C3198
Abstract: C3198L KTC3198L marking "gr"
Text: SEMICONDUCTOR KTC3198L MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 816 C3198L GR No. Item 1 KEC K 2 Lot No. 816 98.06.23 Marking Description KEC CORP. 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 Device Name C3198L
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KTC3198L
C3198L
C3198
C3198L
KTC3198L
marking "gr"
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KTC3198L
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C ・Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=0.2dB(Typ.). f=(1kHz).
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KTC3198L
150mA
KTA1266L.
100mA,
30MHz
100Hz,
KTC3198L
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS L ID . KTC3198L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION Package: TO-92 FEATURES * Excellent Hfe Linearity :Hfe 2 =100(Typ) atVce=6V, Ic= 150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mAH). 95(Typ).
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KTC3198L
150mA.
toKTA1266L
100uA
100uA
150mA
100mA
10VIeF
10VJe
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=0.2dB(Typ.). f=(1kHz).
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KTA1266L.
KTC3198L
150mA
150mA
100mA,
30MHz
100Hz,
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C ᴌExcellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.). f=(1kHz).
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KTC3198L
150mA
KTA1266L.
100mA,
30MHz
100Hz,
KTA1266L
KTC3198L
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR TECHNICAL DATA KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of Iif e : hFE 2 =100(Typ.) at V Ce =6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).
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OCR Scan
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KTC3198L
150mA
KTA1266L.
150mA
100mA,
30MHz
100Hz
KTA1266L
KTC3198L
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of h |.|. : hFE 2 =100(Typ.) at V ce=6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).
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OCR Scan
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KTC3198L
150mA
KTA1266L.
150mA
100mA,
30MHz
100Hz
KTA1266L
KTC3198L
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR KTA1266L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C ᴌExcellent hFE Linearity A : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.). f=(1kHz).
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KTA1266L
-150mA
KTC3198L.
-100mA,
-10mA
30MHz
100Hz,
KTA1266L
KTC3198L
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KTA1266L
Abstract: KTC3198L KTA1266L transistor
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Iife Linearity : hFE 2 =80(Typ.) a t V ce= -6V , Ic=-150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.). f=(lkHz).
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OCR Scan
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KTA1266L
-150mA
KTC3198L.
150mA
-100mA,
-10mA
30MHz
100Hz,
KTA1266L
KTC3198L
KTA1266L transistor
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA1266L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Iif e Linearity : hFE 2 =80(Typ.) at V Ce = -6V, Ic=-150m A • hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.). f=(lkHz).
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OCR Scan
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-150m
KTA1266L
KTC3198L.
150mA
-100mA,
30MHz
100Hz,
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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