, such as fast sw itching tim e, low on resistan ce, low gate charge and excellent
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OCR Scan
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KHB1D2N80D/I
KHB1D2N80D
100ns-
660 tg diode
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