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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL Polarization Dependence Loss at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.	Original	G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E01	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL Polarization Dependence Loss at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Original

G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E01

PDF