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    L-BAND AMPLIFIER Search Results

    L-BAND AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    UPC4570GR(20)-9LG-E1-A Renesas Electronics Corporation Ultra Low-Noise, High-speed, Wide Band, Dual Operational Amplifier Visit Renesas Electronics Corporation
    UPC844GR(20)-9LG-E1-A Renesas Electronics Corporation Single Power Supply, High-speed, Wide Band, Quad Operational Amplifier Visit Renesas Electronics Corporation

    L-BAND AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Onetta

    Abstract: onetta ioe onetta 1100 IOE1130L-11680D000
    Text: IOE 1100 L-Band EDFA Series IOE 1130 L Booster Amplifier The Onetta IOE 1100 L-Band EDFA Series are high-performance intelligent L-band erbium-doped fiber amplifiers EDFAs for long-haul and ultra long-haul applications. The IOE 1130 L Booster Amplifier is part of the IOE 1100 L-Band


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    PDF 100GHz 40Gbps. Onetta onetta ioe onetta 1100 IOE1130L-11680D000

    inline amplifier specifications

    Abstract: onetta ioe "line AMPLIFIER" edfa amplifier IOE-1110L-12665D000 optical fiber DSF onetta edfa inline amplifier onetta 1100 in line amplifier fiber
    Text: IOE 1100 L-Band EDFA Series IOE 1110 L In-Line Amplifier The Onetta IOE 1100 L-Band EDFA Series are high-performance intelligent L-band erbium-doped fiber amplifiers EDFAs for long-haul and ultra long-haul applications. The IOE 1110 L In-Line Amplifier is part of the IOE 1100 L-Band


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    PDF 100GHz 40Gbps. 21dBm inline amplifier specifications onetta ioe "line AMPLIFIER" edfa amplifier IOE-1110L-12665D000 optical fiber DSF onetta edfa inline amplifier onetta 1100 in line amplifier fiber

    datasheet ADC 8080

    Abstract: ADC 8080 diode 366 nm ADC Telecommunications max1440 Optical thin film filter
    Text: Compact Optical Module Band Separator: L Band Pass Filter Preliminary ADC's Band Separator: L Band Pass Filter is a two-port, compact optical module that utilizes a thin film interference filter. The band separator has low insertion loss in the pass band and


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    PDF 100500PR datasheet ADC 8080 ADC 8080 diode 366 nm ADC Telecommunications max1440 Optical thin film filter

    Furukawa Electric North America

    Abstract: XL Photonics L-band Amplifier
    Text: ERBIUM-DOPED FIBERS FOR L-BAND Specification Sheet R37105 XL Erbium-Doped Product Description OFS offers this erbium-doped fiber designed specifically for extended L-Band fiber amplifiers operating in the 1565-1620 nm region. This fiber enables 30% more bandwidth for advanced L-Band amplifier


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    PDF R37105 Furukawa Electric North America XL Photonics L-band Amplifier

    R37102-80

    Abstract: 200kpsi
    Text: ERBIUM-DOPED FIBERS FOR L-BAND Specification Sheet LRL and LRL 80 Erbium-Doped Product Description LRL erbium-doped fiber reduces the fiber length required to build L-Band amplifiers. It is ideal for amplifiers for L-Band applications. Using both LRL and LSL erbiumdoped fibers in an amplifier adds flexibility


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    PDF

    HS350

    Abstract: VP215
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2131T5D L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2131T5D is GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. This device realizes high gain and high output power.


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    PDF PG2131T5D PG2131T5D 14-pin HS350 VP215

    edfa raman amplifier

    Abstract: E2000 connector edfa amplifier E2000 JDS uniphase EDFA
    Text: COMMUNICATIONS COMPONENTS Fused Coupler, Single Window, Low loss C+L Band or S Band FFCK Series Key Features • High-power handling • Wide range of regular parts readily available • Proven reliability Applications • Signal monitoring in C+L band EDFA or RAMAN amplifier


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    PDF GR-1221 498-JDSU 5378-JDSU E2000 E2000/APC SMF-28 edfa raman amplifier E2000 connector edfa amplifier E2000 JDS uniphase EDFA

    TA4001F

    Abstract: No abstract text available
    Text: TA4001F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4001F VHF~UHF Wide Band Amplifier Features l Band width: 2.4 GHz typ. (3dB down) l High gain: |S21|2 = 12.5dB (typ.) (f = 500 MHz) l 50 Ω Input and output impedance l Small package


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    PDF TA4001F 000707EBA1 TA4001F

    2.2 GHz local oscillator ic

    Abstract: 1SV210 nec vco PC2756T
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µ PC2756T 3 V-BIAS, L-BAND SILICON DOWNCONVERTER IC FOR GPS RECEIVER AND WIRESLESS COMMNUNICATIONS DESCRIPTION µPC2756T is a silicon monolithic integrated circuit designed as L-band downconverter. This L-band downconverter IC is


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    PDF PC2756T PC2756T 2.2 GHz local oscillator ic 1SV210 nec vco

    B412

    Abstract: B69640 BBY51 U2730B U2730B-B 1607B SSO28 B696 L-band Tuner l-band downconverter
    Text: U2730B L-Band Down-Converter for DAB Receivers Description The U2730B is a monolithic integrated L-band downconverter circuit fabricated in TEMIC Semiconductors’ advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB receiver. The device


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    PDF U2730B U2730B D-74025 20-May-99 B412 B69640 BBY51 U2730B-B 1607B SSO28 B696 L-band Tuner l-band downconverter

    TA4002F

    Abstract: No abstract text available
    Text: TA4002F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4002F VHF~UHF Wide Band Amplifier Features l Band width: 1.3 GHz typ. (3dB down) l High gain: |S21|2 = 23dB (typ.) (f = 500 MHz) l 50 Ω Input and output impedance l Small package Pin Assignment (top view)


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    PDF TA4002F 000707EBA1 TA4002F

    GRM39CH

    Abstract: Susumu Marking TFL0816-3N9 diode gp 429 TFL0816-12N TFL0816-22N TFL0816-27N TFL0816-33N TFL0816-5N6 TFL0816-6N8
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2132TQ L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2132TQ is GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.


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    PDF PG2132TQ PG2132TQ 10-pin GRM39CH Susumu Marking TFL0816-3N9 diode gp 429 TFL0816-12N TFL0816-22N TFL0816-27N TFL0816-33N TFL0816-5N6 TFL0816-6N8

    1607B

    Abstract: B69640 B696 BFS 65 B412 BBY51 U2730B-BFS U2730B-BFSG1 dab Receiver b69640g
    Text: U2730B-BFS L-Band Down-Converter for DAB Receivers Description The U2730B-BFS is a monolithic integrated L-band down-converter circuit fabricated in Atmel Wireless & Microcontrollers’ advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB


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    PDF U2730B-BFS U2730B-BFS D-74025 12-Oct-00 1607B B69640 B696 BFS 65 B412 BBY51 U2730B-BFSG1 dab Receiver b69640g

    amplifier 950-2150 MHZ

    Abstract: RF Splitter 950-2150 MHZ 950-2150 MHZ receiver 2990PRO F connector Splitter 2990P
    Text: L-Band F Force Model 2990PRO Optical Broadcast Systems DBS L-Band Transport Model 2990 transports the full L-Band spectrum 950-2200 MHz as a standard feature. LNB power uses current limiting technology. The unit resets itself, eliminating down time due to blown fuses.


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    PDF 2990PRO 2990PRO: 2990PRO 2990P-T-1310-SA 2990P-R-SA amplifier 950-2150 MHZ RF Splitter 950-2150 MHZ 950-2150 MHZ receiver F connector Splitter 2990P

    grm39ck1r5c50

    Abstract: TFL0816-12N TFL0816-2N2 TFL0816-8N2 GRM39CH101J50
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.


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    PDF PG2126TB PG2126TB grm39ck1r5c50 TFL0816-12N TFL0816-2N2 TFL0816-8N2 GRM39CH101J50

    dab RECEIVER

    Abstract: 1607B B412 B69640 BBY51 L100 U2735B-B dab circuitry U2735BB
    Text: U2735B-B L-Band Down-Converter for a DAB Receiver Description The U2735B-B is a monolithic integrated L-band downconverter circuit fabricated with TEMIC’s advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB receiver. The device includes


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    PDF U2735B-B U2735B-B D-74025 21-Aug-98 dab RECEIVER 1607B B412 B69640 BBY51 L100 dab circuitry U2735BB

    Siemens matsushita capacitor

    Abstract: dab RECEIVER U2735B-B B412 B69640 BBY51 L100 B696
    Text: U2735B-B L-Band Down-Converter for a DAB Receiver Description The U2735B-B is a monolithic integrated L-band downconverter circuit fabricated with TEMIC’s advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB receiver. The device includes


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    PDF U2735B-B U2735B-B D-74025 21-Aug-98 Siemens matsushita capacitor dab RECEIVER B412 B69640 BBY51 L100 B696

    TFL08

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.


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    PDF PG2126TB PG2126TB TFL08

    TA4012FU

    Abstract: No abstract text available
    Text: TA4012FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications Features l Low current: ICC = 6.5 mA l Wide band: f = 2.0 GHz 3dB down l Operatin supply voltage: VCC = 1.5~2.2 V Pin Assignment Maximum Ratings (Ta = 25°C)


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    PDF TA4012FU TA4012FU

    TA4011FU

    Abstract: No abstract text available
    Text: TA4011FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications Features l Low current: ICC = 3.5 mA l Wide band: f = 2.4 GHz 3dB down l Operatin supply voltage: VCC = 1.5~3 V Pin Assignment Maximum Ratings (Ta = 25°C)


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    PDF TA4011FU TA4011FU

    TA4000F

    Abstract: No abstract text available
    Text: TA4000F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4000F VHF~UHF Wide Band Amplifier Applications Features l Band width : 700 MHz min @3dB down l Low noise: 4dB (typ.) @f = 400 MHz l Small package Pin Assignment (top view) Marking Weight: 0.014 g (typ.)


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    PDF TA4000F 000707EBA1 TA4000F

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT fi PC2756T 3 V-BIAS, L-BAND SILICON DOWNCONVERTER 1C FOR GPS RECEIVER AND W IRESLESS COMMNUNICATIONS DESCRIPTION ¿¿PC2756T is a silicon monolithic integrated circuit designed as L-band downconverter. This L-band downconverter 1C is


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    PDF uPC2756T PC2756T

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT ¿iPG174TA L-BAND PA DRIVER AMPLIFIER DESCRIPTION The ,uPG174TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output


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    PDF iPG174TA uPG174TA C10535E)

    cd 6283 cs

    Abstract: cd 6283 Power amplifier I2125 cd 7368 ZO 103 MA 75 623 KGF1254 KGF1254B CI 7408 D0227
    Text: O K I electronic components KGF1254B/1254 Medium-Power Amplifier for UHF-Band and PCS Frequencies G EN ER A L DESCRIPTIO N The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to the L band, that features high output power, low noise, and low current dissipation. The


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    PDF KGF1254B/1254 KGF1254B KGF1254 1000ià F1254B/1254 1000fi cd 6283 cs cd 6283 Power amplifier I2125 cd 7368 ZO 103 MA 75 623 CI 7408 D0227