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    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CM O S): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)


    OCR Scan     		KM64B1003 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA KM64B1003J: PDF

    pin diagram of 7414

    Abstract: KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 pin 7 diagram of 7414
    Text: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)


    OCR Scan     		KM64B1003 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA KM64B1003J pin diagram of 7414 KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 pin 7 diagram of 7414 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64B1003 BiCMOS SRAM 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10 ,12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)


    OCR Scan     		KM64B1003 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA KM64B1003J PDF

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)


    OCR Scan     		KM64B1003 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA 1003J: PDF

    P2SC

    Abstract: No abstract text available
    Text: KM64B1003 BiCMOS SRAM 256K x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating KM64B1003 - 8 : 165fflA(Max.) KM64B1003 - 1 0 : 15SmA(Max.)


    OCR Scan     		KM64B1003 KM64B1003 165fflA 15SmA 145mA KM6481003J 32-SQJ-400 P2SC PDF

    KM64B1003J-10

    Abstract: KM64B1003J-12 KM64B1003J-15
    Text: SAMSUNG ELECTRONICS INC b7E D • VTbHme □□17tti2 DbS SMGK KM64B1003_ BiCMOS SRAM 262,144 WORD X 4 Bit With ÖE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.)


    OCR Scan     		KM64B1003 DD17bh2 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D 7^142 KM64B1003 □□17bb2 DhS «SrißK BiCMOS SRAM 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation


    OCR Scan     		KM64B1003 17bb2 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA PDF