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    KM48V8104 Price and Stock

    Samsung Semiconductor KM48V8104CS-5

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    Bristol Electronics KM48V8104CS-5 6 1
    • 1 $19.2
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    Quest Components KM48V8104CS-5 4
    • 1 $20.8
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    • 100 $20.8
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    Samsung Semiconductor KM48V8104CS-L6

    8M X 8 EDO DRAM, 60 ns, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM48V8104CS-L6 10
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    KM48V8104 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM48V8104B Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BK-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BK-5 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BK-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BK-L-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BKL-45 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 45ns Original PDF
    KM48V8104BK-L-5 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BKL-5 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 50ns Original PDF
    KM48V8104BK-L-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BKL-6 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 60ns Original PDF
    KM48V8104BS-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BS-5 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BS-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BS-L-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BSL-45 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 45ns Original PDF
    KM48V8104BS-L-5 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BSL-5 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 50ns Original PDF
    KM48V8104BS-L-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BSL-6 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 60ns Original PDF
    KM48V8104C Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM48V8104 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM48V8004B

    Abstract: KM48V8104B
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM48V8004B, KM48V8104B 400mil KM48V8004B KM48V8104B PDF

    KM48V8004C

    Abstract: KM48V8104C
    Text: KM48V8004C,KM48V8104C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM48V8004C KM48V8104C 400mil KM48V8104C PDF

    KM48V8004B

    Abstract: KM48V8104B
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM48V8004B, KM48V8104B 400mil KM48V8004B KM48V8104B PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM372F80 8 3BK/BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6


    Original     		KMM372F80 100Max 54Max) 200Max 08Max) KMM372F803BK/BS KM48V8104BK, KM48V8104BS. KMM372F883BK/BS KM48V8004BK, PDF

    km48v8104ck

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F80 8 3CK3/CS3 KMM374F80(8)3CK3/CS3 EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F80(8)3CK3/CS3 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung


    Original     		KMM374F80 8Mx72bits 400mil 168pin 200Max 08Max) km48v8104ck PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F80 8 3BK/BS Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM374F80(8)3BK/BS Revision History Version 0.0 (Dec, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		KMM374F80 8Mx72 8Mx72bits PDF

    KMM372F803CK

    Abstract: KMM372f803c
    Text: KMM372F80 8 3CK/CS DRAM MODULE KMM372F80(8)3CK/CS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3C consists of nine CMOS 8Mx8bits DRAMs


    Original     		KMM372F80 8Mx72bits 400mil 168-pin KMM372F803CK KMM372F803CS KMM372f803c PDF

    Untitled

    Abstract: No abstract text available
    Text: UG48W644 8 8HSG Revision History Mar 04 , 1999 Rev - B Oct 30 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: (510) 668-2088 Fax: (510) 661-2788


    Original     		UG48W644 144Pin 144-pin PDF

    k2917

    Abstract: No abstract text available
    Text: KM48V8004C,KM48V8104C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    OCR Scan     		KM48V8004C KM48V8104C k2917 PDF

    KM48V8104A

    Abstract: No abstract text available
    Text: KM48V8004A, KM48V8104A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,


    OCR Scan     		KM48V8004A, KM48V8104A PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED CMOS DRAM KM48V8104 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C tH P C KM48V8104-5 50ns 13ns 90ns 20ns KM48V8104-6 60ns 15ns 110ns 24ns KM48V8104-7 70ns 20ns 130ns 29ns


    OCR Scan     		KM48V8104 KM48V8104 KM48V8104-5 KM48V8104-6 KM48V8104-7 110ns 130ns cycles/64ms PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM48V8004C,KM48V8104C 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 8,3 88,60 8 x 8 bit Extended D ata O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access o f m em ory cells w ith in the sam e row. Refresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5 o r -6), po w e r co n su m p tio n (N o rm a l


    OCR Scan     		KM48V8004C KM48V8104C 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: KM48V8004A, KM48V8104A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 8,388,608 x 8 bit Extended Data O ut M ode CM OS DRAM s. Extended D ata Out M ode offers high speed random access of m em ory cells within the same row. Refresh cycle 4K Ref. o r 8K Ref. ,


    OCR Scan     		KM48V8004A, KM48V8104A PDF

    31DQ6

    Abstract: No abstract text available
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    OCR Scan     		KM48V8004B, KM48V8104B 31DQ6 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM48V8004A, KM48V8104A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 8 ,3 8 8 .6 0 8 x 8 bit E x te n d e d D a ta O u t M o d e C M O S D R A M s . E x te n d e d D a ta O u t M o d e o ffe rs high s p e e d ra n d o m a c c e s s o f m e m o ry c e lls w ith in th e sa m e row . R e fre s h c y c le 4 K R e f. o r 8 K R ef. ,


    OCR Scan     		KM48V8004A, KM48V8104A PDF

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16 PDF

    KM48V8004AK

    Abstract: No abstract text available
    Text: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F88 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		KMM366F883AK KMM366F803AK 8Mx64 KMM366F88 400mil 168-pin KMM366F883AK KMM366F803AK KM48V8004AK PDF

    trw 810

    Abstract: No abstract text available
    Text: DRAM M ODULE KMM374F80 8 3BK1 Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F80(8)3BK1 Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Rem oved tw o A C param eters t CACP(access tim e from CAS) and tAAP(access tim e from col. addr.) in AC C H A R A C T E R IS T IC S .


    OCR Scan     		KMM374F80 8Mx72 374F80 8Mx72bits 400mil 08Max) trw 810 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM 372F80 8 3BK/BS DRAM MODULE Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 KMM 372F80(8)3BK/BS DRAM MODULE Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t c acp (access time from CAS) and tAAP (access time from col. addr.) in A C C H A R A C T E R IS T IC S .


    OCR Scan     		372F80 8Mx72 KMM372F80 8Mx72bits 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: STI648104G1-70VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648104G1-70VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple Technology STI648104G1-70VG consist of eight CMOS 8M x


    OCR Scan     		STI648104G1-70VG 144-PIN 124ns cycles/64ms STI648104G1-70VG 32-pin 400-mil PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM372F803AK/AS KMM372F883AK/AS DRAM MODULE KMM372F803AK/AS & KMM372F883AK/AS Fast Page with EDO Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F80 8 3A is a 8M bit x 72 Dynamic RAM high density memory module. The


    OCR Scan     		KMM372F803AK/AS KMM372F883AK/AS KMM372F883AK/AS 8Mx72 KMM372F80 400mil KMM372F803AK KMM372F803AS PDF

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F803BS2-L Revision History Version 0.0 Sept, 1997 Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS. DRAM MODULE KMM466F803BS2-L KMM466F803BS2-L EDO Mode 8M x 64 DRAM SOD IMM Using 8MX8, 4K Refresh 3.3 V, Low power/Self-Refresh


    OCR Scan     		KMM466F803BS2-L KMM466F803BS2-L 8Mx64bits cycles/128ms, 150Max PDF

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


    OCR Scan     		KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32 PDF