d2424
Abstract: kd2424 KTD2424 marking K DSA001055
Text: SEMICONDUCTOR KTD2424 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D2424 816 No. Item 1 KEC K KEC CORP. 2 Device Name D2424 KTD2424 3 hFE Grade 4 Lot No. 98.06.23 Revision No : Marking Description 8 Year
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KTD2424
O-220IS
D2424
d2424
kd2424
KTD2424
marking K
DSA001055
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KTD2424
Abstract: Darlington Transistor KTB1424 NPN VCBO 80V
Text: SEMICONDUCTOR KTD2424 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000 Min. (VCE=2V, IC=1A) C P S Complementary to KTB1424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
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KTD2424
KTB1424.
O-220IS
KTD2424
Darlington Transistor
KTB1424
NPN VCBO 80V
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KTB1424
Abstract: KTD2424
Text: SEMICONDUCTOR KTD2424 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A FEATURES C DIM A B C D E F P F U ᴌHigh DC Current Gain : hFE=3000 Min. (VCE=2V, IC=1A) E S G B ᴌComplementary to KTB1424. R T L UNIT Collector-Base Voltage
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KTD2424
KTB1424.
O-220IS
KTB1424
KTD2424
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KTB1424
Abstract: Darlington Transistor KTD2424
Text: SEMICONDUCTOR KTB1424 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000 Min. (VCE=-2V, IC=-1A) C P S Complementary to KTD2424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
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KTB1424
KTD2424.
O-220IS
-10mA,
-30mA
KTB1424
Darlington Transistor
KTD2424
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTD2424 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000 Min. (VCE=2V, IC=1A) C P S Complementary to KTB1424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
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KTD2424
KTB1424.
O-220IS
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB1424 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000 Min. (VCE=-2V, IC=-1A) C P S Complementary to KTD2424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
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KTB1424
KTD2424.
O-220IS
-10mA,
-30mA
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TO-220IS
Abstract: KTB1424 KTD2424
Text: SEMICONDUCTOR KTB1424 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A FEATURES C DIM A B C D E F P F U ᴌHigh DC Current Gain : hFE=3000 Min. (VCE=-2V, IC=-1A) E S G B ᴌComplementary to KTD2424. R T L UNIT Collector-Base Voltage
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KTB1424
KTD2424.
O-220IS
-10mA,
-30mA
TO-220IS
KTB1424
KTD2424
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power
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SN431)
SUN0550F/D
O-220AB-3L
O-220F-3L
O-220F-4SL
DIP-14
DIP-20
DIP-18
S78DM12Q
Sf20d400
s78dM12
BA5810
sn7905
SF5A400
transistor AE code PNP smd
sf20a300
SF10A300
SF10D300
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES • High DC Current Gain : hFE=3000 Min. • Complementary to KTD2424. (V ce = -2 V , IC=-1A) MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT
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KTB1424
KTD2424.
-10mA,
-30mA
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Korea Electronics TRANSISTOR
Abstract: KTB1424 KTD2424
Text: K E C SEMICONDUCTOR KTD2424 TECHNICAL D A TA EPITAXIAL PLANAR NPN TRANSISTOR KOREA ELECTRONICS CO.,LTD. GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES • High DC Current Gain : hFE=3000 Min. (VCe=2V, Ic=1A) • Complementary to KTB1424. MAXIMUM RATINGS (Ta=25°C)
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KTD2424
KTB1424.
220IS
Korea Electronics TRANSISTOR
KTB1424
KTD2424
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KTB1424
Abstract: KTD2424
Text: SEMICONDUCTOR TECHNICAL DATA KTD2424 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES • High DC Current Gain : hFE=3000 Min. • Complementary to KTB1424. IC=1A) (V ce =2V, MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT CHARACTERISTIC
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KTD2424
KTB1424.
220IS
KTB1424
KTD2424
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KTB1424
Abstract: KTD2424
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES • High DC Current Gain : hFE=3000 Min. (VCe =-2V , Ic=-1A) • Complementary to KTD2424. MAXIMUM RATINGS (Ta=25°C)
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KTB1424
KTD2424.
220IS
-10mA,
-30mA
KTB1424
KTD2424
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