SEKI
Abstract: Qualcomm, PM qualcomm pm larry BA0122
Text: Peterson, Sandra Subject: Shimura Teruyuki [Shimura.Teruyuki@dy.MitsubishiElectric.co.jp] Tuesday, September 26, 2006 8:06 PM Sawh, Larry Peterson, Sandra; Dura Mr. J.K. Mckinney; Takemoto, Akira; MEUS Mr. Steve Beritzhoff; Chen, Daniel; King MEUS ; "?MS(?\\)"; ?; Seki, Hiroaki; Kosei.Maemura
|
Original
|
G475585
G475584
BA01223L
SEKI
Qualcomm, PM
qualcomm pm
larry
BA0122
|
PDF
|
transformer ee10
Abstract: TFS759 smd optocoupler marking 530 5612a eSIP-16 TFS760 PC817XI1 TFS763 PC817X1J00F TFS758HG
Text: TFS757-764HG HiperTFS Family Combined Two-Switch Forward and Flyback Power Supply Controllers with Integrated High Voltage MOSFETs Key Benefits • Single chip solution for two-switch forward main and flyback standby • High integration allows smaller form factor and higher power
|
Original
|
TFS757-764HG
transformer ee10
TFS759
smd optocoupler marking 530
5612a
eSIP-16
TFS760
PC817XI1
TFS763
PC817X1J00F
TFS758HG
|
PDF
|
SCHEMATIC simple dimmer
Abstract: No abstract text available
Text: LYT4211-4218/4311-4318 LYTSwitch-4 High Power LED Driver IC Family Single-Stage Accurate Primary-Side Constant Current CC Controller with PFC for Low-Line Applications, TRIAC Dimming and Non-Dimming Options Optimized for Different Applications and Power Levels
|
Original
|
LYT4211-4218/4311-4318
LYT4211-LYT4218
LYT4311-LYT4318
LYT4x11E/L
LYT4x12E/L
LYT4x13E/L
LYT4x15E/L
LYT4x16E/L
LYT4x17E/L
LYT4x18E/L
SCHEMATIC simple dimmer
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LNK584-586 LinkZero-AX Zero Standby Consumption Integrated Off-Line Switcher Product Highlights Lowest System Cost with Zero Standby Consumption • Simple system configuration provides zero consumption standby/Power-Down with user controlled wake up • Very tight IC parameter tolerances improves system manufacturing yield
|
Original
|
LNK584-586
|
PDF
|
lxa04t600
Abstract: DIODE 200A 600V schottky AN-300 SCHOTTKY 4A 600V TOPSWITCH 242 lxa04
Text: LXA04T600, LXA04B600 QSpeed Family 600 V, 4 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 A V nC A General Description This device has the lowest QRR of any 600V
|
Original
|
LXA04T600,
LXA04B600
O-220AC
O-263AB
LXA04T600
lxa04t600
DIODE 200A 600V schottky
AN-300
SCHOTTKY 4A 600V
TOPSWITCH 242
lxa04
|
PDF
|
AN-300
Abstract: VR400
Text: QH08TZ600 Qspeed Family 600 V, 8 A H-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 8 600 25.5 1.9 0.75 General Description A V nC A This device has the lowest QRR of any 600V Silicon diode.
|
Original
|
QH08TZ600
AN-300
VR400
|
PDF
|
AN-300
Abstract: 120Qrr D-80336 lxa08t600
Text: LXA08T600, LXA08B600, LXA08FP600 Qspeed Family 600 V, 8 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 8 600 82 3.5 0.55 General Description A V nC A This device has the lowest QRR of any 600V
|
Original
|
LXA08T600,
LXA08B600,
LXA08FP600
O-220AC
O-263AB
LXA08T600
LXA08B600
2500VRMS
Ben1252-730-141
AN-300
120Qrr
D-80336
lxa08t600
|
PDF
|
VR200
Abstract: No abstract text available
Text: LQA30A300C Qspeed Family 300 V, 30 A Q-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 15 300 47 2.7 0.7 General Description A V nC A This device has the lowest QRR of any 300V
|
Original
|
LQA30A300C
O-247
Bangalore-560052
VR200
|
PDF
|
erni relais
Abstract: UdSSR electronica ddr elektronik DDR thyristor aeg electronica reihe relais erni siemens klein 1992 siemens relais V23162 AP2003
Text: 56 57 58 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 83 84 85 86 87 88 92 93 94 95 96 97 98 99 00 01 02 03 04 05 06 fünfzig Jahre 82 ERNI Adelberg 59 89 60 90 61 91 Eine Erfolgsgeschichte Liebe Freunde, Kunden und Geschäftspartner, liebe Mitarbeiterinnen und Mitarbeiter,
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LNK302/304-306 LinkSwitch-TN Family Lowest Component Count, Energy-Efficient Off-Line Switcher IC Product Highlights Cost Effective Linear/Cap Dropper Replacement • Lowest cost and component count buck converter solution • Fully integrated auto-restart for short-circuit and open loop
|
Original
|
LNK302/304-306
LNK302
|
PDF
|
EPC17
Abstract: No abstract text available
Text: LNK64x7-64x8 LinkSwitch-3 Family Energy-Efficient, Accurate Primary-Side Regulation CV/CC Switcher for Adapters and Chargers + Product Highlights DC Output Dramatically Simplifies CV/CC Converters • Eliminates optocoupler and all secondary CV/CC control circuitry
|
Original
|
LNK64x7-64x8
EPC17
|
PDF
|
LQA30T300
Abstract: No abstract text available
Text: LQA30T300 Qspeed Family 300 V, 30 A Q-Series Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 30 300 53 2.85 0.6 General Description A V nC A This device has the lowest QRR of any 300V Silicon diode.
|
Original
|
LQA30T300
Bangalore-560052
|
PDF
|
LNK406EG
Abstract: Lutron relco scr dimmer circuit diagram WN575149 WICKMAN FUSE switching transformer winding high power AVERAGE QUASI PEAK AND PEAK DETECTOR BC-359 Bobbin, RM8 Low Profile, Vertical, 12 pins
Text: Title Reference Design Report for a High Efficiency ≥85% , High Power Factor (>0.9) TRIAC Dimmable 14 W LED Driver Using LinkSwitchTM-PH LNK406EG Specification 90 VAC – 265 VAC Input; 28 VTYP, 0.5 A Output Application LED Driver Author Applications Engineering Department
|
Original
|
LNK406EG
RDR-195
and-727-689
LNK406EG
Lutron
relco
scr dimmer circuit diagram
WN575149
WICKMAN FUSE
switching transformer winding high power
AVERAGE QUASI PEAK AND PEAK DETECTOR
BC-359
Bobbin, RM8 Low Profile, Vertical, 12 pins
|
PDF
|
TFS760
Abstract: transformer ee10 schematic diagram of ctr flyback tv
Text: TFS757-764HG HiperTFS Family Combined Two-Switch Forward and Flyback Power Supply Controllers with Integrated High Voltage MOSFETs Key Benefits • Single chip solution for two-switch forward main and flyback standby • High integration allows smaller form factor and higher power
|
Original
|
TFS757-764HG
TFS760
transformer ee10
schematic diagram of ctr flyback tv
|
PDF
|
|
TFS760
Abstract: transformer ee10 5612a schematic diagram of ctr flyback tv eSIP-16
Text: TFS757-764HG HiperTFS Family Combined Two-Switch Forward and Flyback Power Supply Controllers with Integrated High Voltage MOSFETs Key Benefits • Single chip solution for two-switch forward main and flyback standby • High integration allows smaller form factor and higher power
|
Original
|
TFS757-764HG
TFS760
transformer ee10
5612a
schematic diagram of ctr flyback tv
eSIP-16
|
PDF
|
tny 175 pn
Abstract: TNY378 tny 286 pn tny377 EEL19 transformer 1N4007 PN diode ,SPECIFICATIONS TNY375 C0709 tny 380 pn
Text: Obsolete Product – Not Recommended for New Designs TNY375-380 TinySwitch-PK Family Energy-Efficient, Off-Line Switcher With Enhanced Peak Power Performance Product Highlights Lowest System Cost with Enhanced Flexibility • Simple ON/OFF control, no loop compensation needed
|
Original
|
TNY375-380
tny 175 pn
TNY378
tny 286 pn
tny377
EEL19 transformer
1N4007 PN diode ,SPECIFICATIONS
TNY375
C0709
tny 380 pn
|
PDF
|
GP1200
Abstract: sst 90 JEP95 SST12LP00 SST12LP00-QV6E
Text: 2.4 GHz Power Amplifier SST12LP00 Preliminary Specifications SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • Single 3.3V Supply • Small Signal Gain: – Typically 29 dB • 23 dBm P-1dB Output • High PAE = 50% at P-1dB • Low idle current
|
Original
|
SST12LP00
SST12LP002
SST12LP00
S71283-00-000
GP1200
sst 90
JEP95
SST12LP00-QV6E
|
PDF
|
SST11LP11
Abstract: SST11LP11-QVC SST11LP11-QVCE SST11LP11-QVC-K
Text: 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications SST11LP114.9-5.8 GHz High-Linearity Power Amplifier FEATURES: APPLICATIONS: • Gain: – ~24 dB gain across the 4.9-5.8 GHz band • High linear output power: – ~25 dBm P1dB
|
Original
|
SST11LP11
SST11LP114
QAM/54
16-contact
S71284-00-000
SST11LP11
SST11LP11-QVC
SST11LP11-QVCE
SST11LP11-QVC-K
|
PDF
|
gp1214
Abstract: sst 90 SST12LP14 SST12LP14-QVC SST12LP14-QVCE SST12LP14-QVC-K
Text: 2.4 GHz Power Amplifier SST12LP14 Preliminary Specifications SST12LP142.4 GHz Power Amplifier FEATURES: • • • • • • High Gain: – Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power: – >26.5 dBm P1dB
|
Original
|
SST12LP14
SST12LP142
11g/b
S71279-00-000
gp1214
sst 90
SST12LP14
SST12LP14-QVC
SST12LP14-QVCE
SST12LP14-QVC-K
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LCS700-708 HiperLCS Family Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers Product Highlights Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components
|
Original
|
LCS700-708
ov5-471-1021
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INN20x3-20x5 InnoSwitch-CH Family Off-Line CV/CC Flyback Switcher IC with Integrated MOSFET, Synchronous Rectification and Feedback Product Highlights Highly Integrated, Compact Footprint • Incorporates flyback controller, 650 V MOSFET, secondary-side SR FET
|
Original
|
INN20x3-20x5
|
PDF
|
berg din
Abstract: 6629 FLIR
Text: PRODUCT NUMBER SEE TABLE CONTACTS KOSEP1ECE BERG ISSUE SH NO. E L E C T R O N IC S w iiic n w a s Mkñ/Mi .QCfcÌoS/jÙCtt.13 m m - W L M m W V U W W flir W ^ I PUHM» UUW id tf UK ñtVMmtL UL U8 HB tf M m e jateo/sn ot jeu f a n 6/22/93 m &U- I 4ICROPAX 025M, STR RECPT.
|
OCR Scan
|
610/150uV3
/3-81u
GXT-60tfV1
berg din
6629
FLIR
|
PDF
|
T112-16
Abstract: Halbleiterbauelemente DDR Datenblattsammlung Tesla katalog tesla schaltkreise mikroelektronik datenblattsammlung VEB mikroelektronik mikroelektronik RFT mikroelektronik DDR rft katalog
Text: Di vorliegenden Datenblätter dienen nur sur- Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente ©ingestuften Sortimente© Aus den Datenblättern können keine Liefer- oder ProduktVer bindlichkeiten abgeleitet werden*
|
OCR Scan
|
DDR-1035
T112-16
Halbleiterbauelemente DDR
Datenblattsammlung
Tesla katalog
tesla schaltkreise
mikroelektronik datenblattsammlung
VEB mikroelektronik
mikroelektronik RFT
mikroelektronik DDR
rft katalog
|
PDF
|
2T931A
Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K
|
OCR Scan
|
MOKP51KOB,
KTC631
TI2023
II2033
TT213
TI216
fI217
II302
XI306
n306A
2T931A
KT853
2T926A
KT838A
2T803A
2T809A
2T904A
2T808A
2T603
2T921A
|
PDF
|