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    L 31A Search Results

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    L 31A Price and Stock

    Samsung Electro-Mechanics CL31A476MQHNNWE

    CAP CER 47UF 6.3V X5R 1206
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    DigiKey CL31A476MQHNNWE Reel 916,000 2,000
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    Samsung Electro-Mechanics CL31A226KPHNNNE

    CAP CER 22UF 10V X5R 1206
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    DigiKey CL31A226KPHNNNE Reel 296,000 2,000
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    Avnet Americas CL31A226KPHNNNE Reel 286,000 20 Weeks 2,000
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    Newark CL31A226KPHNNNE Cut Tape 34,097 1
    • 1 $0.058
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    CL31A226KPHNNNE Reel 2,000 2,000
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    Avnet Asia CL31A226KPHNNNE 20 Weeks 20,000
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    Samsung Electro-Mechanics CL31A226KOCLFNC

    CAP CER 22UF 16V X5R 1206
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    DigiKey CL31A226KOCLFNC Digi-Reel 80,158 1
    • 1 $0.51
    • 10 $0.304
    • 100 $0.1963
    • 1000 $0.1393
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    CL31A226KOCLFNC Cut Tape 80,158 1
    • 1 $0.51
    • 10 $0.304
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    CL31A226KOCLFNC Reel 80,000 4,000
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    Avnet Americas CL31A226KOCLFNC Reel 20,000 20 Weeks 4,000
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    Samsung Electro-Mechanics CL31A225KB9LNNC

    CAP CER 2.2UF 50V X5R 1206
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    DigiKey CL31A225KB9LNNC Cut Tape 74,020 1
    • 1 $0.22
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    CL31A225KB9LNNC Digi-Reel 74,020 1
    • 1 $0.22
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    • 100 $0.0773
    • 1000 $0.05196
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    CL31A225KB9LNNC Reel 72,000 4,000
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    Avnet Americas CL31A225KB9LNNC Reel 12,000 20 Weeks 4,000
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    Samsung Electro-Mechanics CL31A106MQHNNNE

    CAP CER 10UF 6.3V X5R 1206
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    DigiKey CL31A106MQHNNNE Digi-Reel 4,707 1
    • 1 $0.17
    • 10 $0.098
    • 100 $0.0599
    • 1000 $0.03965
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    CL31A106MQHNNNE Cut Tape 4,707 1
    • 1 $0.17
    • 10 $0.098
    • 100 $0.0599
    • 1000 $0.03965
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    CL31A106MQHNNNE Reel 4,000 2,000
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    L 31A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFR5305

    Abstract: IRFU5305 63 marking code diode
    Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) IRFU120 IRFR/U5305PbF O-252AA) EIA-481 EIA-541. IRFR5305 IRFU5305 63 marking code diode PDF

    IRF Power MOSFET code marking

    Abstract: IRFR5305 IRFU5305 IRF 100A IRFR5305PBF
    Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) AN-994. IRFR/U5305PbF O-251AA) IRF Power MOSFET code marking IRFR5305 IRFU5305 IRF 100A IRFR5305PBF PDF

    IRFR5305

    Abstract: IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
    Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) O-252AA) EIA-481 EIA-541. EIA-481. IRFR5305 IRFR P-Channel MOSFET IRFU5305PbF IRFU5305 PDF

    IRFR5305

    Abstract: IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
    Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) moun16 EIA-481 EIA-541. EIA-481. IRFR5305 IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) EIA-481 EIA-541. EIA-481. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


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    IRFIZ44NPbF O-220 I840G PDF

    IRFz44n equivalent

    Abstract: k3432 IRFZ44N 12v input 55v output using irfz44n circuit
    Text: PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


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    IRFIZ44NPbF O-220 I840G IRFz44n equivalent k3432 IRFZ44N 12v input 55v output using irfz44n circuit PDF

    IRFz44n equivalent

    Abstract: 12v input 55v output using irfz44n circuit IRFZ44N for irfz44n
    Text: PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


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    IRFIZ44NPbF O-220 I840G IRFz44n equivalent 12v input 55v output using irfz44n circuit IRFZ44N for irfz44n PDF

    IRF5305

    Abstract: 55V MOSFET P-Channel k 524 ir
    Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    91385B IRF5305 O-220 IRF5305 55V MOSFET P-Channel k 524 ir PDF

    EK 110

    Abstract: IRF5305
    Text: PD - 9.1385A IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    IRF5305 O-220 EK 110 IRF5305 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    91385B IRF5305 O-220 PDF

    IRF5305

    Abstract: No abstract text available
    Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    91385B IRF5305 O-220 IRF5305 PDF

    IRF5305

    Abstract: EPF12 borg
    Text: PD - 901385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    901385B IRF5305 O-220 IRF5305 EPF12 borg PDF

    IRFR5305

    Abstract: IRFU5305 IRF5305
    Text: PD - 91402A IRFR/U5305 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize


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    1402A IRFR/U5305 IRFR5305) IRFU5305) IRFR5305 IRFU5305 IRF5305 PDF

    IRFR5305

    Abstract: IRFU5305
    Text: PD - 91402A IRFR/U5305 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize


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    1402A IRFR/U5305 IRFR5305) IRFU5305) i2-7105 IRFR5305 IRFU5305 PDF

    IRFR5305

    Abstract: No abstract text available
    Text: IRFR/U5305 l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S D-Pak IRFR5305 I-Pak IRFU5305 Description The D-Pak is designed for surface mounting using vapor


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    IRFR/U5305 IRFR5305) IRFU5305) IRFR5305 IRFU5305 O-251AA) O-252AA) IRFR5305 PDF

    7912A

    Abstract: irfp31n50 IRFP31N50L 152x 247Package
    Text: PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply SMPS l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.15Ω 31A l ZVS and High Frequency Circuit l PWM Inverters Benefits


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    IRFP31N50L O-247AC 7912A irfp31n50 IRFP31N50L 152x 247Package PDF

    B1370

    Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
    Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    1403B IRFIZ44N O-220 B1370 R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N PDF

    IRFz44n equivalent

    Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
    Text: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    IRFIZ44N O-220 IRFz44n equivalent IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630 PDF

    IRFz44n equivalent

    Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
    Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    1403B IRFIZ44N O-220 IRFz44n equivalent datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1403B IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    1403B IRFIZ44N O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l l l l l l l l l l Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to


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    AUIRLI2505 PDF

    IRF8302M

    Abstract: No abstract text available
    Text: IRF8302MPbF l l l l l l l l l l l RoHs Compliant and Halogen-Free  HEXFET Power MOSFET plus Schottky Diode ‚ Integrated Monolithic Schottky Diode Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 


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    IRF8302MPbF IRF8302M PDF

    l33a

    Abstract: l69b L37B l37a L33B L68B L33A SMD l71b l47B L120B
    Text: Mechanical Outlines - LED C A SE L-18b C A SE L-19b -01.8 0.07 -01.8(0.07) 04.0(0.16) 0.75(0.03) max athode athode -2.54(0.1) -2.54(0.1) C A SE L-22b C A SE L-30b -05.0(0.2) 03.55 (0.14) athode -2.54(0.1) -2.54(0.1) C A SE L-31a L-31b C A SE L-32a L-32b 02.94


    OCR Scan
    L-18b L-19b L-22b L-30b L-31a L-31b L-32a L-32b L-31b l33a l69b L37B l37a L33B L68B L33A SMD l71b l47B L120B PDF