Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM616513 CMOS SRAM 32,768 WORD x 16 BIT High-Speed CMOS Static HAM FEATURES GENERAL DESCRIPTION • F:ast Access Time 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max.) Operating KM616513J-17: 180mA (max.)
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KM616513
KM616513J-17:
180mA
KM616513J-20:
160mA
KM616513J-25:
140mA
KM616513J:
40-Pin
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L0533
Abstract: KM616513 KM616513J-20 KM616513J20
Text: KM616513 CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1mA(max.) Operating KM6165135-15: 210mA KM616513J-17: 200mA KM616513J-20: 190mA KM616513J-25: 180mA
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KM616513
KM6165135-15:
210mA
KM616513J-17:
200mA
KM616513J-20:
190mA
KM616513J-25:
180mA
KM616513J:
L0533
KM616513
KM616513J-20
KM616513J20
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7Tb414e KM616513 DG17bE4 251 H S r i G K CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1 mA(max.)
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7Tb414e
KM616513
DG17bE4
KM616513
288-bit
400mil)
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM616513 32,768 WORD x 16 BIT High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 5 ,1 7 ,2 0 ,25ns max. • Low Power Dissipation Standby (TTL) : 50 mA (max.) (CMOS): 1mA (max.) Operating KM616513-15 :210mA (max.) KM616513-17 : 200mA (max.)
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KM616513
KM616513-15
210mA
KM616513-17
200mA
KM616513-20
190mA
KM616513-25
180mA
KM616513J
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Untitled
Abstract: No abstract text available
Text: KM616513 CMOS SRAM 32,768 WORD x 16 BIT High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 5 ,1 7 ,2 0 ,25ns max. • Low Power Dissipation Standby (TTL) : 50mA (max.) (C M O S ): 1mA (max.) Operating KM616513-15 :210m A (max.)
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OCR Scan
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PDF
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KM616513
KM616513-15
M616513-17
200mA
KM616513-20
KM616513-25
KM616513
288-bit
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