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    KTC3199 TRANSISTOR Search Results

    KTC3199 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    KTC3199 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c3199

    Abstract: transistor c3199 C3199 transistor KTC3199GR transistor C3199 GR C3199 gr KTC3199Y C3199 y ktc31 KTC3199 GR
    Text: MCC KTC3199 KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • High DC Current Gain: hFE=70~700


    Original     		PDF KTC3199 KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL KTA1267 C3199 O-92S c3199 transistor c3199 C3199 transistor KTC3199GR transistor C3199 GR C3199 gr KTC3199Y C3199 y ktc31 KTC3199 GR

    c3199

    Abstract: transistor C3199 GR KTC3199GR
    Text: MCC TM Micro Commercial Components KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL KTA1267 C3199 O-92S c3199 transistor C3199 GR KTC3199GR

    c3199

    Abstract: transistor C3199 GR
    Text: MCC TM Micro Commercial Components KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x • • • • NPN General Purpose Application


    Original     		PDF KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL KTA1267 C3199 O-92S c3199 transistor C3199 GR

    transistor c3199

    Abstract: c3199 C3199 transistor transistor C3199 GR KTC3199GR C3199 gr C3199 y KTC3199-BL KTC3199-Y KTC3199-O
    Text: MCC TM Micro Commercial Components KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL KTA1267 C3199 O-92S transistor c3199 C3199 transistor transistor C3199 GR KTC3199GR C3199 gr C3199 y KTC3199-BL

    KTC3199 GR

    Abstract: KTC3199 transistor KTC3199 ktC3199 transistor ktc3199 y ktc31 npn hfe 120-240
    Text: KTC3199 KTC3199 TO-92S TRANSISTOR NPN FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current ICM: 150 mA Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF KTC3199 O-92S 100mA, KTC3199 GR KTC3199 transistor KTC3199 ktC3199 transistor ktc3199 y ktc31 npn hfe 120-240

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES 1996. 5. 30 Revision No : 1 1/3


    Original     		PDF KTC3199

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTC3199 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to KTA1267 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-92S KTC3199 KTA1267 100mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES ϒ⁄Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTC3199.


    Original     		PDF KTA1267 KTC3199. -100mA, -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTA1267 TRANSISTOR PNP 1. EMITTER FEATURES z Excellent hFE Linearity z Complementary to KTC3199 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-92S KTA1267 KTC3199 -100mA -10mA

    KTA1267

    Abstract: KTC3199 KTA1267 GR
    Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). H M G ᴌComplementary to KTC3199.


    Original     		PDF KTA1267 KTC3199. KTA1267 KTC3199 KTA1267 GR

    KTC3199 GR

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ・High DC Current Gain : hFE=70~700. O F ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H M G ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		PDF KTC3199 KTA1267. 100mA, O-92M KTC3199 GR

    transistor KTC3199

    Abstract: KTA1267 KTC3199 transistor KTA1267
    Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G Complementary to KTC3199.


    Original     		PDF KTA1267 KTC3199. transistor KTC3199 KTA1267 KTC3199 transistor KTA1267

    KTA1267

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ϒ⁄Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G ・Complementary to KTC3199.


    Original     		PDF KTA1267 KTC3199. -100mA, -10mA O-92M KTA1267

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors KTC3199 TO-92S TRANSISTOR NPN FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current 150 mA ICM: Collector-base voltage 50 V


    Original     		PDF O-92S KTC3199 O-92S 100mA,

    transistor KTC3199

    Abstract: KTC3199 GR ktC3199 transistor transistor KTA1267 ktc3199 y GR-200 KTC3199 10KOHM KTA1267
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.)


    Original     		PDF KTC3199 KTA1267 O-92S 10mAdc) 10Vdc, 10KOHM) 50Vdc transistor KTC3199 KTC3199 GR ktC3199 transistor transistor KTA1267 ktc3199 y GR-200 KTC3199 10KOHM KTA1267

    KTC3199 GR

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199 KTA1267 O-92S KTC3199 GR

    KTA1267

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199


    Original     		PDF KTA1267 KTC3199 O-92S KTA1267

    transistor KTC3199

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199


    Original     		PDF KTA1267 KTC3199 O-92S transistor KTC3199

    KTC3199 GR

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199 KTA1267 O-92S 100mAdc, 10mAdc) 10Vdc, 10KOHM) KTC3199 GR

    transistor KTC3199

    Abstract: KTC3199 GR ktC3199 transistor KTC3199 GR-200 ktc3199 y
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199 KTA1267 O-92S 10Vdc, 10KOHM) 50Vdc transistor KTC3199 KTC3199 GR ktC3199 transistor KTC3199 GR-200 ktc3199 y

    c3199

    Abstract: transistor c3199 C3199 transistor transistor C3199 GR C3199 gr ktC3199 transistor C3199 y
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199 KTA1267 C3199 O-92S c3199 transistor c3199 C3199 transistor transistor C3199 GR C3199 gr ktC3199 transistor C3199 y

    KTC31

    Abstract: KTC3199 GR ktc3199 y
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199 KTA1267 O-92S 100mAdc, 10mAdc) 10Vdc, 10KOHM) KTC31 KTC3199 GR ktc3199 y

    transistor KTC3199

    Abstract: KTA1267 KTC3199 ktc3199 y
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.).


    OCR Scan     		PDF KTC3199 KTA1267. transistor KTC3199 KTA1267 KTC3199 ktc3199 y

    KTC3199

    Abstract: KTA1267 ktC3199 transistor
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent I lfe Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).


    OCR Scan     		PDF KTC3199 KTA1267. T0-92M KTC3199 KTA1267 ktC3199 transistor