L-BAND 1200-1400 MHZ Search Results

L-BAND 1200-1400 MHZ Result Highlights (5)

Part	Manufacturer	Description
XPN12006NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF)
TPN12008QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance
TLC32044IFK	Rochester Electronics LLC	TLC32044 - Voice-Band Analog Interface Circuits
TLC32044MFK/B	Rochester Electronics LLC	TLC32044 - Voice-Band Analog Interface Circuits
TLC32044IN	Rochester Electronics LLC	TLC32044 - Voice-Band Analog Interface Circuits

L-BAND 1200-1400 MHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
L-Band 1200-1400 MHz Abstract: diode gp 429 Radar x band radar HV400 Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor	Original	HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400	PDF
transistor s 1014 Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200 Text: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor	Original	HVV1214-025 HVV1214-075 HVV1214-025 EG-01-PO05X5 429-HVVi EG-01-PO05X1 transistor s 1014 L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200	PDF
ALR006 Abstract: ASI10510 Text: ALR006 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR006 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 9.5 dB at 6.0 W/ 1400 MHz • Omnigold Metalization System MAXIMUM RATINGS	Original	ALR006 ALR006 ASI10510 ASI10510	PDF
GROUND BASED RADAR Abstract: transistor SMD R1D Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications	Original	HVV1214-140 21DD1E) GROUND BASED RADAR transistor SMD R1D	PDF
ALR100 Abstract: ASI10514 Text: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG L DESCRIPTION: N J O A 1 B The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. D 2 3 M FEATURES: F • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz	Original	ALR100 ALR100 ASI10514 ASI10514	PDF
"RF Power Transistor" Abstract: 1200 - 1400 MHz L-Band Applications RZ1214B35Y Text: RZ1214B35Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B35Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 35 W/ 1400 MHz • Omnigold Metalization System	Original	RZ1214B35Y RZ1214B35Y "RF Power Transistor" 1200 - 1400 MHz L-Band Applications	PDF
MIL-STD-750D Abstract: L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVV1214-25 HVVi Semiconductors Text: HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty DESCRIPTION PACKAGE The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from	Original	HVV1214-025 HVV1214-25 MIL-STD-750D, MIL-STD-750D L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVVi Semiconductors	PDF
RZ1214B65Y Abstract: "RF Power Transistor" RF NPN POWER TRANSISTOR 2.5 GHZ Text: RZ1214B65Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B65Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 80 W/1400 MHz • Omnigold Metalization System	Original	RZ1214B65Y RZ1214B65Y "RF Power Transistor" RF NPN POWER TRANSISTOR 2.5 GHZ	PDF
ALR100 Abstract: ASI10514 Text: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. O A B E K D FEATURES: C G • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz	Original	ALR100 ALR100 ASI10514 ASI10514	PDF
Untitled Abstract: No abstract text available Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar	Original	CGHV14500 CGHV14500 CGHV14	PDF
Untitled Abstract: No abstract text available Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar	Original	CGHV14250 CGHV14250 CGHV14	PDF
Untitled Abstract: No abstract text available Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar	Original	CGHV14500 CGHV14500 CGHV14	PDF
Untitled Abstract: No abstract text available Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar	Original	CGHV14250 CGHV14250 CGHV14 350anning,	PDF
Untitled Abstract: No abstract text available Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar	Original	CGHV14500 CGHV14500 CGHV14	PDF

Radar pallet Abstract: L-Band 1200-1400 MHz RESISTANCE RF 800W 1214-800P Text: 1214-800P 800W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 800 Watts - 300µs, 10%, +50V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance Reduce System Size and Components	Original	1214-800P 1214-800P Radar pallet L-Band 1200-1400 MHz RESISTANCE RF 800W	PDF
1214-800P Abstract: 800W L-Band 1200-1400 MHz x band radar Text: 1214-800P Rev. C 1214-800P 800W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 800 Watts - 300µs, 10%, +50V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance	Original	1214-800P 1214-800P 800W L-Band 1200-1400 MHz x band radar	PDF
L-Band 1200-1400 MHz Abstract: 1214-700P Radar pallet Text: 1214-700P Rev B 1214-700P 700W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 700 Watts - 300µs, 10%, +50V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance	Original	1214-700P 1214-700P L-Band 1200-1400 MHz Radar pallet	PDF
1214-550P Abstract: Radar pallet L-Band 1200-1400 MHz Text: 1214-550P Rev B 1214-550P 550W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 550 Watts - 300µs, 10%, +42V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance	Original	1214-550P 1214-550P Radar pallet L-Band 1200-1400 MHz	PDF
Radar pallet Abstract: L-Band 1200-1400 MHz 1214-550P Text: 1214-550P 550W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 550 Watts - 300µs, 10%, +42V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance Reduce System Size and Components	Original	1214-550P 1214-550P Radar pallet L-Band 1200-1400 MHz	PDF
700W Abstract: L-Band 1200-1400 MHz Text: 1214-700P1 700W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 700 Watts - 300µs, 10%, +50V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance Reduce System Size and Components	Original	1214-700P1 1214-700P1 700W L-Band 1200-1400 MHz	PDF
HVV1214-140 Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain	Original	HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB	PDF
ALR006 Abstract: ASI10510 transistor 306 x Text: ALR006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR006 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 9.5 dB at 6.0 W/ 1400 MHz	Original	ALR006 ALR006 ASI10510 transistor 306 x	PDF
ALR060 Abstract: ASI10513 Text: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz	Original	ALR060 ALR060 10CODE: ASI10513 ASI10513	PDF
ALR015 Abstract: ASI10511 Text: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR015 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 8.5 dB at 15 W/1400 MHz	Original	ALR015 ALR015 ASI10511	PDF

L-BAND 1200-1400 MHZ Search Results

L-BAND 1200-1400 MHZ Result Highlights (5)

L-BAND 1200-1400 MHZ Datasheets Context Search

L-Band 1200-1400 MHz

transistor s 1014

ALR006

GROUND BASED RADAR

ALR100

"RF Power Transistor"

MIL-STD-750D

RZ1214B65Y

ALR100

Untitled

Untitled

Untitled

Untitled

Untitled

Radar pallet

1214-800P

L-Band 1200-1400 MHz

1214-550P

Radar pallet

700W

HVV1214-140

ALR006

ALR060

ALR015