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    Abstract: No abstract text available
    Text: PRELIMINARY KM64B1002 BiCMOS SRAM 262,144 WORD x 4 Bit FEATURES GENERAL DESCRIPTION • Fast Access Tims: 10, 12ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) (CMOS): 10m A (max.) Operating KM64B1002J10: 150mA (max.) KM64B1002J12: 140mA (max.)


    OCR Scan     		PDF KM64B1002 KM64B1002J10: 150mA KM64B1002J12: 140mA KM64B1002J: 28-pin 576-bit

    KM68B1002-10

    Abstract: No abstract text available
    Text: ö fS A M SU N G ELECTRONICS KM 64B1002 262,144 WORD X 4 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1002 is a 1,048,576-bit high­ speed static random access memory or­ ganized as 262,144 words by 4 bit. • Fast Access Time 10,12ns max. • Low Power Dissipation


    OCR Scan     		PDF 64B1002 KM64B1002 576-bit KM64B1002J-10 160mA KM64B1002J-12 150mA KM64B1002J 28-Pin KM68B1002-10