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    L TO KU BAND AMPLIFIERS Search Results

    L TO KU BAND AMPLIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    UPC4570GR(20)-9LG-E1-A Renesas Electronics Corporation Ultra Low-Noise, High-speed, Wide Band, Dual Operational Amplifier Visit Renesas Electronics Corporation
    UPC844GR(20)-9LG-E1-A Renesas Electronics Corporation Single Power Supply, High-speed, Wide Band, Quad Operational Amplifier Visit Renesas Electronics Corporation

    L TO KU BAND AMPLIFIERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Compact Ku-Band Hub-mount SSPB 20W to 80W SSPB-S2100KTM series Features •            Converts L-Band to Ku-Band see table A Integrated amplifier with an output power of 20W to 80W (see table A) Phase-locked oscillator to external 10MHz reference


    Original     		PDF SSPB-S2100KTM 10MHz SSPB-S2100K SSPB-S2100K MS3102R16-10PX PB-SSPBm-Ku-20-80-13150

    MGF4919G

    Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically


    Original     		PDF MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223

    low noise hemt transistor

    Abstract: MGF4714CP InGaAs HEMT mitsubishi
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT High Electron Mobility OUTLINE DRAWING Unit:millimeters (0.6 Transistor) is designed for use in L to Ku band amplifiers. 1 The plastic mold package offer high cost performance, and has a


    Original     		PDF MGF4714CP MGF4714CP 12GHz low noise hemt transistor InGaAs HEMT mitsubishi

    NE76038

    Abstract: NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 3.5 • LOW COST PLASTIC PACKAGING


    Original     		PDF NE76038 NE76038 NE76038-T1 24-Hour NE76038-T1

    30374

    Abstract: NE76038 NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE76038 NE76038 NE76038-T1 24-Hour 30374 NE76038-T1

    SEMP 690

    Abstract: No abstract text available
    Text: SPG-14 SATCOM PRODUCT GUIDE CONTENTS Attenuators. 3 Amplifiers. 4-5


    Original     		PDF SPG-14 SEMP 690

    TGA2519-SG

    Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
    Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m


    Original     		PDF AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519

    Untitled

    Abstract: No abstract text available
    Text: Dual Band X & Ku SSPA X 125W to 180W Ku 125W to 160W SSPA-XK Features •          Dual-band, linearity and efficiency High gain Microprocessor based monitor and control Monitoring of all key operating parameters Built-in forward and reflected power monitors


    Original     		PDF RS232 RS422/485 PB-SSPA-XK-13150

    J306

    Abstract: CR303 pe 564.1 busy tone detector Z304 A1 GNC Z301B Ho56 dgkp Z302A
    Text: 241&7%6 52'%+ +%#6+10 < 1 8$+5 &#6# 27/2 +06' 4#6'& #(' 9+6* ('#674'5 &GXKEG &CVC 2WOR #(' 5RGGF /*\ < $KV  ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ +PVGITCVGF Combined data pump and Analog Front-End (AFE) ‡ ‡ Full duplex data modem throughput to 2400 bps


    Original     		PDF 22bis, 21/Bell 22/Bell 22bis Z02201 82NCUVKE R4078, J306 CR303 pe 564.1 busy tone detector Z304 A1 GNC Z301B Ho56 dgkp Z302A

    TGS 822

    Abstract: No abstract text available
    Text: < 8$+5 &#6# 27/2 9+6* +06' 4#6'& # ' 241&7%6 52'%+(+%#6+10 25/1& <K.1) 914.&9+&' *'#&37#46'45  ' *#/+.610 #8'07' %#/2$'. %#  6'.'2*10'  (#:  +06'40'6 *662999<+.1)%1/ 1999 by ZiLOG, Inc. All rights reserved. Information in this publication concerning the devices, applications, or technology described is intended to suggest possible uses and may be superseded. ZiLOG, INC.


    Original     		PDF Z02201 82NCUVKE R4078, TGS 822

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGF4919

    Abstract: MGF4919G
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The


    OCR Scan     		PDF MGF491xG MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G MGF4919

    GM 2310 A

    Abstract: low noise hemt transistor MGF4714CP L to Ku GAAS L to Ku band amplifiers transistor GC 40103 HEMT
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:m illim eters Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a


    OCR Scan     		PDF MGF4714CP MGF4714CP 12GHz GD-22 GM 2310 A low noise hemt transistor L to Ku GAAS L to Ku band amplifiers transistor GC 40103 HEMT

    c 1181 H

    Abstract: lD-10mA
    Text: MITSUBISHI SEMICONDUCTOR GaAs F ET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION T he M GF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:millimeters Mobility T ransistor) is designed for use in L to Ku band amplifiers. T he plastic mold package offer high cost performance, and has a


    OCR Scan     		PDF MGF4714CP GF4714CP GD-22 c 1181 H lD-10mA

    MGF1323

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.


    OCR Scan     		PDF MGF1323 MGF1323, 13dBm 30rnA

    NE76038

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND Ga As MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 3.5 21 Ga 18 3 Lg = 0.3 im, Wg = 280 )im


    OCR Scan     		PDF NE76038 NE76038 NE76038-T1 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos - 3 V, IDS = 10 m A LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 21 7.5 dB typical at 12 GHz 18 ffl 15 < a La s 0.3 |im, Wo = 280 jun LOW COST PLASTIC PACKAGING


    OCR Scan     		PDF NE76038 NE76038 reliab121 NE76038-T1

    0619

    Abstract: g720
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li­ U n it m i l l i m e t e r s i .r ic h e s t


    OCR Scan     		PDF MGF1423B 157MIN 12GHz 10rcA 0619 g720

    M 1661 S

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power


    OCR Scan     		PDF MGFC2415A MGFC2400 150mA M 1661 S

    MGFC2430A

    Abstract: L to Ku band amplifiers
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2430A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The M G FC2400 series GaAs FETs were designed fo r high frequency, m edium and high power GaAs FET with N-channel S chottky barrier gate type. FEATURES • High output power


    OCR Scan     		PDF MGFC2430A FC2400 Trouble13 MGFC2430A L to Ku band amplifiers

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power


    OCR Scan     		PDF MGFC2407A MGFC2400

    Untitled

    Abstract: No abstract text available
    Text: m mmm GaAs f e t mmm mmmm mmm* mm immmmm GaAs FET Low Noise Amplifiers ! : mm ms «31 Input Type Frequency MHz NJS8300 3000-3100 NJS8605 5400-5900 : Noise Figure (dB max.) 2 | Gain (dB min.) Volt. (V) Current (mA) Input/Output Connector 15 5 20 SMA 3 20


    OCR Scan     		PDF NJS8300 NJS8605 NJS8606 NJS8701 NJS890Q NJS8901 NJS8102 NJS8603 NJS8601 NJS8000

    Untitled

    Abstract: No abstract text available
    Text: TC4711 PRELIMINARY INFORMATION Ku B A N D P O W E R F E T G a A s F I E L D E F F E C T T R A N S I S T O R FEATURE S 21 dBm output power at 1dB gain compression High associated gain : 8dB @14.5GHz Low source inductance High power added efficiency : 25% @14.5GHz


    OCR Scan     		PDF TC4711 TC4711-A5A/00 TC4711

    Untitled

    Abstract: No abstract text available
    Text: g V w T g q AMFW SERIES AMPLIFIERS ULTRA LOW NOISE Ku-BAIMD LIMA FEATURES • Noise Temperatures from 6 5 K • W eatherproof Housing • 3-Year Product W arranty OPTIONS • • • • • • • Integrated 1 1 0 /2 2 0 VAC Power Supply Integrated Fault Alarm Outputs


    OCR Scan     		PDF 12E10 S3116E10-6S