Untitled
Abstract: No abstract text available
Text: I I T C m kl I LI I C W k I t "13/4 5mm Modified Ultra Bright AlGaAs Red LED Lamps LTL-353URKR LTL-353CKR Package Dimensions Features • • • • • Ultra brightness. New sturdy leads. Versatile mounting on P.C. board or panel. I.C. compatible/low current requirements.
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LTL-353URKR
LTL-353CKR
LTL-353CKR
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Untitled
Abstract: No abstract text available
Text: • Sñ SILICON SENSORS INC D E lfl E SB ^ SS 0 0 0 0 2 0 5 0 T-41-13' I^P‘^ g è v llW jt V V ié Îô n ^ if t :- 5 ^ i 3 l ^ Gl Telephone: 608 -935-2707 ¿tWX: 910-280-1^ " " kL Silicon Sensors SIRAD 4 Gallium Aluminum Arsenide Light Emit- ^ ting Diode emits an intense spectrally narrow band of non coherent infrared energy peaking at 890 nanometers. The SIRAD 4 has a lens^ v
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T-41-13'
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FY 505
Abstract: rohm 574 A 928 000 452 NOx sensor 737 thailand 2 fy Transistors Diodes 1058T sensor nox sox co 1336T
Text: 2006 Site Report ROHM KOREA CORPORATION Overseas Group 371-11 Gasan-Dong, Gumcheon-ku, Seoul 153-803 Korea Fiscal Year Item Electric-power consumption 2004 Fuel consumption 183 Thousand m Monolithic ICs, Transistors, Diodes, LEDs, Sensors, Resistors, LED Displays
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smd diode schottky code marking 2U
Abstract: smd diode marking 2U smd diode marking codes 2U 2U marking code diode smd smd diode marking A3 sot23 MV smd marking code SOT23 sot143 marking code A3 smd diode code marking 2U marking l4 sot-23 SMD DIODE 2U
Text: SMD SCHOTTKY DIODES DESCRIPTION • Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/
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OT-23
OT-143
ODBAT54C
BAT54S
BAT74
PMBD101
PMBD352
PMBD353
PRLL5817
PRLL5818
smd diode schottky code marking 2U
smd diode marking 2U
smd diode marking codes 2U
2U marking code diode smd
smd diode marking A3 sot23
MV smd marking code SOT23
sot143 marking code A3
smd diode code marking 2U
marking l4 sot-23
SMD DIODE 2U
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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BB219
Abstract: sod80 diodes color code SOD-80 COLOR MARKING smd glass diode color codes marking KL sot-23 sot-23 pinout DIODE COLOR BAND MARKING CODES BBY39 PHILIPS DIODE COLOR BAND MARKING marking 25 SOT-23 power
Text: VARIABLE CAPACITANCE SMD DIODES DESCRIPTION • Philips Components variable capacitance varicap diodes are optimized to exhibit linear, highly dependable dynamic capacitance characteristics over the entire rated range of reverse voltage values. The devices also have very low
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BB215
BB219
BB804
BBY31
BBY39
BBY40
BBY42
BBY62
OT-23
OT-143
sod80 diodes color code
SOD-80 COLOR MARKING
smd glass diode color codes
marking KL sot-23
sot-23 pinout
DIODE COLOR BAND MARKING CODES
PHILIPS DIODE COLOR BAND MARKING
marking 25 SOT-23 power
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DIN 16901
Abstract: DIN 16901 130 ISO 2768 fK FS300R12KE4 DIN ISO 2768-M DIN 2768-M
Text: Technische Information / technical information FS300R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter
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FS300R12KE4
DIN 16901
DIN 16901 130
ISO 2768 fK
FS300R12KE4
DIN ISO 2768-M
DIN 2768-M
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DIN 16901
Abstract: DIN 16901 130 DIN ISO 2768-M DIN 16901 150 W60Y FS450R12KE4 DIN 16901 140 220 e87
Text: Technische Information / technical information FS450R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter
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FS450R12KE4
DIN 16901
DIN 16901 130
DIN ISO 2768-M
DIN 16901 150
W60Y
FS450R12KE4
DIN 16901 140
220 e87
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FF225R12ME4
Abstract: No abstract text available
Text: Technische Information / technical information FF225R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter
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FF225R12ME4
FF225R12ME4
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF225R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter
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FF225R12ME4
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DIN 16901 130
Abstract: ISO 2768 fK DIN 16901 140 fs450r12ke4 FS450R12K
Text: Technische Information / technical information FS450R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter
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FS450R12KE4
DIN 16901 130
ISO 2768 fK
DIN 16901 140
fs450r12ke4
FS450R12K
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FF450R12ME4
Abstract: 220 e87 4506G
Text: Technische Information / technical information FF450R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter
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FF450R12ME4
FF450R12ME4
220 e87
4506G
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FF300R12ME4
Abstract: No abstract text available
Text: Technische Information / technical information FF300R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter
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FF300R12ME4
FF300R12ME4
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DIN 16901 130
Abstract: DIN 16901 140 DIN 16901 ISO 2768 fK FS225R12KE4 DIN ISO 2768-M
Text: Technische Information / technical information FS225R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter
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FS225R12KE4
DIN 16901 130
DIN 16901 140
DIN 16901
ISO 2768 fK
FS225R12KE4
DIN ISO 2768-M
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skm 300gb128d
Abstract: No abstract text available
Text: SKM 300GB128D . - ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %56 1)* 23* & 4* . )#- & 7* & 9 )* 1* = )- . )#* & 4* . 14* & 7* & / 1-* . 14* & )- .
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300GB128D
300GAL128D
skm 300gb128d
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SKM300GAL128D
Abstract: SKM300GB128D skm 300gb128d
Text: SKM 300GB128D . - ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %56 1)* 23* & 4* . )#- & 7* & 9 )* 1* = )- . )#* & 4* . 14* & 7* & / 1-* . 14* & )- .
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300GB128D
300GAL128D
SKM300GAL128D
SKM300GB128D
skm 300gb128d
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Untitled
Abstract: No abstract text available
Text: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ . + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 / &( 4 /1 C AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +
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300GB123D
300GAL123D
300GAR123D
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Untitled
Abstract: No abstract text available
Text: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ . + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 / &( 4 /1 C AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +
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300GB123D
300GAL123D
300GAR123D
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SKM300GB123D
Abstract: No abstract text available
Text: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ . + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 / &( 4 /1 C AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +
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300GB123D
300GAL123D
300GAR123D
SKM300GB123D
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kl 05 diode
Abstract: HB77
Text: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ . + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* . 4 05 91 6* 4 / &( 4 /1 C AC .? 4 /51 6* 0$1 /91 $11 <<1 + + 0011
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300GB123D
300GB123D
300GAL123D
300GAR123D
kl 05 diode
HB77
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BR98
Abstract: FF1200R17KP4 9AaN
Text: Technische Information / technical information FF1200R17KP4_B2 IGBT-Module IGBT-modules * ) () * 1 + , . + /, . + / 2 + - ,! + - ,! 3 0456 7 4 89: 7 , •( •) •) •, • $ ? •0 • + * . + / / + , • • • • • / ? + / + $/ 1? 2 / 0>$ + A BA ?
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FF1200R17KP4
BR98
9AaN
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FZ3600R12HP4
Abstract: y11t 6bbn R2 KL FJ031 M6300 1n7200
Text: Technische Information / technical information FZ3600R12HP4 IGBT-Module IGBT-modules ' ' - + ( ,) + ( . , / ( * )! ( * )! -123 4 1 567 4 8 9 0 1:; 4 < ) •' • •? $ @ •$+ • • • • ( 9 + ( , , ( ) • • • , ( $, B ( ( ( ( ( $, ( !@- 9>
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FZ3600R12HP4
FZ3600R12HP4
y11t
6bbn
R2 KL
FJ031
M6300
1n7200
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6122G0
Abstract: NEC PD6121 455b kl diode 03 IC-6316B mpd 6120
Text: MOS INTEGRATED CIRCUIT M P D 6 1 2 2 M U L T I-P U R P O S E R E M O T E C O N T R O L T R A N S M IT T E R 1C C M O S LSI DESCRIPTION The //PD6122 is an infrared remote control transmitter LSI for T V , V CR , stereo components, cassette decks, air con
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uPD6122
IR30-00
VP15-00
WS60-00
b427525
6122G0
NEC PD6121
455b
kl diode 03
IC-6316B
mpd 6120
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uPD6120
Abstract: npd19 KL SN 102 PD1913 Li42 UD1943 ud271 27S9S KL 13 diode UPD6120C102
Text: MOS DIGITAL INTEGRATED CIRCU IT /¿ P D 6 1 2 0 M U L T I- P U R P O S E R E M O T E C O N T R O L T R A N S M IT T E R IC C M O S LSI D ESCRIPTIO N The pPD6120 is an LSI for the transmission of general-purpose, infrared, remote control codes to TV s, V TR s, audio equip
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uPD6120
457sas
/IPD6120
npd19
KL SN 102
PD1913
Li42
UD1943
ud271
27S9S
KL 13 diode
UPD6120C102
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