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    KM48C2100C Search Results

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    KM48C2100C Price and Stock

    Samsung Semiconductor KM48C2100CS-6

    Dynamic RAM, Fast Page, 2M x 8, 28 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM48C2100CS-6 1,727
    • 1 $5.937
    • 10 $5.937
    • 100 $5.937
    • 1000 $2.9685
    • 10000 $2.9685
    Buy Now

    KM48C2100C Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM48C2100CK-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM48C2100CK-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM48C2100CK-L-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM48C2100CK-L-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM48C2100CS-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM48C2100CS-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM48C2100CS-L-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM48C2100CS-L-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF

    KM48C2100C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V2000C

    Abstract: No abstract text available
    Text: KM48C2000C, KM48C2100C KM48V2000C, KM48V2100C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original
    PDF KM48C2000C, KM48C2100C KM48V2000C, KM48V2100C ba00C, 300mil V2000C

    V2000C

    Abstract: No abstract text available
    Text: KM48C2000C, KM48C2100C KM48V2000C, KM48V2100C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original
    PDF KM48C2000C, KM48C2100C KM48V2000C, KM48V2100C ba00C, 300mil V2000C

    KMM372C213CK

    Abstract: KMM372C213CS
    Text: DRAM MODULE KMM372C213CK/CS KMM372C213CK/CS Fast Page Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C213C is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C213C consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II


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    PDF KMM372C213CK/CS KMM372C213CK/CS KMM372C213C 2Mx72bits KMM372C213C 300mil 16bits 48pin 168-pin KMM372C213CK KMM372C213CS

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C213CK/CS KMM364C213CK/CS Fast Page Mode 2M x 64 DRAM DIMM using 2Mx8, 2K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C213C is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C213C consists of eight CMOS 2Mx8bits DRAMs in SOJ/TSOP-II


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    PDF KMM364C213CK/CS KMM364C213CK/CS KMM364C213C 2Mx64bits KMM364C213C 300mil 16bits 48pin 168-pin

    KMM372C213CK

    Abstract: KMM372C213CS
    Text: DRAM MODULE KMM372C213CK/CS ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -1 to +7.0 -1 to +7.0


    Original
    PDF KMM372C213CK/CS 100Max 54Max) 08Min) 200Max 08Max) KMM372C213CK KM48C2100CK KMM372C213CS KM48C2100CS

    Untitled

    Abstract: No abstract text available
    Text: KM48C2000C, KM48C2100C KM48V2000C, KM48V2100C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    OCR Scan
    PDF KM48C2000C, KM48C2100C KM48V2000C, KM48V2100C

    V2000C

    Abstract: No abstract text available
    Text: KM48C2000C, KM48C2100C KM48V2000C, KM48V2100C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memoty cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref ), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-


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    PDF KM48C2000C, KM48C2100C KM48V2000C, KM48V2100C 64ms/32ms 156us V2000C

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


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    PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


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    PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53221OOCKU/CKUG KMM53221 OOCKU/CKUG with Fast Page Mode 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53221OOCKU is a 2Mx32bits RAM high density memory module. The Dynamic • Part Identification Samsung


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    PDF KMM53221OOCKU/CKUG KMM53221 KMM53221OOCKU 2Mx32bits KMM5322100CKU cycles/32ms KMM5322100CKUG 28-pin

    k2624

    Abstract: No abstract text available
    Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#


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    PDF KM41C4000D# C4000D KM41V4000D# KM41V4000W-L KM44C1000D# KM44C10OOD KM44C1003D# KM44C1004D# KM44C1004D KM44C1005D# k2624