Untitled
Abstract: No abstract text available
Text: PD - 97273C IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
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97273C
IRF6712SPbF
IRF6712STRPbF
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Untitled
Abstract: No abstract text available
Text: PD - 97273B IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
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97273B
IRF6712SPbF
IRF6712STRPbF
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Untitled
Abstract: No abstract text available
Text: PD - 97273B IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
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97273B
IRF6712SPbF
IRF6712STRPbF
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Untitled
Abstract: No abstract text available
Text: PD - 97273E IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
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97273E
IRF6712SPbF
IRF6712STRPbF
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Untitled
Abstract: No abstract text available
Text: PD - 97274 IRF6716MPbF IRF6716MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l l l l l l l l l l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 mm) 25V max ±20V max 1.2mΩ@10V 2.0mΩ@ 4.5V
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IRF6716MPbF
IRF6716MTRPbF
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IRF7862
Abstract: IRF7862PBF EIA-541
Text: PD - 97275A IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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7275A
IRF7862PbF
IRF7862
IRF7862PBF
EIA-541
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IRF 810
Abstract: EIA-541
Text: PD - 97275 IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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IRF7862PbF
EIA-481
EIA-541.
IRF 810
EIA-541
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EIA-541
Abstract: IRF7862PBF TT5 marking
Text: PD - 97275A IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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7275A
IRF7862PbF
EIA-541
IRF7862PBF
TT5 marking
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EIA-541
Abstract: No abstract text available
Text: PD - 97275A IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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7275A
IRF7862PbF
EIA-481
EIA-541.
EIA-541
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current rating for MQ 6
Abstract: No abstract text available
Text: PD - 97273 IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET RoHS Compliant Containing No Lead and Bromide l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters
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IRF6712SPbF
IRF6712STRPbF
current rating for MQ 6
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MOSFET IRF 941
Abstract: No abstract text available
Text: PD - 97278A IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits
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7278A
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
EIA-418.
MOSFET IRF 941
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IRF 450 MOSFET
Abstract: AN-994 IRFB4410Z IRFB4410ZPBF irfs4410z marking 58A
Text: PD - 97278 IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits VDSS RDS on typ.
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IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
EIA-418.
IRF 450 MOSFET
AN-994
IRFB4410Z
IRFB4410ZPBF
irfs4410z
marking 58A
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IRFB4410ZPBF
Abstract: Sl4410 AN-994 mosfet irf 150
Text: PD - 97278C IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits
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97278C
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
EIA-418.
IRFB4410ZPBF
Sl4410
AN-994
mosfet irf 150
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SL4410
Abstract: No abstract text available
Text: PD - 97278D IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits
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97278D
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
EIA-418.
SL4410
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AN-994
Abstract: No abstract text available
Text: PD - 97278B IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits
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97278B
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
Maximum73)
AN-994
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Untitled
Abstract: No abstract text available
Text: PD - 97274C IRF6716MPbF IRF6716MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS l Dual Sided Cooling Compatible 25V max ±20V max l Ultra Low Package Inductance
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97274C
IRF6716MPbF
IRF6716MTRPbF
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Untitled
Abstract: No abstract text available
Text: PD - 97274C IRF6716MPbF IRF6716MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS l Dual Sided Cooling Compatible 25V max ±20V max l Ultra Low Package Inductance
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97274C
IRF6716MPbF
IRF6716MTRPbF
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IRF 810
Abstract: IRF7862
Text: PD - 97275B IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS RDS on max 3.3m:@VGS = 10V 30V Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance
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97275B
IRF7862PbF
IRF 810
IRF7862
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9727A
Abstract: HA-A870 HA-A879
Text: C RY S TA L C L O C K O S C I L L ATO R S Data Sheet 9727A Rev. J PECL Compatible HA-A870 Series Description The HA-A870 Series of quartz crystal oscillators provide MECL 10K and 10KH series compatible signals in industry standard four-pin DIP hermetic packages.
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HA-A870
range--18
20ppm
HA-A879
9727A
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Untitled
Abstract: No abstract text available
Text: PD - 97273F IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHS Compliant and Halogen Free VDSS l Low Profile (<0.7 mm) VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 25V max ±20V max 3.8mΩ@ 10V 6.7mΩ@ 4.5V
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97273F
IRF6712SPbF
IRF6712STRPbF
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Untitled
Abstract: No abstract text available
Text: PD - 97273F IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHS Compliant and Halogen Free VDSS l Low Profile (<0.7 mm) VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 25V max ±20V max 3.8mΩ@ 10V 6.7mΩ@ 4.5V
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97273F
IRF6712SPbF
IRF6712STRPbF
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Untitled
Abstract: No abstract text available
Text: PD - 97275B IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS RDS on max 3.3m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 4.5V VGS
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97275B
IRF7862PbF
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era85 diode
Abstract: ERA85-009 A328 diode L2.06
Text: ' t y y ÿ ' f # —K : O utline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft oi 1 J» 1 9 1 > ■K High reliability by planer design. • Marking ? 3 W :ft5m m b'7f S KM A «TBI 1 0 f l- 0 . l l f l - N . 1 2 Æ -D
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OCR Scan
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ERA85-009
era85 diode
A328
diode L2.06
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1MBH60D-090A
Abstract: 1MBH60D transistor z5t 150-TC1
Text: 1MBH60D-090A IGBT I : Outline Drawings in s u l a t e d g a t e b ip o l a r t r a n s is t o r Features • High Speed Switching • flfcliiSWE Low Saturation Voltage • M itt M O s y —HUifc High Impedance Gate • ' j ' S S ' S m a l l Package • £ )& : Applications
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OCR Scan
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1MBH60D-090A
50/fS}
1MBH60D-090A
1MBH60D
transistor z5t
150-TC1
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