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    KM641003 Price and Stock

    Samsung Semiconductor KM641003BJ-8

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    Bristol Electronics KM641003BJ-8 15
    • 1 -
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    Quest Components KM641003BJ-8 874
    • 1 $1.17
    • 10 $1.17
    • 100 $0.546
    • 1000 $0.4875
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    KM641003BJ-8 511
    • 1 $1.575
    • 10 $1.575
    • 100 $0.4725
    • 1000 $0.4095
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    Samsung Semiconductor KM641003CJ-12

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    Bristol Electronics KM641003CJ-12 2
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    Samsung Semiconductor KM641003J-15

    Static RAM, 256Kx4, 32 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM641003J-15 220
    • 1 $13.5
    • 10 $13.5
    • 100 $5.4
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    KM641003J-15 1
    • 1 $9.45
    • 10 $9.45
    • 100 $9.45
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    Samsung Semiconductor KM641003BJ-10

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    Quest Components KM641003BJ-10 34
    • 1 $21.14
    • 10 $21.14
    • 100 $19.026
    • 1000 $19.026
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    KM641003 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM641003A Samsung Electronics 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range Original PDF
    KM641003A-12 Samsung Electronics 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range Original PDF
    KM641003A-15 Samsung Electronics 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range Original PDF
    KM641003A-20 Samsung Electronics 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range Original PDF
    KM641003AJ-12 Samsung Electronics 256K x 4 Bit (with Inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641003AJ-15 Samsung Electronics 256K x 4 Bit (with Inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641003AJ-20 Samsung Electronics 256K x 4 Bit (with Inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641003B Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out Original PDF
    KM641003B-10 Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out Original PDF
    KM641003B-12 Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out Original PDF
    KM641003B-8 Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out Original PDF
    KM641003BJ-10 Samsung Electronics 256K x 4 Bit (with inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641003BJ-12 Samsung Electronics 256K x 4 Bit (with inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641003BJ-8 Samsung Electronics 256K x 4 Bit (with inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641003C Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating) Original PDF
    KM641003C-12 Samsung Electronics 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM Original PDF
    KM641003C-15 Samsung Electronics 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM Original PDF
    KM641003C-20 Samsung Electronics 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM Original PDF
    KM641003CJ-10 Samsung Electronics 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM Original PDF
    KM641003CJ-12 Samsung Electronics 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM Original PDF

    KM641003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM641003B

    Abstract: KM641003B-10 KM641003B-12 KM641003B-8
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target


    Original     		PDF KM641003B 256Kx4 32-SOJ-400 KM641003B KM641003B-10 KM641003B-12 KM641003B-8

    KM641003C-12

    Abstract: KM641003C-15 KM641003C-20 KM641003C
    Text: PRELIMINARY PRELIMINARY KM641003C/CL, KM641003CI/CLI CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM641003C/CL, KM641003CI/CLI 256Kx4 32-SOJ-400 KM641003C-12 KM641003C-15 KM641003C-20 KM641003C

    KM641003C

    Abstract: KM641003C-12 KM641003C-15 KM641003C-20
    Text: PRELIMINARY PRELIMINARY CMOS SRAM KM641003C Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial Draft Aug. 5. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		PDF KM641003C 256Kx4 32-SOJ-400 KM641003C KM641003C-12 KM641003C-15 KM641003C-20

    KM641003B-12

    Abstract: KM641003B-8 KM641003B KM641003B-10
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997


    Original     		PDF KM641003B 256Kx4 32-SOJ-400 KM641003B-12 KM641003B-8 KM641003B KM641003B-10

    KM641003A

    Abstract: KM641003A-12 KM641003A-15 KM641003A-20
    Text: PRELIMINARY KM641003A CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM641003A 256Kx4 12/15/17/20ns 200/190/180/170mA 150/145/145/140mA 32-SOJ-400 KM641003A KM641003A-12 KM641003A-15 KM641003A-20

    KM641003C

    Abstract: KM641003C-12 KM641003C-15 KM641003C-20
    Text: PRELIMINARY PRELIMINARY KM641003C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5. 1998 Preliminary


    Original     		PDF KM641003C 256Kx4 32-SOJ-400 KM641003C KM641003C-12 KM641003C-15 KM641003C-20

    Untitled

    Abstract: No abstract text available
    Text: KM641003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		PDF KM641003B 256Kx4 8/10/12nsafter 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		PDF KM641003B 256Kx4 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM641003 CMOS SRAM 256K x 4 Bit With OB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 5,1 7,20 ns(M ax.) • Low Pow er Dissipation Standby (TTL) : 4 0 m A(m ax.) (C M O S ): 10 m A(m ax.) Operating K M 6 4 1 0 0 3 -1 5 : 170 m A(m ax.)


    OCR Scan     		PDF KM641003 32-SOJ-4QO 576-bit

    KM641003J

    Abstract: No abstract text available
    Text: PRELIMINARY KM641003 CMOS SRAM 262,144 WORD x 4 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM641003J-15: 170mA (Max.)


    OCR Scan     		PDF KM641003 KM641003J-15: 170mA KM641003J-17: 160mA KM641003J-20: 150mA KM641003J: 32-Pin KM641003 KM641003J

    KM641003J-15

    Abstract: KM641003J-20
    Text: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10 mA(max.) Operating KM641003J-15 : 170 mA(max.) KM 641003J-17: 160 mA(max.)


    OCR Scan     		PDF KM641003 KM641003J-15 KM641003J-17 KM641003J-20: KM641003J 32-SOJ-4CK) KM641003 576-bit KM641003J-15 KM641003J-20

    bm42

    Abstract: No abstract text available
    Text: CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : K M 64 100 3-1 5: 1 70mA (Max.)


    OCR Scan     		PDF KM641003 KM641003-15 170mA KM641003-17 160mA KM641003-20 150mA KM641003J 32-SOJ-4CK) KM641003 bm42

    KM641003A

    Abstract: KM641003A-12 KM641003A-15 KM641003A-20
    Text: PRELIMINARY CMOS SRAM KM641003A 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5 ,1 7 ,2 0 ns(Max.) • Low Pow er Dissipation Standby (TT L) : 3 0 m A(M ax.) Th e K M 641003A is a 1,048,576-bit high-speed Static


    OCR Scan     		PDF KM641003A KM641003A-12 KM641003A-15 KM641003A-17: KM641003A-20: KM641003AJ 32-SOJ-400 KM641003A 576-bit KM641003A-12 KM641003A-15 KM641003A-20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641003C CMOS SRAM D ocument iiiis m , jg. X S a S j c 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998 Remark Prelim inary The attached d ata sheets are prepared and approved by SAM SU N G Electronics. S AM SU NG Electronics CO., LTD. reserve th e right to change the


    OCR Scan     		PDF KM641003C 256Kx4 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: P rç ff^ 'in c -y KM641003B/BL, KM641003BI/BLI CMOS SRAM 256K x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •■Fast Access Time 8,10,12* • (Max.) Low Power Dissipation Standby (TTL) : 30»• (Max.) The KM641003B/BL is a 1,048,576-bit high-speed Static Ran­


    OCR Scan     		PDF KM641003B/BL, KM641003BI/BLI KM641003B/BL KM641003B/BLJ 32-SQJ-400 KM641003B/BLT: 32-TSQP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM641003A CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Apr. 22th, 1995


    OCR Scan     		PDF KM641003A 256Kx4 12/15/17/20ns 200/190/180/170m 150/145/145/140m 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM641003 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003 uses four common input and output lines and has an output enable pin which operates


    OCR Scan     		PDF KM641003 KM641003 576-bit 32-pin

    Untitled

    Abstract: No abstract text available
    Text: KM641003A, KM641003AI CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		PDF KM641003A, KM641003AI 256Kx4 12/15/17/20ns 200/190/180/170mA 150/145/145/140mA 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM641003B CMOS SRAM 256K x 4 Bit with (SEjHigh-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,t2ns(Max. • tow Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM641003B - 8 : 150mA(Max.) KM641003B - 1 0 :145mA(Max.)


    OCR Scan     		PDF KM641003B KM641003B 150mA 145mA 140mA KM641003BJ 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM641003A CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION N.C E A oU Al H c The KM641003A is a 1,048,576-bit high-speed Static Ftandom Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641003A KM641003A 576-bit 32-pin

    Untitled

    Abstract: No abstract text available
    Text: KM641003 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10mA(max.) Operating KM641003-15: 170mA(max.) KM641003-17:1 6 0 mA(max.)


    OCR Scan     		PDF KM641003 KM641003-15: 170mA KM641003-17 KM641003-20 KM641003J 32-SOJ-4QO KM641003 576-bit

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM641003B/BL, KM641003BI/BLI Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark


    OCR Scan     		PDF KM641003B/BL, KM641003BI/BLI 256Kx4 32-SO J-400 32-TSO P2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM641003A CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A cce ss T im e 1 2 ,1 5 ,1 7 ,2 0 n s(M ax.) • Low P o w e r D issip a tio n S ta n d b y (T T L ) : 3 0 m A (M a x.) (C M O S ): 10 m A (M a x.)


    OCR Scan     		PDF KM641003A

    KM641003A

    Abstract: KM641003A-12 KM641003A-15
    Text: CMOS SRAM KM641003A 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM641003A-12 : 200 mA(Max.) KM641003A-15 : 190 mA(Max.)


    OCR Scan     		PDF KM641003A KM641003A-12 KM641003A-15 KM641003A-17 KM64t003A-20: KM641003AJ 32-SOJ-400 KM641003AT 32-TSOP2-4QOF KM641003A KM641003A-12 KM641003A-15