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    KPT081M32

    Abstract: 064X064
    Text: Si Phototransistor KPT081M32 KPT081M32 Features ø3.8±0.2 • NPN phototransistor • Transparent epoxy potting • Low leak current Applications 24MIN 1.5MAX 5.1±0.5 1.8±0.5 ø3.0±0.2 • Optical switches • Optical encoders • Photo-isolator • Camera stroboscopes


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    PDF KPT081M32 24MIN 1000lux( 2856K) KPT081M32 064X064