Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA316E~KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D 2 DIM A B C D G H A ・Reduce a Quantity of Parts and Manufacturing Process.
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KRA316E
KRA322E
KRA320E
KRA321E
KRA319E
KRA318E
KRA317E
KRA316E
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322E
Abstract: KRA316E KRA317E KRA318E KRA319E KRA320E KRA321E KRA322E
Text: SEMICONDUCTOR KRA316E~KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process.
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KRA316E
KRA322E
KRA320E
KRA321E
KRA318E
KRA317E
KRA319E
KRA316E
322E
KRA317E
KRA318E
KRA319E
KRA320E
KRA321E
KRA322E
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KRA316V
Abstract: KRA317V KRA318V KRA319V KRA320V KRA321V KRA322V
Text: SEMICONDUCTOR KRA316V~KRA322V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. G 1 3 K H A D 2 Reduce a Quantity of Parts and Manufacturing Process.
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KRA316V
KRA322V
KRA320V
KRA321V
KRA318V
KRA317V
KRA319V
KRA316V
KRA317V
KRA318V
KRA319V
KRA320V
KRA321V
KRA322V
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KRA316
Abstract: KRA317 KRA318 KRA319 KRA320 KRA321 KRA322
Text: SEMICONDUCTOR KRA316~KRA322 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B M M ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. J A TYPE NO. OUT R1 R2 R1 kή
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KRA316
KRA322
KRA316
KRA318
KRA321
KRA320
KRA317
KRA317
KRA318
KRA319
KRA320
KRA321
KRA322
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA316E~KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G A 2 C H ・Reduce a Quantity of Parts and Manufacturing Process.
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KRA316E
KRA322E
KRA317E
KRA318E
KRA319E
KRA320E
KRA321E
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marking p2
Abstract: KRA316E P2 marking
Text: SEMICONDUCTOR KRA316E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking P2 No. 2000. 12. 27 Item Marking Description Device Mark P2 KRA316E hFE Grade - - Revision No : 0 1/1
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KRA316E
marking p2
KRA316E
P2 marking
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA316V~KRA322V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES 2008. 11. 20 Revision No : 2 1/6
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KRA316V
KRA322V
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA316E~KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES 2008. 11. 20 Revision No : 2 1/6
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KRA316E
KRA322E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA316~KRA322 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES 2008. 10. 30 Revision No : 5 1/6
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KRA316
KRA322
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KRA316
Abstract: KRA317 KRA318 KRA319 KRA320 KRA321 KRA322
Text: SEMICONDUCTOR KRA316~KRA322 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B M M With Built-in Bias Resistors. 2 J A Simplify Circuit Design. 3 1 G Reduce a Quantity of Parts and Manufacturing Process.
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KRA316
KRA322
KRA316
KRA319
KRA321
KRA320
KRA318
KRA317
KRA317
KRA318
KRA319
KRA320
KRA321
KRA322
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA316V~KRA322V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. G H A D 2 ・Reduce a Quantity of Parts and Manufacturing Process.
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KRA316V
KRA322V
KRA317V
KRA318V
KRA319V
KRA320V
KRA321V
KRA316V322V
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transistor marking P8
Abstract: KRA316V KRA317V KRA318V KRA319V KRA320V KRA321V KRA322V
Text: SEMICONDUCTOR KRA316V~KRA322V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. G 1 3 K H A D 2 ᴌReduce a Quantity of Parts and Manufacturing Process.
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KRA316V
KRA322V
KRA320V
KRA321V
KRA318V
KRA317V
KRA319V
KRA316V
transistor marking P8
KRA317V
KRA318V
KRA319V
KRA320V
KRA321V
KRA322V
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KRA316
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA316 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 P2 1 2 Item Marking Description Device Mark P2 KRA316 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRA316
KRA316
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KRA321E
Abstract: 322E KRA316E KRA317E KRA318E KRA319E KRA320E KRA322E
Text: SEMICONDUCTOR KRA316E~KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D H G A 2 Reduce a Quantity of Parts and Manufacturing Process.
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KRA316E
KRA322E
KRA316E
KRA317E
KRA318E
KRA320E
KRA321E
KRA316316E
KRA321E
322E
KRA317E
KRA318E
KRA319E
KRA320E
KRA322E
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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kec 168
Abstract: No abstract text available
Text: KRA316KRA322 SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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KRA316SEMICONDUCTOR
EPITAXIALKRA322TRANSISTOR
KRA316
KRA317
KRA318
KRA319
KRA320
KRA321
KRA322
kec 168
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r2kl
Abstract: No abstract text available
Text: SEM ICONDUCTOR KRA316-KRA322 TECHNI CAL DATA EPI TAXI AL PLANAR PNP T RANSI ST OR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. F— • Simplify Circuit Design. • Reduce a Quantity o f Parts and Manufacturing Process.
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KRA316-KRA322
KRA316
KRA317
KRA318
KRA319
RA320
KRA321
KRA322
r2kl
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A316V
Abstract: No abstract text available
Text: SEM ICONDUCTOR KRA316V-KRA322V TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATIO N FEA T U RE S • With Built-in Bias Resistors. • Simplify Circuit Design. DIM • Reduce a Quantity o f Parts and Manufacturing Process.
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KRA316V-KRA322V
KRA316V
KRA317V
KRA318V
KRA320V,
KRA321V
-KRA322V
KRA320V
KRA321V
A316V
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070010
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA316E-KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SW IT C H IN G A PPLICATION. IN TERFA CE CIR C U IT A N D DRIVER C IR C U IT A PPLIC A TIO N FEA T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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KRA316E-KRA322E
KRA316E
KRA317E
KRA318E
KRA31
KRA320E
KRA322E
070010
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transistor D 322
Abstract: kec 168 transistor marking P8 A316 KRA316 KRA317 KRA318 KRA319 KRA320 KRA321
Text: KOREA ELECTRONICS CO.,LTD. KRA316KRA322 SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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KRA322
KRA316
KRA317
KRA318
KRA319
KRA320
KRA321
KRA322
Io20mA
transistor D 322
kec 168
transistor marking P8
A316
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Untitled
Abstract: No abstract text available
Text: KRA316EKRA322E SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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KRA316ESEMICONDUCTOR
EPITAXIALKRA322E
KRA316E
KRA317E
KRA318E
KRA319E
KRA320E
KRA321E
KRA322E
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