Untitled
Abstract: No abstract text available
Text: W741C260 ßVinbond H lü ix Electronics Corp. Cwinbond X ü n x Electronics Corp. Headquarters Winbond Electronics (H.K. Ltd. Rm . 803, W orld Trade Square, T ow er II, No. 4, C reation Rd. Ill, 123 H oi B u n Rd., Kw un Tong, S cie n ce -B a se d In dustrial Park,
|
OCR Scan
|
W741C260
886-2-2719Q505
|
PDF
|
9023TCB000A
Abstract: 9013TCB tj08 n 9013 s 9013 h 331 9013TCB000A 9003TCB000A
Text: 9003 B o a r d In T e r m i n a l mm UNIT inch 6.40 2.5 090 CO u v0i.o o i8OB .039-803 1.1 .043 rt w RECOMMENDED HOLE PATTERN IO SECTION B - B SECTION A -A V///Æ777X P .C .B —' 1.55 .061 9013 I ocd> B o a r d In T e r m i n a l mm .331 J .433 7.8 .307 ^
|
OCR Scan
|
9013TCB
t-J08
V7777,
9003TCB000A
9013TCB000A
9023TCB000A
CCD--9003R
9013R01
CCD--9023R
tj08
n 9013
s 9013 h 331
|
PDF
|
KH42HM2-851
Abstract: KH42HM2-852 KH42HM2-801 KH42HM2 KH42HM2-802 100KPPS 034-CA KH42HM KH42
Text: 2 -P h a s e Hybrid S tep p in g M otor ^ 1.8 KH42 series 800 type HIGH TORQUE, LOW VIBRATION AND LOW NOISE • STANDARD SPECIFICATIONS M O D E L KH42HM2 U N IT -801 DRIVE METHOD NUMBER OF PHASES STEP ANGLE d e g ./s te p -802 -803 -852 -851 UNI-POLAR BI-POLAR
|
OCR Scan
|
KH42HM2
JL40g
KH42HM
KH42HM2-851
KH42HM2-852
KH42HM2-801
KH42HM2
KH42HM2-802
100KPPS
034-CA
KH42
|
PDF
|
Untitled
Abstract: No abstract text available
Text: r .n o t e s : i.ooi rue BB-CD-803 -0 2 ¡ no. m a t ' l : co pper stock t k n . PLATING: ELECTRO TIN (.0003 MIN) 081 MIN-, TIN-PLATED BRASS FUNNEL FERRULE © NYLON INSULATION (COLOR CODED BLUE) 2 0 6 STUD SIZES:(-.005) .170*MWID 4 32 02 « .094 04 = .1 19
|
OCR Scan
|
E32244
BB-827X
BB-CD-803
|
PDF
|
B1133
Abstract: B 1184 J1311 W/CDBM MARTA
Text: REVISIONS L TR DESCRIPTION SEE PACKAGE XI D E S I GNATOR A B C D E F G H J K L M N P R S T U V w X Y 2 3 4 5 6 XI PACKAGE WI DTH ±30/£m 777 803 828 853 879 904 930 955 980 1006 1031 1057 1082 1107 1 133 1 1 58 1184 1209 1234 1260 1285 1311 1336 1361 1387
|
OCR Scan
|
005mm;
MKT-BPA05XXX
B1133
B 1184
J1311
W/CDBM MARTA
|
PDF
|
70498-5068
Abstract: 70498-2068 70497-1068
Text: 70498 5EE NOTE 5 DETAIL 'A' ASSEMBLED WITHOUT S T R A IN -R E L IE F SCALE 8s I .803 (20.4O) 70498 422 ( 10.72) ASSEMBLED (STRAIN 008/( R ELIER WITH IS STRAIN LOADED R ELIEF ARTER TERMINATION) 0. 2 0 ) < 1 15 6±. 0 0 0 4 50 CIRCUIT SHOWN ) . 3 9 6 ± 0 . 0 10)
|
OCR Scan
|
UCP2004-
U8I273
UDT1999-0464
U60545
2002/95/EC
2000/53/EC"
PK-70873-0258
S-70498-5*
S7049852
70498-5068
70498-2068
70497-1068
|
PDF
|
nytronics delay
Abstract: Nytronics DDL-450F
Text: NYTRONICS INC/ NYTRONICS 25E D ; ^ 7 0 0 ORANGE STREET, DARLINGTON, S. C. 29532 ' ‘ f ; ' ‘ ‘- : 803 393-5421 • -TWX 810-665*2182 14 10 12 • b?2177H OODOSfil fi ■ 7 ^ DDL-XXXF & LPS-XXX ADVANCED SCHOTTKY DELAY LINES 8 A D V A N C E D S C H O T T K Y (D D L -X X X F )
|
OCR Scan
|
DDL-25F
LPS-25
DDL-30F
LPS-30
DDL-35F
LPS-35
DDL-40F
LPS-40
DDL-45F
LPS-45
nytronics delay
Nytronics
DDL-450F
|
PDF
|
IC 7805 pin diagram
Abstract: block diagram of IC 7805 7805 pi IC 7805 14 pin diagram lc 7805 pl 7805 7805 ic free ic 7805 7805 LA 7805
Text: SN74ALVC7 803, S N 7 4 A L V C 7805, S N 7 4 A L V C 7 8 1 3 51 2 x 1 8, 256 x 1 8,64 x 1 8 L O W - P O W E R E D C L O C K E D FIRST-IN, F I RS T- OUT M E M O R I E S S C A S 436B -JU N E 1 9 9 4 - REVISED JULY 1995 DL PACKAGE TOP VIEW O p e r a t e s a t 3 - V to 3 . 6 - V V q q
|
OCR Scan
|
SN74ALVC7
IC 7805 pin diagram
block diagram of IC 7805
7805 pi
IC 7805 14 pin diagram
lc 7805
pl 7805
7805 ic free
ic 7805
7805
LA 7805
|
PDF
|
B111C
Abstract: RNSRY202
Text: It rin JL Tr E X T E R N A L V F M S T E P -U P DC/DC CO N VERTER CO N TR O LLER M O .EA -Ö 42-9 803 RN5RY202 OUTLINE T h e RN5RY202 S eries are VFM chopper C ontrol IC's for step-up D C /D C co n v erter w ith an ex tern al pow er tra n sis to r featu rin g h igh output voltage accuracy and low supply cu rre n t by CM O S process. T h e RN5RY202 S eries ICs
|
OCR Scan
|
RN5RY202
RN5RY202
B111C
RNSRY202
|
PDF
|
b 803 a
Abstract: No abstract text available
Text: SEK18 MKVINC Number of contacts 10-64 Card edge connectors for insulation displacement Identification C ard edg e c o n n e c to rs fo r in s u la tio n d is p la c e m e n t fo rR C .B . th ic k n e s s 1.6 m m Number of contacts * Part No. Drawing \ 10 14
|
OCR Scan
|
SEK18
54x12
54x16
54x19
54x24
54x29
54x31
b 803 a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D A L L A S DS1803 Addrsssabl Dual Digital PotGntiomGtGr s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 3V or 5V Power Supplies C 1 14 ] VCC L1 c 2 13 ] NC wi [2 3 12 HO A2 Q 4 11 :lo 5 10 "2 wo A0 Q 6 9 2 SDA hi • Ultra-low power consumption • Two digitally controlled, 256-position potentiometers
|
OCR Scan
|
DS1803
256-position
16-Pin
DS1803E
14-PIN
100KQ
Ebl4130
|
PDF
|
702 Z TRANSISTOR
Abstract: 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701
Text: SAMSUNG S E M I C ON D U CT OR INC i 4É D ¡ 7*11,4142 0 0 0 7 7 0 4 5 NpN EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE—750 @ IC -1 .5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
|
OCR Scan
|
MJE700/701/702/703
MJE800/801/802/803
MJE700/701
MJE702/703
O-126
702 Z TRANSISTOR
702 TRANSISTOR npn
702 TRANSISTOR
S6020
TL MJE2955T
702 pnp
TRANSISTOR S 802
4A complementary transistor
TRansistor 701
|
PDF
|
ut 803A
Abstract: SM803 b 803a SM805 SM803A
Text: SM 803/SM 803A/SM 805/SM 805A CMOS 8-Bit Single Chip Microcomuputer SM803/SM803A SM805/SM805A • CMOS 8-Bit Single Chip Microcomuputers Description Pin Connections T he S M 8 0 3 /A , S M 8 0 5 /A are CMOS 8 -b it sin gle chip m icrocom puters which have 4K bytes and
|
OCR Scan
|
803/SM
03A/SM
805/SM
SM803/SM803A
SM805/SM805A
ut 803A
SM803
b 803a
SM805
SM803A
|
PDF
|
Philips 2222 capacitor
Abstract: 2222 capacitor philips 29104 2222 033 2222 033 philips PHILIPS capacitors 2222 390 HM 2222 A capacitor 2220 2222 393 29224 philips capacitor 2222
Text: Metallized Polyphenylene Sulphide Film Capacitors Series 2222 390/394 Metallized Polyphenylene Sulphide Film Capacitors MKPS Chip Capacitor Series 2222 390/394 Features Style 2222 2222 2222 *2222 '? • Surface Mounted • Supplied in tape on reel Q u ick R eference Data
|
OCR Scan
|
12-series)
Philips 2222 capacitor
2222 capacitor philips
29104
2222 033
2222 033 philips
PHILIPS capacitors 2222 390
HM 2222 A
capacitor 2220 2222 393 29224
philips capacitor 2222
|
PDF
|
|
SBL Series
Abstract: SBL-121 SBL-221 SBL-801 EN3056 30562 J SBL121
Text: Ordering number : EN3056 No.3056 _ /_ SBL Series / B eam Lead Type GaAs S chottky B a rrie r Diode / / C to Millimeter Band Mixer, Detector, Modulator Applications F e a tu re s - F a c ilita te s easy m o u n tin g on MIC M icrowave IC
|
OCR Scan
|
EN3056
SBL-121
12GHz
SBL-801
SBL-221:
22GHzband
SBL Series
SBL-221
EN3056
30562 J
SBL121
|
PDF
|
Untitled
Abstract: No abstract text available
Text: i M ETR IC CONVERSIO N TABLE i i_ _ Aluminum Electrolytic Capacitors UNINSULATED CASE DIMENSIONS Case Dimensions Dia. mm 5 6.3 8 10 10 10 10 10 12.5 12.5 12.5 12.5 12.5 16 16 16 18 18 Fig. A Length mm F mm
|
OCR Scan
|
|
PDF
|
ic 803
Abstract: 4520C lta 803 I8010L 8010c ic803 8031 er
Text: _ AH-2_ MIC8030/8031 Application Hints MIC8030/MIC8031 Application Hints on Compatibility with Display Drivers Produced by AMI and HOLT T h e M IC 8 030/M IC 8031 can be m a de com p a tib le w ith all b o n d in g op tio n s of the G o u ld -A M I S 452 0 as w ell as all
|
OCR Scan
|
MIC8030/8031
MIC8030/MIC8031
030/M
I-8010L5,
I-8010L6,
I-8010L7,
I-8010C
HI-8010C6,
S4520G
ic 803
4520C
lta 803
I8010L
8010c
ic803
8031 er
|
PDF
|
JE802
Abstract: No abstract text available
Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic
|
OCR Scan
|
MJE800/801/803
JE700/701/702/703
MJE800/801
JE802/803
50fiA
JE802
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 802 Series 802 Series 803 Series !1h I "r ' + hAi an Inch es Dim. .05 6-.066 .05 2-,072 1.115-1.135 .55 2-,572 .4 9 0 - 510 .18 0- 200 DIA. .750 MAX. .3 0 2 -.3 2 2 A B C D E F G H c an -I H k > o M illim e te r 1.42-1.68 1.32-1.83 28.32-28.83 14.02-14.53
|
OCR Scan
|
|
PDF
|
TRANSISTOR S 802
Abstract: KSE800 ic 801
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KS E800/801/803 HIGH DC CU R R EN T GAIN MIN hFE= 750 @ lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EM ITTER RESISTORS Complement to KSE700/701/702/703 A B S O LU T E MAXIMUM RATINGS Characteristic
|
OCR Scan
|
E800/801/803
KSE700/701/702/703
KSE800/801
KSE802/803
KSE800/801/803
TRANSISTOR S 802
KSE800
ic 801
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C E R A M IC H IG H RELIABILITY M O LD E D /A X IA L & RADIAL_ KEMET . GENERAL INFO RM A TIO N M IL -C -12 3 INTRODUCTION TABLE I MIL-C-123 specification covers the general requirements for high reliability, general purpose BX and temperature stable (BP) ceramic dielectric fixed
|
OCR Scan
|
MIL-C-123
fo184KW
CKS16)
C222Z124K1X5CA
C222Z154K1X5CA
C222Z184K1X5CA
C222Z224K1X5CA
C222Z274K1X5CA
C222Z334K1X5CA
|
PDF
|
kse800
Abstract: 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701
Text: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic
|
OCR Scan
|
E800/801/803
KSE700/701/702/703
O-126
KSE800/801
KSE802/803
kse800
702 TRANSISTOR
702 Z TRANSISTOR
TRansistor L 701
|
PDF
|
IC 7377 pin diagram
Abstract: mp 1060 ceramic filter ffe
Text: 19-1217; Rev 0; 4/97 V M ilX I A I R e g u l a t e d 3 . 3 V Ch a r g e P u mp The MAX679 step-up, regulated charge pum p gener ates a 3.3V ±4 % output vo ltag e from a 1.8V to 3.6V in p u t v o lta g e two a lka lin e , N iC d, or NiM H; o r one Lithium-Ion battery . Output current is 20mA (min) from
|
OCR Scan
|
MAX679
330kH
IC 7377 pin diagram
mp 1060
ceramic filter ffe
|
PDF
|
JE801
Abstract: JE700 transistor H 802 y 803
Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 b= -1 -5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic
|
OCR Scan
|
MJE800/801/803
MJE800/801
MJE802/803
JE801
JE700
transistor H 802
y 803
|
PDF
|