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    L TO KU BAND LOW NOISE AMPLIFIER Search Results

    L TO KU BAND LOW NOISE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC156R0G3D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFM31PC276D0E3L Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPL226R0G5D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    HA4-5114/883 Rochester Electronics LLC HA4-5114 - Quad, Low Noise, Uncompensated Operational Amplifier - Dual marked (5962-89634012A) Visit Rochester Electronics LLC Buy

    L TO KU BAND LOW NOISE AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    microwave radio transmitter

    Abstract: NJT5013 linear amplifier 1.6 to 30 MHz NJT5013F hpa L-band NJT5012 NJT5012F "ku band" amplifier NEW JAPAN RADIO
    Text: Ku-band Transmitter 0.5W/1.0W Type MODEL NO. MODEL NO. NJT5012 / 12F NJT5013 / 13F <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz IF Input to Ku Band (14.0 to 14.5 GHz)


    Original     		NJT5012 NJT5013 NJT5013] NJT5012F NJT5013F] microwave radio transmitter linear amplifier 1.6 to 30 MHz NJT5013F hpa L-band "ku band" amplifier NEW JAPAN RADIO PDF

    MGF4919G

    Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically


    Original     		MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223 PDF

    MGF4919

    Abstract: MGF4919G
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The


    OCR Scan     		MGF491xG MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G MGF4919 PDF

    NJT5024

    Abstract: New Japan Radio Co buc ku NJT5024F WR-75 waveguide WR-75
    Text: Ku-band 2W BUC [ Block Upconverter ] MODEL NO. NJT5024 / 24F <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz


    Original     		NJT5024 NJT5024 NJT5024F NJT5024/24F New Japan Radio Co buc ku NJT5024F WR-75 waveguide WR-75 PDF

    NJT5025F

    Abstract: NJT5025 buc ku WR-75 njt-5025
    Text: Ku-band 4W BUC [ Block Upconverter ] MODEL NO. NJT5025 / 25F <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz


    Original     		NJT5025 NJT5025 NJT5025F NJT5025/25F NJT5025F buc ku WR-75 njt-5025 PDF

    low noise hemt transistor

    Abstract: MGF4714CP InGaAs HEMT mitsubishi
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT High Electron Mobility OUTLINE DRAWING Unit:millimeters (0.6 Transistor) is designed for use in L to Ku band amplifiers. 1 The plastic mold package offer high cost performance, and has a


    Original     		MGF4714CP MGF4714CP 12GHz low noise hemt transistor InGaAs HEMT mitsubishi PDF

    buc ku

    Abstract: ku 4w transmitter HPA Ku WR75 connector "ku band" amplifier NJT5025DF phase detector 10 khz NJT5025D WR-75 microwave radio transmitter
    Text: Ku-band 4W BUC [ Block Upconverter ] With Power Monitor MODEL NO. NJT5025D / 25DF <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz


    Original     		NJT5025D NJT5025D NJT5025DF 21dBm, 25GHz, NJT5025D/25DF buc ku ku 4w transmitter HPA Ku WR75 connector "ku band" amplifier NJT5025DF phase detector 10 khz WR-75 microwave radio transmitter PDF

    buc ku

    Abstract: NJT5024 HPA Ku phase detector 10 khz waveguide WR-75 "ku band" amplifier 24DF NJT5024D NJT5024DF WR-75
    Text: Ku-band 2W BUC [ Block Upconverter ] With Power Monitor MODEL NO. NJT5024D / 24DF <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz


    Original     		NJT5024D NJT5024D NJT5024DF 21dBm, 25GHz, NJT5024D/24DF buc ku NJT5024 HPA Ku phase detector 10 khz waveguide WR-75 "ku band" amplifier 24DF NJT5024DF WR-75 PDF

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138 PDF

    NEC D 809 F

    Abstract: NEC D 809 71383B NEC D 809 k
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm


    OCR Scan     		NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k PDF

    L to Ku Band Low Noise GaAs MESFET

    Abstract: NE71383B NE71383
    Text: L to Ku Band Low Noise NE71383B N-Channel GaAs MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES 2.5 • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: WG = 280 µm


    Original     		NE71383B NE71383B 24-Hour L to Ku Band Low Noise GaAs MESFET NE71383 PDF

    C10535E

    Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION


    Original     		NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] C10535E NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B PDF

    NE674

    Abstract: NE67483 NE67483B
    Text: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m


    OCR Scan     		NE674 NE67400 NE67483B NE67483B] NE67400] NE674 NE67483 PDF

    3692 nec

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET IV IF f / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its


    OCR Scan     		NE4210M01 NE4210M01 200/im NE4210M01-T1 3692 nec PDF

    x band diode detector waveguide

    Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
    Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes


    Original     		PDF

    DDB3268-000

    Abstract: DDB5098-000 DDB4517-006 kaba DDL6672 CDB7619-000
    Text: Silicon Schottky Barrier Detector Diodes ESAlpha CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications


    OCR Scan     		B24-4579 DDB3268-000 DDB5098-000 DDB4517-006 kaba DDL6672 CDB7619-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Schottky Barrier Detector Diodes CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications


    OCR Scan     		PDF

    m1305 transistor

    Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
    Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082


    OCR Scan     		NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM353 NJM1458 NJM2041 m1305 transistor w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw PDF

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


    OCR Scan     		PDF

    CDB-7606

    Abstract: CDB7606-000
    Text: Silicon Schottky Barrier Detector Diodes S3 A lp h a CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ALPHA I'ND/ SEMICONDUC TOR 33E D • 0S65H43 DDDD7S3 3 * A L P Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes -v-o-7-0-1 Features ■ ■ ■ ■ ■ Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications


    OCR Scan     		0S65H43 P-041 P-076 PDF

    DDL6672-006

    Abstract: DDB3267 DDB4719-000 DDB4517-000 DDB4517-006 DDB6673-000 DDB6673-094 DDL6672-000 DDL6725-000 DDB5098-000
    Text: Silicon Schottky Barrier Detector Diodes B A Ip h CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications


    OCR Scan     		AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AK006L1-00 AS004M2-08 DDL6672-006 DDB3267 DDB4719-000 DDB4517-000 DDB4517-006 DDB6673-000 DDB6673-094 DDL6672-000 DDL6725-000 DDB5098-000 PDF

    CDB7619-000

    Abstract: CDE7618-000 Silicon Detector Diodes
    Text: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes


    OCR Scan     		PDF

    radar detector 10.5 ghz local oscillator

    Abstract: Silicon Point Contact Mixer Diodes dmc5910
    Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Features Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications Planar Passivated Dice for Reliability Uniform Characteristics Description Applications Alpha’s silicon Schottky barrier mixer diodes are de­


    OCR Scan     		40GHz MF5078-024 DMF5078-025 DMF4039-024 DMF4039-025 DMF5078-018 DMF5078-019 DMF4039-018 DMF4039-019 DMF5078-012 radar detector 10.5 ghz local oscillator Silicon Point Contact Mixer Diodes dmc5910 PDF