Untitled
Abstract: No abstract text available
Text: SDB10100PI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features „ Low forward voltage drop and leakage current „ Low power loss and High efficiency „ High surge capability „ Dual common cathode rectifier „ Full lead-free Pb component and RoHS compliant device
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SDB10100PI
O-220F-3L
SDB10100PI
D0O005-002
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PDF
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SDB10100PI
Abstract: No abstract text available
Text: SDB10100PI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features y Low forward voltage drop and leakage current y Low power loss and High efficiency y High surge capability y Dual common cathode rectifier y Full lead-free Pb component and RoHS compliant device
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Original
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SDB10100PI
O-220F-3L
SDB10100PI
D0O005-002
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PDF
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Untitled
Abstract: No abstract text available
Text: SD DB20 040PH H Schottky Barrier B Rectiffier 40 0V, 20A POWER R SCHOT TTKY RE ECTIFIER Fe eatures Low L forward d voltage drrop Low L power loss and Hiigh efficienccy Low L leakage current High H surge capability Pin Co onfiguration Pin 1: Cathode
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Original
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040PH
O-220F-2L
SDB2040
KSD-D0Q033-002
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PDF
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SDB1060P
Abstract: SDB1060PI SDB1060
Text: S SDB1060P PI Schottky Barrier B Rectiffier DUAL CO OMMON CATHODE SCH HOTTKY RECTIF FIER Fe eatures Low L forward d voltage drrop and leakage curren nt Low L power loss and Hiigh efficienccy High H surge capability 1 Dual D common cathode e rectifier
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Original
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SDB1060P
O-220F-3L
SDB1060s
KSD-D0O003-001
SDB1060P
SDB1060PI
SDB1060
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PDF
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Untitled
Abstract: No abstract text available
Text: SD DB20 040PH H Schottky Barrier B Rectiffier 40 0V, 20A POWER R SCHOT TTKY RE ECTIFIER Fe eatures Low L forward d voltage drrop Low L power loss and Hiigh efficienccy Low L leakage current High H surge capability Pin Co onfiguration Pin 1: Cathode
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Original
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040PH
O-220F-2L
SDB2040
KSD-D0Q033-002
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PDF
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Untitled
Abstract: No abstract text available
Text: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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KSB1151
O-126
PW10ms,
Cycle50%
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PDF
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marking code NT 4 PIN
Abstract: No abstract text available
Text: S SDB1060P PI Schottky Barrier B Rectiffier DUAL CO OMMON CATHODE SCH HOTTKY RECTIF FIER Fe eatures Low L forward d voltage drrop and leakage curren nt Low L power loss and Hiigh efficienccy High H surge capability 1 Dual D common cathode e rectifier
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Original
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SDB1060P
O-220F-3L
KSD-D0O003-001
marking code NT 4 PIN
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PDF
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4N60D
Abstract: No abstract text available
Text: SC CT04 4N60D D Trriac 60 00V, 4A STANDA ARD TRIAC 2, 4 4 Th his device iss suitable fo or low power AC switch hing application, 1: T1 ph hase controll application n such as fa an speed an nd temperatture 2, 4: T2 mo odulation co ontrol, lighting control and
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Original
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4N60D
O-252
KSD-S6O001-000
4N60D
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PDF
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ksd 150 full safe
Abstract: K*D1691 ksd 75
Text: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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KSB1151
O-126
PW10ms,
Cycle50%
ksd 150 full safe
K*D1691
ksd 75
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PDF
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Untitled
Abstract: No abstract text available
Text: SCT0 01L60 Trriac 60 00V, 1A LOGIC LEVEL L T TRIAC Th his device iss suitable fo or low power AC switch hing application, ph hase controll application n such as fa an speed an nd temperatture mo odulation co ontrol, lighting control and a static sw witching relay.
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Original
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01L60
KSD-S0A001-000
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PDF
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triac 600v. 1a. to 92
Abstract: Triac 600v 1a to92 tr100 01l60 D-S0A001-000
Text: SCT0 01L60 Trriac 60 00V, 1A LOGIC LEVEL L T TRIAC Th his device iss suitable fo or low power AC switch hing application, ph hase controll application n such as fa an speed an nd temperatture mo odulation co ontrol, lighting control and a static sw witching relay.
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Original
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01L60
KSD-S0A001-000
triac 600v. 1a. to 92
Triac 600v 1a to92
tr100
01l60
D-S0A001-000
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PDF
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4N60D
Abstract: GE SC triac 4N60
Text: SC CT04 4N60D D Trriac 60 00V, 4A STANDA ARD TRIAC 2, 4 4 Th his device iss suitable fo or low power AC switch hing application, 1: T1 ph hase controll application n such as fa an speed an nd temperatture 2, 4: T2 mo odulation co ontrol, lighting control and
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Original
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4N60D
O-252
KSD-S6O001-000
GE SC triac
4N60
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PDF
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ksd 150 full safe
Abstract: KSB1151 ksd 75
Text: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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KSB1151
O-126
ksd 150 full safe
KSB1151
ksd 75
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PDF
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ksd 150 full safe
Abstract: KSB1151
Text: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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KSB1151
O-126
ksd 150 full safe
KSB1151
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PDF
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ksd 150 full safe
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE T O -126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcEO 150 V C ollector-E m itter Voltage : KSD 985
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OCR Scan
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KSD985/986
KSD986
ksd 150 full safe
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PDF
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Untitled
Abstract: No abstract text available
Text: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • C om plem ent to KSD 526 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic V cB O Sym bol - 80 V C ollecto r-E m itte r Voltage V cE O - 80 V Em itter-Base Voltage
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OCR Scan
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KSB596
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PDF
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coelec
Abstract: No abstract text available
Text: KSD568/569 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSB707/708 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R a tin g U n it C ollector-Base Voltage VcEO 100 V C ollector-E m itter Voltage : KSD 568
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OCR Scan
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KSD568/569
KSB707/708
KSD569
coelec
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PDF
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Untitled
Abstract: No abstract text available
Text: KSB707/708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSD 568/569 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcBO -8 0 V C ollector-E m itter V oltage : B707
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OCR Scan
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KSB707/708
300jis,
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PDF
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Untitled
Abstract: No abstract text available
Text: KSB1098 PNP SILICON DARLINGTON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO -22 0 F • C om plem ent to KSD 1589 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcB O S ym bol -1 0 0
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OCR Scan
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KSB1098
300jis,
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PDF
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Untitled
Abstract: No abstract text available
Text: KSB1121 PNP EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT DRIVER APPLICATIONS • • • • Low C ollector-E m itter Saturation Voltage Large C urrent C apacity and W ide SO A Fast Sw itching Speed C om plem ent to KSD 1621 ABSOLUTE MAXIMUM RATING TA=25°C
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OCR Scan
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KSB1121
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSB811 AUDIO FREQUENCY POWER AMPLIFIER T O -92S • C om plem ent to KSD 1021 • C ollector C urrent: lc= -1A • C ollector D issipation: Pc=350m W ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage
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OCR Scan
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KSB811
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PDF
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Untitled
Abstract: No abstract text available
Text: KSB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION: PC=1.3W TA=25°C Complement to KSD 1691 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol -6 0 V Collector-Emitter Voltage
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OCR Scan
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KSB1151
O-126
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSB810 AUDIO FREQUENCY AMPLIFIER TO -92S • C om plem ent to KSD 1020 ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent (DC)
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OCR Scan
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KSB810
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PDF
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KSB1116
Abstract: TRANSISTOR 1616 ac
Text: KSB1116/1116A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • C om plem ent to KSD 1616/161 6A ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol C ollector-Base Voltage :K S B 1 1 1 6 : KSB1116A C ollector-E m ltter V oltage : KSB1116
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OCR Scan
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KSB1116/1116A
KSB1116A
KSB1116
KSB116A
KSB1116
TRANSISTOR 1616 ac
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PDF
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