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    6RA3

    Abstract: No abstract text available
    Text: KM41C16102 CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM41C16102 is a high speed CMOS 16,777,216 bit x 1 Dynam ic Random A ccess Memory. Its de sig n is op tim ized fo r high perform ance ap p lica tio n s


    OCR Scan     		PDF KM41C16102 KM41C16102-7 KM41C16102-8 110ns 130ns 150ns KM41C16102 6RA3

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E LE C TR O N IC S IN C b?E T> 7^ 4 14 2 DD1«bl35 b3S • CMOS DRAM KM41C16102 16M x 1 Bit CMOS Dynamic RAM with Static Coiumn Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C16102 is a high speed CMOS 16,777,216 b it x 1 D ynam ic Random A ccess Memory. Its


    OCR Scan     		PDF KM41C16102 KM41C16102 KM41C16102-6 110ns KM41C16102-7 130ns KM41C16102-8 150ns aC16102

    41C16100

    Abstract: 24-PIN 41C16000
    Text: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS


    OCR Scan     		PDF KM418V256ALLT KM418V256ALLTR KM416C157AJ KM416C157AZ KM416C157AT KM416C157ATR 416C157ALZ KM416C157ALT KM416C157ALTR KM416C157ALLZ 41C16100 24-PIN 41C16000