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    KM4132G271A Price and Stock

    Samsung Semiconductor KM4132G271AQ-8

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    Bristol Electronics KM4132G271AQ-8 66
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    KM4132G271AQ-8 28
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    Quest Components KM4132G271AQ-8 155
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    Samsung Semiconductor KM4132G271AQ-10

    256K X 32 VIDEO DRAM, 10 ns, PQFP100
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    Quest Components KM4132G271AQ-10 5
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    KM4132G271A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM4132G271A Samsung Electronics 128K x 32-Bit x 2 Banks Synchronous Graphic RAM Original PDF
    KM4132G271A-10 Samsung Electronics 128K x 32-Bit x 2 Banks Synchronous Graphic RAM Original PDF
    KM4132G271A-12 Samsung Electronics 128K x 32-Bit x 2 Banks Synchronous Graphic RAM Original PDF
    KM4132G271A-8 Samsung Electronics 128K x 32-Bit x 2 Banks Synchronous Graphic RAM Original PDF
    KM4132G271AQ-10 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 10ns Original PDF
    KM4132G271AQ-12 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 12ns Original PDF
    KM4132G271AQ-8 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 8ns Original PDF
    KM4132G271AQR-10 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 10ns Original PDF
    KM4132G271AQR-12 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 12ns Original PDF
    KM4132G271AQR-8 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 8ns Original PDF

    KM4132G271A Datasheets Context Search

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    DQ 51

    Abstract: KM4132G271A KM4132G271A-10 KM4132G271A-12 KM4132G271A-8
    Text: KM4132G271A CMOS SGRAM 128K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION The KM4132G271A is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits,


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    PDF KM4132G271A 32Bit KM4132G271A DQ 51 KM4132G271A-10 KM4132G271A-12 KM4132G271A-8

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


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    PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    KMM966G512AQN-G0

    Abstract: 30H22 KMM966G512AQN-G2
    Text: KMM966G512AQN SGRAM MODULE 4MB SGRAM MODULE 512Kx64 SO DIM M based on 256Kx32 SGRAM Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.0 December 1997 Rev.2.0 (Dec. 1997) BEHMB KMM966G512AQN SGRAM MODULE Revision History Revision 2.0 (December 3,1997)


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    PDF KMM966G512AQN 512Kx64 256Kx32 64-bit 144-pin 256Kx32, 100pin KM4132G271AQ KMM966G512AQN-G0 30H22 KMM966G512AQN-G2

    KMM966G256AQN

    Abstract: No abstract text available
    Text: KMM966G256AQN SGRAM MODULE 2MB SGRAM MODULE 256Kx64 SODIMM based on 256Kx32 SGRAM Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.0 December 1997 Rev.2.0 (Dec. 1997) ELECTRONO KMM966G256AQN SGRAM MODULE Revision History Revision 2.0 (December 3,1997)


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    PDF KMM966G256AQN 256Kx64 256Kx32 64-bit 144-pin 256Kx32, 100pin KM4132G271AQ KMM966G256AQN

    KM4216C258

    Abstract: KM4232W KM4232W259
    Text: MEMORY ICs FUNCTION GUIDE 2. GRAPHIC BUFFER MEMORY PRODUCT GUIDE Part Number Density Orgnization Power Supply Speed ns Features 4Mbit 256K x 16 5V±10% KM4216C255 KM4216C256 KM4216C258 60/70/80 60/70/80 60/70/80 F/F (2WE) F/F (EDO, 2WE) F/F (EDO, 2CAS) 64 SSOP


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    PDF KM4216C255 KM4216C256 KM4216C258 KM4216V255 KM4216V256 KM4216V258 KM4232W259 KM4232W259A KM4132G271 KM4132G271A KM4232W