KM48S8030C
Abstract: No abstract text available
Text: KM48S8030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM
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KM48S8030C
KM48S8030C
10/AP
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KM48S8030C
Abstract: KM48S803 PC133 1998
Text: KM48S8030C Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Oct., 1998 • PC133 first published. REV. 0 Oct. '98 Preliminary PC133 CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030C is 67,108,864 bits synchronous high data
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KM48S8030C
PC133
KM48S8030C
A10/AP
KM48S803
PC133 1998
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Untitled
Abstract: No abstract text available
Text: KMM374S823CTS PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 24, 1999 - Changed "Detail C" in PCB Dimension. - Changed decoupling capacitance from two 0.1uF to one 0.1uF and one 0.33 uF. Rev.0.1 Mar 1999 KMM374S823CTS PC100 Unbuffered DIMM KMM374S823CTS SDRAM DIMM
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KMM374S823CTS
PC100
KMM374S823CTS
8Mx72
400mil
168-pin
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KMM466S823CT2-F0
Abstract: No abstract text available
Text: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. REV. 2 August 1998 Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM
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KMM466S823CT2
144pin
KMM466S823CT2
8Mx64
400mil
144-pin
KMM466S823CT2-F0
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KMM377S823CT2-GH
Abstract: KMM377S823CT2-GL
Text: Preliminary KMM377S823CT2 SDRAM MODULE KMM377S823CT2 SDRAM DIMM Intel 1.1 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S823CT2 is a 8M bit x 72 Synchronous
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KMM377S823CT2
KMM377S823CT2
8Mx72
400mil
18-bits
24-pin
168pin
0022uF
KMM377S823CT2-GH
KMM377S823CT2-GL
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KMM374S1623CT-GH
Abstract: No abstract text available
Text: KMM374S1623CT PC100 Unbuffered DIMM Revision History [ Rev. 1 ] March 23. 1999 Functional Block Diagram and Package dimension changed. Rev.1 Mar. 1999 KMM374S1623CT PC100 Unbuffered DIMM KMM374S1623CT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM374S1623CT
PC100
KMM374S1623CT
16Mx72
400mil
168-pin
KMM374S1623CT-GH
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KMM377S823CT3-GH
Abstract: KMM377S823CT3-GL
Text: SDRAM MODULE KMM377S823CT3 KMM377S823CT3 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S823CT3 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM377S823CT3
KMM377S823CT3
8Mx72
400mil
18-bits
24-pin
168pin
0022uF
KMM377S823CT3-GH
KMM377S823CT3-GL
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Untitled
Abstract: No abstract text available
Text: KMM377S823CT3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 PC100 Registered DIMM KMM377S823CT3 KMM377S823CT3 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD
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KMM377S823CT3
PC100
KMM377S823CT3
8Mx72
400mil
18-bits
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KMM374S1623CT-GL
Abstract: No abstract text available
Text: KMM374S1623CT PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 23, 1999 - Changed "Detail C" in PCB Dimension. Rev.0.1 Mar. 1999 KMM374S1623CT PC100 Unbuffered DIMM KMM374S1623CT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM374S1623CT
PC100
KMM374S1623CT
16Mx72
400mil
168-pin
KMM374S1623CT-GL
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connector SAMSUNG tab 2 30 PIN
Abstract: KM48S8030CT-GL 30 pin connector samsung tab connector SAMSUNG TAB 30 PIN A12181 KMM379S823CT-GL
Text: Only for SGI SDRAM MODULE KMM379S823CT KMM379S823CT, Burst Mode 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM379S823CT is a 8M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM379S823CT
KMM379S823CT,
8Mx72
KMM379S823CT
KMM379S823CT-GL
400mil
100MHz
52-pin
100Min
connector SAMSUNG tab 2 30 PIN
KM48S8030CT-GL
30 pin connector samsung tab
connector SAMSUNG TAB 30 PIN
A12181
KMM379S823CT-GL
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KMM366S823CTS-GL
Abstract: No abstract text available
Text: KMM366S823CTS PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 24, 1999 - Changed "Detail C" in PCB Dimension. - Changed decoupling capacitance from two 0.1uF to one 0.1uF and one 0.33 uF. Rev.0.1 Mar 1999 KMM366S823CTS PC100 Unbuffered DIMM KMM366S823CTS SDRAM DIMM
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KMM366S823CTS
PC100
KMM366S823CTS
8Mx64
400mil
168-pin
KMM366S823CTS-GL
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PDF
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KMM374S823CTF-G0
Abstract: No abstract text available
Text: PC66 SDRAM MODULE KMM374S823CTF KMM374S823CTF SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823CTF is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM374S823CTF
KMM374S823CTF
8Mx72
400mil
168-pin
KM48S8030CT
KMM374S823CTF-G0
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KMM466S823CT3-F0
Abstract: No abstract text available
Text: KMM466S823CT3 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. REV. 2 August 1998 Preliminary 144pin SDRAM SODIMM KMM466S823CT3 KMM466S823CT3 SDRAM SODIMM
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KMM466S823CT3
144pin
KMM466S823CT3
8Mx64
400mil
144-pin
KMM466S823CT3-F0
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KMM366S823CTF-G0
Abstract: KMM366S823CTF
Text: PC66 SDRAM MODULE KMM366S823CTF KMM366S823CTF SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823CTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S823CTF
KMM366S823CTF
8Mx64
400mil
168-pin
KM48S8030CT
KMM366S823CTF-G0
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nk401
Abstract: AM29V800 S3C3410 S3C3410X JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SMDK40100 SVC32
Text: 40-S3-C3410X-062001 APPLICATION NOTE S3C3410X 16-Bit CMOS Microcontrollers Revision 0 S3C3410X RISC MICROPROCESSOR 1 ABOUT SMDK40100 BOARD ABOUT SMDK40100 BOARD SYSTEM OVERVIEW SMDK40100 Samsung MCU Development Kit for S3C3410X is a platform that is suitable for code development
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40-S3-C3410X-062001
S3C3410X
16-Bit
S3C3410X
SMDK40100
SMDK40100
16/32-bit
nk401
AM29V800
S3C3410
JEENI
ARM7 pin discription and programming
ka78r33
set date pSOS pROBE
SVC32
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Untitled
Abstract: No abstract text available
Text: Preliminary SDRAM R evision H istory R evision 1 M ay 1998 - ICC2 N va lu e (10m A) is cha ng ed to 12m A. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 ELECTRONICS Preliminary
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KM48S8030C_
KM48S8030C
KM48S8030C
10/AP
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol
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OCR Scan
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KM48S8030C
KM48S8030C
10/AP
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM
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OCR Scan
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KMM466S823CT3_
144pin
KMM466S823CT3
8Mx64
400mil
144-and
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM
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OCR Scan
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KMM466S823CT2
144pin
KMM466S823CT2
8Mx64
400mil
144-pin
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PDF
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M374S823CT
Abstract: No abstract text available
Text: PC100 SDRAM MODULE KM M374S823CTS KMM374S823CTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823CTS is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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M374S823CTS
KMM374S823CTS
PC100
8Mx72
400mil
168-pin
M374S823CT
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTRCMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM
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KMM466S823CT2
144pin
KMM466S823CT2
400mil
144-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTRCMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM
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OCR Scan
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KMM466S823CT3_
144pin
KMM466S823CT3
400mil
144-pin
KMM466S823CT3
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km48s2020ct
Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
KM44S16020BT
KM48S8020BT
KM416S4020BT
KM416S4021BT
KM44S160308T
KM48S8030BT
S823B
4MX16
54-PIN
u108h
KM48S2020
44s16030
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Untitled
Abstract: No abstract text available
Text: PC100 SDRAM MODULE KM M374S823CTS KMM374S823CTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823CTS is a 8M bit x 72 Synchronous • Performance range
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PC100
M374S823CTS
KMM374S823CTS
8Mx72
M374S823CTS
KMM374S823CTS-G8
125MHz
400mil
KMM374S823CTS-GI-
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