KSB811
Abstract: KSD1021
Text: KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current : IC= -1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
PDF
|
KSB811
KSD1021
350mW
O-92S
KSB811
KSD1021
|
transistor ic1A
Abstract: KSD1021 KSB811
Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage
|
Original
|
PDF
|
KSD1021
KSB811
350mW
100mA
transistor ic1A
KSD1021
KSB811
|
KSB811
Abstract: KSD1021
Text: KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current : IC= -1A • Collector Power Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
PDF
|
KSB811
KSD1021
350mW
O-92S
KSB811
KSD1021
|
KSB811
Abstract: KSD1021
Text: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
PDF
|
KSD1021
KSB811
350mW
O-92S
KSB811
KSD1021
|
KSB811
Abstract: KSD1021
Text: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSD1021 • Collector Current IC= -1A • Collector Dissipation PC=350mW ABSOLUTE MAXIMUM RATING TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage
|
Original
|
PDF
|
KSB811
O-92S
KSD1021
350mW
-10mA,
-100mA
-10mA
KSB811
KSD1021
|
KSB811
Abstract: KSD1021
Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage
|
Original
|
PDF
|
KSD1021
KSB811
350mW
KSB811
KSD1021
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KSD1020 TRANSISTOR NPN 1. EMITTER FEATURES z Complementary to KSB811 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
|
Original
|
PDF
|
O-92S
KSD1020
KSB811
100mA
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KSB811 TRANSISTOR PNP 1. EMITTER FEATURES z Complement to KSD1021 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
|
Original
|
PDF
|
O-92S
KSB811
KSD1021
-10mA
-10mA
|
Untitled
Abstract: No abstract text available
Text: KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current : IC= -1A • Collector Power Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
PDF
|
KSB811
KSD1021
350mW
O-92S
KSB811
|
KSB811
Abstract: No abstract text available
Text: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSD1021 • Collector Current: IC= -1A • Collector Dissipation: PC=350mW ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG
|
Original
|
PDF
|
KSB811
KSD1021
350mW
O-92S
KSB811
|
KSB811
Abstract: No abstract text available
Text: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
PDF
|
KSD1021
KSB811
350mW
O-92S
KSD1021
KSB811
|
KSB811
Abstract: KSD1021
Text: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
PDF
|
KSD1021
KSB811
350mW
O-92S
KSB811
KSD1021
|
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
|
Original
|
PDF
|
|
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM
|
Original
|
PDF
|
UF4003.
UF4004.
UF4005.
UF4006.
UF4007.
USB10H.
USB1T1102
USB1T11A.
vKA75420M
W005G
FQPF*7N65C APPLICATIONS
bc548 spice model
bf494 spice model
spice model bf199
LM3171
BC517 spice model
bc547 spice model
BF494 spice
MOC3043-M spice model
SPICE model BC237
|
|
|
Untitled
Abstract: No abstract text available
Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current tc*1A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATINGS TA=25'C Sym bol C haracteristic Collector-Base Voltage Collector-Em itler Voltage
|
OCR Scan
|
PDF
|
KSD1021
KSB811
350mW
|
Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSB811 AUDIO FREQUENCY POWER AMPLIFIER T O -92S • C om plem ent to KSD 1021 • C ollector C urrent: lc= -1A • C ollector D issipation: Pc=350m W ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage
|
OCR Scan
|
PDF
|
KSB811
|
B34 transistor
Abstract: t25E S03 pnp KSB811 KSD1021
Text: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSD1021 • Collector Current lc= -1 A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage
|
OCR Scan
|
PDF
|
KSB811
KSD1021
350inW
O-92S
-100JIA,
-10mA,
b4142
00247D4
B34 transistor
t25E
S03 pnp
KSB811
KSD1021
|
TRANSISTOR a43
Abstract: KSB811 KSD1021
Text: SAMSU NG SEM ICO NDUCTOR INC 14E D KSB811 | 7 ^ 4 1 4 2 00Gfc,fl42 1 | PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER T O -9 2 S • Complement to KSD1021 • Collector Current lc =-1 A • Collector Dissipation Pc =350mW ABSOLUTE MAXIMUM RATINGS T«=25°C
|
OCR Scan
|
PDF
|
00Dfc
KSB811
KSD1021
350mW
O-92S
-100/jA,
TRANSISTOR a43
KSD1021
|
KSB811
Abstract: KSD1021
Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current lc =1A • Collector Dissipation Pc = isomW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit VcBO VcEO V ebo lc Pc
|
OCR Scan
|
PDF
|
KSD1021
KSB811
O-92S
lc-10mA,
002404b
KSB811
KSD1021
|
Untitled
Abstract: No abstract text available
Text: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSD1021 • Collector Current lc= -1A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATING Ta*25X: C h aracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage
|
OCR Scan
|
PDF
|
KSB811
KSD1021
350mW
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)
|
OCR Scan
|
PDF
|
0Q11524
OT-23
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST4124
KST4126
BCW29
O-92S
|
BD53A
Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623
|
OCR Scan
|
PDF
|
OT-23
KSC2223
KSC2715
KSC1623
KSC2715
KSC1674
BD53A
KSA733
KSC1330
KSC945
BD139
BD433 TO92
KSE 13007 L
ss8050 sot-23
KSE13009F
KSP10
|
transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
|
OCR Scan
|
PDF
|
OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
|
ksd 250v 10a
Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715
|
OCR Scan
|
PDF
|
OT-23
KSC2223
KSC2715
KSC1674
KSC1674/
KSC167Î
KSC838/KSC167
ksd 250v 10a
ksd 202
ksd 180
13003 bd
ksd 250v
ksd 75
bow 94c
bdx 44b
ksd 250V 5A
d5072
|
