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    KM6465BP Search Results

    KM6465BP Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6465BP-12 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF
    KM6465BP-15 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF
    KM6465BP-20 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF
    KM6465BP-25 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF

    KM6465BP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6465B/BL 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) 100^1A (max.) L-Version • Operating KM6465BP/J-12: 140mA (max.)


    OCR Scan     		PDF KM6465B/BL KM6465BP/J-12: 140mA KM6465BP/J-15: 130mA KM6465BP/J-20: 120mA KM6465BP/J-25: 110mA 22-pin

    KM6465BP

    Abstract: No abstract text available
    Text: KM6465B/BL CMOS SRAM 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) 100^A (max.) L-Version • Operating KM6465BP/J-12: 140mA (max.)


    OCR Scan     		PDF KM6465B/BL KM6465BP/J-12: 140mA KM6465BP/J-15: 130mA KM6465BP/J-20: 120mA KM6465BP/J-25: 110mA 22-pin KM6465BP

    Untitled

    Abstract: No abstract text available
    Text: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM FEATURES • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6465B-12 :140mA (max.) KM6465B-15 :130mA (max.) KM6465B-20 :120mA (max.)


    OCR Scan     		PDF KM6465B KM6465B-12 140mA KM6465B-15 130mA KM6465B-20 120mA KM6465B-2S 110mA KM6465BP:

    6465B

    Abstract: No abstract text available
    Text: KM 6465B CM O S SRAM 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6465B-12 : 140mA (max.) KM6465B-15 : 130mA (max.)


    OCR Scan     		PDF 6465B KM6465B-12 140mA KM6465B-15 130mA KM6465B-20 120mA KM6465B-25 110mA KM6465BP: 6465B

    batery

    Abstract: KM6465B-12 KM6465B-15 KM6465B-20 KM6465B-25
    Text: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast A ccess Tim e: 12, 15, 20, 25ns max. • Lo w P ow er D issipatio n S tandby (TTL) : 35m A (max.) (CMOS): 1m A (max.) ' • Operating KM6465B-12 :140m A (max.)


    OCR Scan     		PDF KM6465B/BL KM6465B-12 140mA KM6465B-15 130mA KM6465B-20 120mA KM6465B-25 110mA KM6465BP batery KM6465B-12 KM6465B-15 KM6465B-20 KM6465B-25

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6465B 16Kx4Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12, 15, 2 0 ,2 5 ns Max. T h e K M 6 4 6 5 B is a 6 5 ,5 3 6 -b it • Low Pow er Dissipation Random Access Memory organized as 16,3 84 words by Standby (TTL) h igh-speed S tatic


    OCR Scan     		PDF KM6465B 16Kx4Bit 6465B

    km6465

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7E D • 7^4142 0 Ù I 7 5 4 2 3^b « S f lG K KM6465B/BL CMOS SRAM 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.)


    OCR Scan     		PDF KM6465B/BL 100fiA KM6465BP/J-12: 140mA KM6465BP/J-15: 130mA KM6465BP/J-20: 120mA KM6465BP/J-25: 110mA km6465