Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KSB907 Search Results

    SF Impression Pixel

    KSB907 Price and Stock

    Fairchild Semiconductor Corporation KSB907TU

    Small Signal Bipolar Transistor, 3A, 40V, PNP, TO-251 '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics KSB907TU 2,347 1
    • 1 $0.1024
    • 10 $0.1024
    • 100 $0.0963
    • 1000 $0.087
    • 10000 $0.087
    Buy Now

    KSB907 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSB907 Fairchild Semiconductor PNP Silicon Darlington Transistor Original PDF
    KSB907 Fairchild Semiconductor PNP SILICON DARLINGTON TRANSISTOR Scan PDF
    KSB907 Samsung Electronics Transistor Function Guide Scan PDF
    KSB907TU Fairchild Semiconductor PNP Silicon Darlington Transistor Original PDF

    KSB907 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSD1222 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Built in a Damper Diode at E-C • Darlingt on TR • Complement to KSB907 I-PACK ABSOLUTE MAXIMUM RATINGS Characteristic


    Original
    PDF KSD1222 KSB907

    KSB907

    Abstract: KSD1222
    Text: KSD1222 KSD1222 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor


    Original
    PDF KSD1222 KSB907 KSB907 KSD1222

    Untitled

    Abstract: No abstract text available
    Text: KSB907 KSB907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD1222 I-PACK 1 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor


    Original
    PDF KSB907 KSD1222

    Untitled

    Abstract: No abstract text available
    Text: KSB907 KSB907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD1222 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor


    Original
    PDF KSB907 KSD1222 O-251

    225UA

    Abstract: KSB907 KSD1222
    Text: KSB907 KSB907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD1222 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor


    Original
    PDF KSB907 KSD1222 225UA KSB907 KSD1222

    Untitled

    Abstract: No abstract text available
    Text: KSD1222 KSD1222 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor


    Original
    PDF KSD1222 KSB907 O-251

    KSB907

    Abstract: KSD1222
    Text: KSD1222 KSD1222 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlingt on TR Complement to KSB907 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor


    Original
    PDF KSD1222 KSB907 KSB907 KSD1222

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


    Original
    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original
    PDF

    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


    Original
    PDF Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original
    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    BDX548

    Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692
    Text: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8


    Original
    PDF O-126 KSD985 KSD986 KSD1692 BD675A BD677A KSE800 KSE801 MJE800 TIP146 BDX548 KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692

    KSB907

    Abstract: KSD1222
    Text: KSB907 PNP SILICON DARLINGTON TRANSISTO R POW ER AMPLIFIER A PPLICATIO NS • • • • • H ig h D C C u rre n t G a in L o w C o lle c to r E m itte r S a tu ra tio n V o lta g e B u ilt in a D a m p e r D io d e a t E -C D a rlin g t o n T R C o m p le m e n t to K S D 1 2 2 2


    OCR Scan
    PDF KSB907 KSD1222 KSB907 KSD1222

    Untitled

    Abstract: No abstract text available
    Text: KSB907 PNP SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • • High DC C urrent Gain Low C ollecto r E m itter Saturation Voltage Built in a D am per Diode at E-C D arlingt on TR C om plem ent to KSD 1222 ABSOLUTE MAXIMUM RATINGS


    OCR Scan
    PDF KSB907

    Untitled

    Abstract: No abstract text available
    Text: KSD1222 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan
    PDF KSD1222 KSB907

    KSB907

    Abstract: KSD1222 60V transistor npn 2a 5001B
    Text: KSD1222 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • • High DC C urrent Gain Low C ollecto r E m itter Saturation Voltage Built in a D am per Diode at E-C D arlingt on TR C om plem ent to KSB907 ABSOLUTE MAXIMUM RATINGS Rating


    OCR Scan
    PDF KSD1222 KSB907 175/iA KSB907 60V transistor npn 2a 5001B

    Untitled

    Abstract: No abstract text available
    Text: KSB907 PNP SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS • High D C Current Gain • Low Collector Emitter Saturation Voltage • Built in a Damper Diode at E-C •Darlington T R • Complement to KSD1222 ABSOLUTE MAXIMUM RATINGS Rating Unit


    OCR Scan
    PDF KSB907 KSD1222

    Untitled

    Abstract: No abstract text available
    Text: KSD1222 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • • High DC C urrent Gain Low C ollector Em itter Saturation Voltage Built in a D am per Diode at E-C Darlingt on TR C om plem ent to KSB907 ABSOLUTE MAXIMUM RATINGS R a tin g


    OCR Scan
    PDF KSD1222 KSB907

    LB 124 transistor

    Abstract: No abstract text available
    Text: KSB907 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSD1222 ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan
    PDF KSB907 KSD1222 LB 124 transistor

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan
    PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    ksd 168

    Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
    Text: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220


    OCR Scan
    PDF KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 ksd 168 KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027

    KSD201

    Abstract: kse800 KS01692 KSE703 KSA1304 KSA1614 KSB1015 KSB1366 KSC3296 KSD1273
    Text: SAMSUNG E L E C T R O N I C S INC bOE D • 7 cíbmM5 TRANSISTORS 2.1.6 0011S3M 67b ■ SMfiK FUNCTION GUIDE T0-220 F Type Transistors Device Type VcEO (A) <V) 1.5 150 3 55 NPN KSC3296 W MIN KSA1304 10 0.5 40 KSA1614 5 0.5 40 PNP Condition *>FE VcE<s«tXV)


    OCR Scan
    PDF T0-220 KSC3296 KSA1304 KSA1614 KSD1406 KSB1015 KSD2012 KSB1366 KSD1273 KSD1944 KSD201 kse800 KS01692 KSE703 KSD1273

    Untitled

    Abstract: No abstract text available
    Text: FUNCTION GUIDE TRANSISTORS 2.1.6 T0-220 F Type Transistors Device Type (A) (V) 1.5 150 3 55 NPN KSC3296 Condition Condition hFE •e V ce (V) (A) M IN KSA1304 10 0.5 40 KSA1614 5 0.5 40 240 PNP M AX lc (A) Ib (A) 75 0.5 0.05 VciKsatKV) TYP Condition M AX


    OCR Scan
    PDF T0-220 KSC3296 KSD1406 KSD2012 KSD1273 KSD1944 KSD1408 KSD1362 KSD1588 KSC3158