Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2008. 8. 29 Revision No : 5 1/4
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KTN2907U/AU
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2222a
Abstract: KTN2907AU KTN2907U
Text: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES ・Low Leakage Current B M : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. M D 3 1 G ・Low Saturation Voltage J A 2 : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.
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KTN2907U/AU
-150mA,
-15mA.
KTN2222U/2222AU.
-50nA
2222a
KTN2907AU
KTN2907U
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KTN2907U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTN2907U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZD 1 2 Item Marking Description Device Mark ZD KTN2907U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTN2907U
KTN2907U
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KTN2907AU
Abstract: KTN2907U
Text: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES ・Low Leakage Current M : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. B M D 3 1 G ・Low Saturation Voltage J A 2 : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.
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KTN2907U/AU
-150mA,
-15mA.
KTN2222U/2222AU.
-50nA
KTN2907U
KTN2907AU
KTN2907AU
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KTN2222U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D 3 1 G Low Saturation Voltage J A 2 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
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KTN2222U/AU
150mA,
KTN2907U/2907AU.
KTN2222U
KTN2222AU
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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KTN2222AU
Abstract: KTN2222U
Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ・Low Leakage Current D A 3 1 G ・Low Saturation Voltage J 2 : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
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KTN2222U/AU
150mA,
KTN2907U/2907AU.
KTN2222AU
KTN2222U
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KTN2222AU
Abstract: KTN2222U 1k31
Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ᴌLow Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D 3 1 G ᴌLow Saturation Voltage J A 2 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
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KTN2222U/AU
150mA,
KTN2907U/2907AU.
KTN2222U
KTN2222AU
KTN2222AU
1k31
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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ktn2222u
Abstract: KTN2222AU
Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
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150mA,
KTN2907U/2907AU.
KTN2222U/AU
KTN2222U
KTN2222AU
150mA
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KTN2369AU
Abstract: KTN2369U KTN2907AU KTN2907U
Text: SEMICONDUCTOR TECHNICAL DATA KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, Veb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.
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KTN2907U/AU
-50nA
-150mA,
-15mA.
KTN2222U/2222AU.
KTN2907U
KTN2907AU
KTN2369AU
KTN2369U
KTN2907AU
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KTN2222AU
Abstract: KTN2222U FC100H
Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c E x - 1 0 n A M a x . ; V c e = 6 0 V , V e b (o ff ) - 3 V .
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KTN2222U/AU
150mA,
KTN2907U/2907AU.
KTN2222U
KTN2222AU
KTN2222AU
FC100H
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DA TA KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x-10nA M ax. ; V ce-6 0 V , V eb(off)-3V . • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150m A , lB=15mA.
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KTN2222U/AU
x-10nA
KTN2907U/2907AU.
KTN2222U
KTN2222AU
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KTN2222AU
Abstract: KTN2222U
Text: SEMICONDUCTOR TECHNICAL DATA KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x-10nA M ax. ; V ce-6 0 V , V eb(off)-3V . • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150m A , lB=15mA.
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KTN2222U/AU
150mA,
KTN2907U/2907AU.
KTN2222U
KTN2222AU
10X8X0
KTN2222AU
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