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    KU BAND LIMITER Search Results

    KU BAND LIMITER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HXR4101A-DNT Renesas Electronics Corporation 4/11.3Gbps Dual Band Limiting TIA Visit Renesas Electronics Corporation
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    GCM033C70J104KE02J Murata Manufacturing Co Ltd 0201 (0603M) X7S (EIA) 6.3Vdc 0.1μF±10% Visit Murata Manufacturing Co Ltd
    GRT155R61A106ME13J Murata Manufacturing Co Ltd 0402 (1005M) X5R (EIA) 10Vdc 10μF±20% Visit Murata Manufacturing Co Ltd
    GRT21BD72A225KE13K Murata Manufacturing Co Ltd 0805 (2012M) X7T (EIA) 100Vdc 2.2μF±10% Visit Murata Manufacturing Co Ltd

    KU BAND LIMITER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    receiver module mtbf

    Abstract: rf module mtbf MIL-I-42508 double down conversion receiver Comstron MIL-STD-810C jas-39 LANDING Ku band limiter receiver mtbf
    Text: Precision Systems For Critical Applications COMSTRON FEATURES CS-1540 • Ku Band MICROWAVE LANDING RECEIVER • Built-In-Test • High reliability • Flight Qualified Part of TILS II Microwave Landing System DESCRIPTION The Model CS-1540 Ku Band Microwave Landing


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    CS-1540 CS-1540 MIL-STD-810B, MIL-STD-810C, MIL-STD-461, MIL-Q-9858 MIL-I-42508 receiver module mtbf rf module mtbf MIL-I-42508 double down conversion receiver Comstron MIL-STD-810C jas-39 LANDING Ku band limiter receiver mtbf PDF

    WR284* ISOLATOR

    Abstract: MS3116E-10-6S WR340 flange dimensions
    Text: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS


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    2002/96/EC 2002/96/EC C-39B WR284* ISOLATOR MS3116E-10-6S WR340 flange dimensions PDF

    Ku band limiter

    Abstract: GC4702 RF limiter PIN diode band Limiter GC4700 pin diode limiter GC4701 GC PIN DIODE MICROSEMI 4741 attenuator limiter
    Text: TOC Control Devices LIMITER DIODES DESCRIPTION APPLICATIONS The GC4700 series diodes are specially processed PIN diodes designed for use in passive or active limiters at frequencies through Ku band. A diode limiter is a power-sensitive variable attenuator


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    GC4700 GC4721 GC4701, Ku band limiter GC4702 RF limiter PIN diode band Limiter pin diode limiter GC4701 GC PIN DIODE MICROSEMI 4741 attenuator limiter PDF

    VLU1744

    Abstract: No abstract text available
    Text: Receiver Protectors VLU1744 Diode Limiter Description: Small, lightweight Ku-Band diode limiter in reduced height waveguide. Features: • • • • • • • • • 150 Sohier Road Beverly, Massachusetts 01915 cp Beverly Microwave Division Freq. Range: 13.5 – 14.5 GHz


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    VLU1744 PDF

    VDU1690

    Abstract: Receiver Protectors Ku band limiter tr limiter band Limiter limiter
    Text: Receiver Protectors VDU1690 Pre-TR,TR Limiter Description: High power Ku-Band Pre-TR, TR Limiter. Features: • Frequency: 14.6 - 15.2 GHz · Peak Power: Overload: 250 kW Normal: 25 kW · Duty Cycle: 0.0029 · Pulsewidth: 1.0 mSec · Insertion Loss: 1.2 dB max


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    VDU1690 Receiver Protectors Ku band limiter tr limiter band Limiter limiter PDF

    GC4731

    Abstract: Ku band limiter gc4700 RF limiter PIN diode GC4732 band Limiter GC4711 Limiters PIN diode Limiter GC4702
    Text: Control Devices LIMITER DIODES DESCRIPTION The GC4700 series diodes are specially processed PIN diodes designed for use in passive or active limiters at frequencies through Ku band. Twelve categories of devices are offered for flexibility in design of low lower Vb, fastest turn-on time , medium


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    GC4700 GC4731 GC4732 GC4741 GC4742 GC4731 Ku band limiter RF limiter PIN diode GC4732 band Limiter GC4711 Limiters PIN diode Limiter GC4702 PDF

    ka band lna

    Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
    Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for


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    PDF

    TGA2519-SG

    Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
    Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m


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    AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519 PDF

    DMF2190

    Abstract: DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820
    Text: Silicon Beam–Lead Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages SPC Controlled Wafer Fabrication Description Alpha beam–lead and chip Schottky barrier mixer


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    015mm) 005mm) DMF2190 DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820 PDF

    Untitled

    Abstract: No abstract text available
    Text: Control Devices LIMITER DIODES DESCRIPTION APPLICATIONS The GC4700 series diodes are specially processed PIN diodes designed for use in passive or active limiters at frequencies through Ku band. A diode limiter is a power-sensitive variable attenuator that u ses the non-linear properties of the diode to pro­


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    GC4700 MA01851 PDF

    SFD1001

    Abstract: wj sfd1001 ICS1001 "ku band" amplifier SME1400 E9001 SR1019 SME1400B-10 icl1001
    Text: PRODUCT SELECTION GUIDE: By Specifications RF Products: <2.5 GHz AMPLIFIERS Frequency Small Gain Noise Power Output Range Signal Gain Flatness Figure at 1 dB Compression Intercept VSW R MHz (dB) (±dB) (dB) (dBm) Point (dBm) (i/O) Volts mA Type AH1 450-3000


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    A3010-1 SA1032 OT-89 J1-10 J1-13 J2-10 J2-13 J3-10 J3-13 E900-17 SFD1001 wj sfd1001 ICS1001 "ku band" amplifier SME1400 E9001 SR1019 SME1400B-10 icl1001 PDF

    DMG-6414A

    Abstract: DMF3068 DMF4384 diodos led DMH6570 dmj4317 DMF3243 DMF5847 DMJ4708 dmf5818
    Text: 0585443 ALPHA ALPHA ~Ü3 DSflSMM3'DGGG3Sl S | ~ D J‘ - Q ' 7 —0 1 Silicon Beam-Lead and Chip Schottky Barrier INC/ SEMICONDUCTOR Mixer Diodes \ n i - ' i - =:- V] Features :IT • Ideal for MIC • Low 1/f Noise • Low Intermodulation Distortion • Low Turn On


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    PDF

    DMJ3086

    Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
    Text: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages


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    DMV3946-000 DMB4500-000 DMB4501-000 DMB6780-000 DMB3000-000 DMB6782-000 DMB3001-000 DMB6781-000 DMB3003-000 DMB3004-000 DMJ3086 DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000 PDF

    DMJ4747

    Abstract: DMJ4708 DMJ3102-000 DMF-5845 DMJ3086 DMF6554-000 DMF2190-000 DMJ4317-000 dme3013-000
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes Features • ■ ' ±A Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages v v * uX ■ > * ' I < ^ p»iL VHM Description RF parameters, capacitance and breakdown voltage


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    DMB2853-000 DMB2854-000 DMB2855-000 DMB2856-000 DMB6780-000 DMB6782-000 DMB3000-000 DMB3001-000 DMB6781-000 DMB3003-000 DMJ4747 DMJ4708 DMJ3102-000 DMF-5845 DMJ3086 DMF6554-000 DMF2190-000 DMJ4317-000 dme3013-000 PDF

    404-011

    Abstract: dmb2856 404002
    Text: Silicon Beam-Lead and Chip EHAlpha Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fab Description


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    DMB2853 DMB2854 DMB2855 DMB2856 404-011 404002 PDF

    DMJ4317

    Abstract: DMJ4708 DMF5847 DME3256 DMF3383 DMJ6575 ka-band mixer DME3040 DMF5848 diode ring mixer
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ËMlph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


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    l2-34 AS006R2-10 AK002M4-31 AS004L1-08 AS406M2-01 AK004L1â AS004L1â AS406R2-01 AK004M1-11 AS004L2-11 DMJ4317 DMJ4708 DMF5847 DME3256 DMF3383 DMJ6575 ka-band mixer DME3040 DMF5848 diode ring mixer PDF

    dmj4317

    Abstract: No abstract text available
    Text: Silicon Beam-Lead and Chip EDAIphi Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


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    DMF3242 DME4399 DME3346 DME3974 DMJ4708 DMJ4394 DMJ3112 DMF3975 DME3978 DMF3179 dmj4317 PDF

    DMF5848

    Abstract: kaba ka-band mixer
    Text: Silicon Beam-Lead and Chip 0 3 Alpha Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


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    DMF3242 DME4399 DMJ4708 DMJ3091 DMJ3961 DMF3179 DME3346 DMJ4394 DMF3972 DME3974 DMF5848 kaba ka-band mixer PDF

    tl377

    Abstract: Ku band limiter TL374 TL371 TL392 TL368A tr-tube
    Text: TR-Tubes W ith Limiter Igniteriess Type 7ÿ"A,l~ Jr —i> X 'W ) - Ï - ? » * w<mT% '• 'r7 — (MHz) Transmitter Power (kW max.) Flat Leakage Power (mW max.) TL382 2700-2900 100 20 TL389 2700-2900 200 20 Type Frequency Spike Leakage Energy (erg max.)


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    TL382 TL389 TL378 TL399 TL368D TL368A TL368C TL392 TL374 TL377 Ku band limiter TL371 tr-tube PDF

    A beam lead ring quad of four Schottky diodes

    Abstract: No abstract text available
    Text: Silicon Beam-Lead Schottky Barrier Mixer Diodes EQA lpha DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description


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    015mm) 005mm) A beam lead ring quad of four Schottky diodes PDF

    e327425

    Abstract: F2138-000 DMJ2088-255
    Text: Silicon Beam-Lead ESAlpha Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features • Ideal for M IC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SP C Controlled W afer Fabrication ^ > > p -


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    01Omm) 015mm) 005mm) e327425 F2138-000 DMJ2088-255 PDF

    e3055

    Abstract: j4313 F2822 j2833 F3373 J2303 E3009 F2189 F4734 me2206
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description


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    F3179 DMJ3961 F3242 E4399 J4708 E3346 J4394 F3972 E3974 DMJ3112 e3055 j4313 F2822 j2833 F3373 J2303 E3009 F2189 F4734 me2206 PDF

    dmj4317

    Abstract: DMF5848 DME3256 DME3040 ka-band mixer DM228 DME3006 DME3124 dmf5848 diode DMF2820
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes EHAIph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


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    AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AK006L1-00 AS004M2-08 dmj4317 DMF5848 DME3256 DME3040 ka-band mixer DM228 DME3006 DME3124 dmf5848 diode DMF2820 PDF

    DME2857-234

    Abstract: F2011 F2012 ka band Limiter ka-band mixer DME2127-250 DME2859-000 DME2859-234 DME2957-000 DMF2820-000
    Text: Silicon Beam-Lead Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description Alpha beam -lead and chip Schottky barrier mixer


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    015mm) 005mm) DME2857-234 F2011 F2012 ka band Limiter ka-band mixer DME2127-250 DME2859-000 DME2859-234 DME2957-000 DMF2820-000 PDF