KTA1038
Abstract: KTC2018
Text: SEMICONDUCTOR KTA1038 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌHigh Breakdown Voltage : VCEO=-100V. F ᴌLow Collector-Emitter Saturation Voltage. P Q D B : VCE sat =-2.0V(Max.) ᴌComplementary to KTC2018.
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KTA1038
-100V.
KTC2018.
100ms
KTA1038
KTC2018
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KTA1038
Abstract: KTC2018
Text: SEMICONDUCTOR KTA1038 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌHigh Breakdown Voltage : VCEO=-100V. F ᴌLow Collector-Emitter Saturation Voltage. P Q D B : VCE sat =-2.0V(Max.) ᴌComplementary to KTC2018.
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KTA1038
-100V.
KTC2018.
100ms
KTA1038
KTC2018
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KTA1038
Abstract: KTC2018
Text: SEMICONDUCTOR KTC2018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌHigh Breakdown Voltage : VCEO=100V. F ᴌLow Collector Saturation Voltage :VCE sat =2.0V(Max.). P Q D B ᴌComplementary to KTA1038. MAXIMUM RATINGS (Ta=25ᴱ)
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KTC2018
KTA1038.
KTA1038
KTC2018
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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KTA1038
Abstract: KTC2018
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1038 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : V ceo=_100V. • Low Collector-Emitter Saturation Voltage. : VCE sat =_2.0V(Max.) • Complementary to KTC2018.
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OCR Scan
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KTA1038
KTC2018.
KTA1038
KTC2018
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KTA1038
Abstract: KTC2018
Text: SEMICONDUCTOR KTC2018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : V ceo=100V. • Low Collector Saturation Voltage :VcE sat =2.0V(Max.). • Complementary to KTA1038. DIM MILLIMETERS 0.60
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OCR Scan
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KTC2018
KTA1038.
O-22OAB
KTA1038
KTC2018
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KTA1038
Abstract: KTC2018
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL D A T A KTC2018 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : V c e o = 1 0 0 V . • Low Collector Saturation Voltage :VcE sat =2.0V(Max.). • Complementary to KTA1038.
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OCR Scan
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KTC2018
KTA1038.
220AB
KTA1038
KTC2018
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PDF
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KTA1038
Abstract: KTC2018
Text: SEMICONDUCTOR TECHNICAL DATA KTA1038 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S p FEATURES H DIM B C D E F SYMBOL RATING UNIT Collector-Base Voltage V CBO -100 V Collector-Emitter Voltage V CEO -100 V Em itter-Base Voltage " P O’
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OCR Scan
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KTA1038
KTC2018.
O-22OAB
KTA1038
KTC2018
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