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    KTA1276 TRANSISTOR Search Results

    KTA1276 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    KTA1276 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTA1276

    Abstract: No abstract text available
    Text: KTA1276 KTA1276 TRANSISTOR PNP TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF KTA1276 O-220 -10mA, -500mA -200mA KTA1276

    KTA1276

    Abstract: KTA1276 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors KTA1276 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -30


    Original     		PDF O-220 KTA1276 O-220 -10mA, -500mA -200mA KTA1276 KTA1276 transistor

    KTA1276

    Abstract: KTC3230
    Text: SEMICONDUCTOR KTA1276 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌGood Linearity of hFE. F ᴌComplementary to KTC3230. P B Q D UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V


    Original     		PDF KTA1276 KTC3230. KTA1276 KTC3230

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors KTA1276 TO – 220 TRANSISTOR PNP 1. BASE FEATURES z High Transition Frequency z Good Linearity of hFE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220 KTA1276 -10mA

    KTA1276

    Abstract: KTC3230
    Text: SEMICONDUCTOR KTC3230 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. CORDLESS TELEPHONE TX FINAL AMPLIFIER. APPLICATION FOR 1.7MHz SYSTEM. E A R S F FEAUTRES P Q D B ᴌGood Linearity of hFE. ᴌComplementary to KTA1276. L C MAXIMUM RATING Ta=25ᴱ


    Original     		PDF KTC3230 KTA1276. KTA1276 KTC3230

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    KTA1276

    Abstract: KTC3230
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3230 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. CORDLESS TELEPHONE TX FINAL AMPLIFIER. APPLICATION FOR 1.7MHz SYSTEM. FEAUTRES • Good Linearity of Iife• Complementary to KTA1276.


    OCR Scan     		PDF KTC3230 KTA1276. 220AB 100x100x2mm 50x50x2mm KTA1276 KTC3230

    KTA1276 transistor

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTA1276 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Good Linearity of Iife• Complementary to KTC3230. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF KTC3230. KTA1276 KTA1276 transistor

    KTA1276

    Abstract: KTC3230
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1276 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Good Linearity of Iife• Complementary to KTC3230. MILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF KTA1276 KTC3230. 220AB -10mA, KTA1276 KTC3230

    transistor a1276

    Abstract: a1276 K A1276 KTA1276 1.7MHz cordless telephone KTC3230 Scans-00125382
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3230 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. CORDLESS TELEPHONE TX FINAL AMPLIFIER. APPLICATION FOR 1.7MHz SYSTEM. FEAUTRES • Good Linearity of Iife. • Complementary to KTA1276. MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF KTC3230 KTA1276. 100x100x2mm 50x50x2mm transistor a1276 a1276 K A1276 KTA1276 1.7MHz cordless telephone KTC3230 Scans-00125382