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    Untitled

    Abstract: No abstract text available
    Text: KMM366S803BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.


    Original     		PDF KMM366S803BTL 200mV. 66MHz

    Untitled

    Abstract: No abstract text available
    Text: KMM366S803BTL PC66 SDRAM MODULE KMM366S803BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S803BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S803BTL KMM366S803BTL 8Mx64 400mil 168-pin

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT