KTX2 Search Results

KTX212E

Abstract: MARKING BG bg marking
Contextual Info: SEMICONDUCTOR KTX212E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BG 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BG KTX212E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KTX201E

Contextual Info: SEMICONDUCTOR KTX201E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B FEATURES B1 Including two devices in TESV. C 1 2 DIM A 5 A1 B D A Reduce a quantity of parts and manufacturing process. A1 Simplify circuit design. C Thin Extreme Super mini type with 5 pin

KTX212U

Contextual Info: SEMICONDUCTOR KTX212U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BG 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BG KTX212U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KTX211E

Abstract: BFQ11
Contextual Info: SEMICONDUCTOR KTX211E TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 A1 Thin Extreme Super mini type with 6 leads. C

KTX201E

Contextual Info: SEMICONDUCTOR KTX201E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B FEATURES B1 ᴌIncluding two devices in TESV. C 2 DIM A 5 A1 B D A 1 A1 ᴌReduce a quantity of parts and manufacturing process. C Thin Extreme Super mini type with 5 pin

Contextual Info: SEMICONDUCTOR KTX211U TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C ・With Built-in bias resistors. A1

KTX216U

Contextual Info: SEMICONDUCTOR KTX216U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C ・With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

433 mhz rf transmitter pcb layout

Abstract: RX2A Radiometrix application note RX2A-433-10 KDEC-433-000 KRX416-000-DIL KTX2-433 433 mhz rf RECEIVER pcb layout 4 pin 433 mhz rf module 845 MOTHERBOARD CIRCUIT diagram
Contextual Info: W E N Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Issue 1, 05 March 2008 Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233 KTX2 UHF FM Code-Hopping Data Transmitter Module The KTX2 is a miniature PCB mounting code-hopping UHF radio

KTX201U

Contextual Info: SEMICONDUCTOR KTX201U TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES B B1 ・Including two devices in USV. Ultra Super mini type with 5 leads 1 5 A 2 C ・Reduce a quantity of parts and manufacturing process A1 C

KTX212U

Contextual Info: SEMICONDUCTOR KTX212U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C ・With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

KTX212E

Contextual Info: SEMICONDUCTOR KTX212E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 A1 Thin Extreme Super mini type with 6 leads. C Including two devices in TES6.

KTX213E

Contextual Info: SEMICONDUCTOR KTX213E TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 A1 Thin Extreme Super mini type with 6 leads. C

KTX215E

Contextual Info: SEMICONDUCTOR KTX215E TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 A1 Thin Extreme Super mini type with 6 leads. C

MARKING bj

Abstract: KTX215U
Contextual Info: SEMICONDUCTOR KTX215U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BJ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BJ KTX215U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KTX213U

Abstract: marking BH
Contextual Info: SEMICONDUCTOR KTX213U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BH 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BH KTX213U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

marking i2

Abstract: KTX214E
Contextual Info: SEMICONDUCTOR KTX214E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BI 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BI KTX214E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KTX211E

Contextual Info: SEMICONDUCTOR KTX211E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BF KTX211E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: SEMICONDUCTOR KTX213U TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

Contextual Info: SEMICONDUCTOR KTX211U TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

Contextual Info: SEMICONDUCTOR KTX212U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C ・With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

Contextual Info: SEMICONDUCTOR KTX214E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ・With Built-in bias resistors. 1 6 2 5 3 4 A1 Thin Extreme Super mini type with 6 leads. C ・Including two devices in TES6.

Contextual Info: SEMICONDUCTOR KTX214U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C ・With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

KTX211E

Contextual Info: SEMICONDUCTOR KTX211E TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ・With Built-in bias resistors. 1 6 2 5 3 4 D ・Simplify circuit design. ・Reduce a quantity of parts and manufacturing process.

Contextual Info: SEM ICONDUCTOR KTX215E TE CHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including two devices in TES6. Thin Extreme Super mini type with 6 leads. • With Built-in bias resistors.