KM64B4002J Search Results

KM64B4002J Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM64B4002J-10		Samsung Electronics	1M x 4-Bit High Speed BiCMOS Static RAM		Scan	PDF
KM64B4002J-12		Samsung Electronics	1M x 4-Bit High Speed BiCMOS Static RAM		Scan	PDF
KM64B4002J-15		Samsung Electronics	1M x 4-Bit High Speed BiCMOS Static RAM		Scan	PDF

KM64B4002J Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY BiCMOS SRAM KM64B4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM64B4002J-10 : 190mA(Max.) KM64B4002J-12 : 185mA(Max.)	OCR Scan	KM64B4002 KM64B4002J-10 190mA KM64B4002J-12 185mA KM64B4002J-15 180mA KM64B4002J 32-SOJ-400 KM64B4002	PDF
km64b4002j-15 Abstract: No abstract text available Text: PRELIMINARY BiCMOS SRAM KM64B4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM84B4002J-10 : 190mA(Max.) KM64B4002J-12 : 185mA(Max.)	OCR Scan	KM64B4002 KM84B4002J-10 190mA KM64B4002J-12 185mA KM64B4002J-15 180mA KM64B4002J 32-SQJ-400 KM64B4002 km64b4002j-15	PDF
KM64B4002J-10 Abstract: KM64B4002J-12 KM64B4002J-15 Text: PRELIMINARY BiCMOS SRAM KM64B4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby fTTL : 60mA CMOS) : 30mA Operating KM64B4002J-10 : 190mA(Max.) KM64B4002J-12 :185mA(Max.)	OCR Scan	KM64B4002 KM64B4002J-10 190mA KM64B4002J-12 185mA KM64B4002J-15 180mA KM64B4002J 32-S0J-40Q KM64B4002 KM64B4002J-10 KM64B4002J-12 KM64B4002J-15	PDF
Untitled Abstract: No abstract text available Text: BiCMOS SRAM KM64B4002 1M x 4 Bit With ÜE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64B4002-12 : 185 mA(Max.) KM64B4002-13:1 8 5 mA(Max.)	OCR Scan	KM64B4002 KM64B4002-12 KM64B4002-13 KM64B4002-15: KM64B4002J: 32-SOJ-400 KM64B4002 304-bit	PDF
Untitled Abstract: No abstract text available Text: KM64B4002 BiCMOS SRAM 1M x 4 Bit With UE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) O perating KM 64B4002-12 : 185 mA(Max.) KM 64B4002-13 : 185 mA(M ax )	OCR Scan	KM64B4002 64B4002-12 64B4002-13 KM64B4002-15 KM64B4002J: 32-SOJ-4QO KM64B4002 304-bit 64B4002	PDF
32-SOJ-4QO Abstract: No abstract text available Text: BiCMOS SRAM KM64B4002 1M x 4 Bit With UE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64B4002-12 : 185 mA(Max.) K M 64B 4002-13: 185 mA(Max.)	OCR Scan	KM64B4002 KM64B4002-12 KM64B4002-13: KM64B4002-15 KM64B4002J: 32-SOJ-4QO KM64B4002 304-bit 32-SOJ-4QO	PDF
Untitled Abstract: No abstract text available Text: KM64B4002 BiCMOS SRAM 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mAMax.) Operating KM64B4002 - 1 2 :185mA{Max.) KM64B40Q2 -1 3 : 185mA(Max.)	OCR Scan	KM64B4002 30mAMax. KM64B4002 185mA KM64B40Q2 180mA KM64B4002J 32-SOJ-4QO	PDF
Untitled Abstract: No abstract text available Text: KM64B4002 BiCMOS SRAM Document Title 1Mx4 Bit with OE High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target	OCR Scan	KM64B4002	PDF