hall effect 66a
Abstract: 66a hall sensor planar transformer theory transmission line transformers 2C12 RG405 ATN-4112A FCI Airmax VSe FREQUENCY DOMAIN REFLECTOMETER HP8720ES
Text: DesignCon 2006 Theory and Measurement of Unbalanced Differential-Mode Transmission Lines Stephen B. Smith, FCI USA, Inc. stephen.smith@fciconnect.com Sedig S. Agili, Penn State University. ssa10@psu.edu Vittal Balasubramanian, FCI USA, Inc. vittal.balasubramanian@fciconnect.com
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ssa10
MTT-13,
hall effect 66a
66a hall sensor
planar transformer theory
transmission line transformers
2C12
RG405
ATN-4112A
FCI Airmax VSe
FREQUENCY DOMAIN REFLECTOMETER
HP8720ES
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UMT6 SC-88
Abstract: SOT-363 marking ROHM 23marking Transistor code iz sot363
Text: Data Sheet POWER SUPPLY MONITOR DEVICES EML22/UML23N Dimensions Unit : mm Features 1) Packaging Zener diode and small-signal amplifier transistor EMT6 2) Using outside connection able to use Power supply monitor device 3) When use Power supply monitor device,
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EML22/UML23N
SC-88)
OT-363>
EML22
UML23N
155ppm/
R1120A
UMT6 SC-88
SOT-363 marking ROHM
23marking
Transistor code iz sot363
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24PIN
Abstract: CXG1118ER GC118
Text: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1118ER
CXG1118ER
VQFN-24P-03
24PIN
GC118
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3618A
Abstract: 24PIN CXG1118ER SONY CHOKE cxg1118
Text: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1118ER
CXG1118ER
VQFN-24P-03
3618A
24PIN
SONY CHOKE
cxg1118
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Untitled
Abstract: No abstract text available
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using
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CXG1115ER
CXG1115ER
24PIN
VQFN-24P-03
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gps l10
Abstract: No abstract text available
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1115ER
CXG1115ER
24PIN
VQFN-24P-03
gps l10
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Untitled
Abstract: No abstract text available
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1115ER
CXG1115ER
24PIN
VQFN-24P-03
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24PIN
Abstract: CXG1115ER
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1115ER
CXG1115ER
VQFN-24P-03
24PIN
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Untitled
Abstract: No abstract text available
Text: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)
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CXG1115AER
CXG1115AER
VQFN-24P-04
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gps l10
Abstract: 24PIN CXG1115AER signal amplifier 800 mhz cdma
Text: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)
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CXG1115AER
CXG1115AER
VQFN-24P-04
gps l10
24PIN
signal amplifier 800 mhz cdma
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gps l10
Abstract: No abstract text available
Text: CXG1115AER Dual-band Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using
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CXG1115AER
CXG1115AER
VQFN-24P-04
gps l10
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Untitled
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928
RF3928280W
DS120508
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ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120119
ATC100B620
L22 amplifier
Gan hemt transistor RFMD
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28F0181-1SR-10
Abstract: CAPACITOR 150 RED
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120508
28F0181-1SR-10
CAPACITOR 150 RED
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marking l33
Abstract: transistor L44 L33 TRANSISTOR BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor
Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features
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PTFA261702E
PTFA261702E
170-watt
marking l33
transistor L44
L33 TRANSISTOR
BCP56
LM7805
RO4350
L42 marking transistor
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blf574
Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract
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AN10714
BLF574
BLF574,
AN10714
Anzac CH132
amidon BN-61-202
ATC100B6R8CT500X
NARDA 3020A
bn-61-202
FM low power LDMOS NXP transistor
semirigid
cw 7808
hp778d
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Untitled
Abstract: No abstract text available
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse
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RFHA1020
DS120508
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS120503
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS120503
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RF3928B
Abstract: power transistor gan s-band RF392
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS111208
power transistor gan s-band
RF392
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ultrasound sonar
Abstract: AD9721BR 25CC AD9040A AD9040AAQ AD9040AAZ AD9040AJR 42CA
Text: ANALOG DEVICES INC bSE T> • OfllbfiQO 003fl4?i4 L22 ■ ANA 10-Bit, 40 MSPS A/D Converter ANALOG ► DEVICES FEATURES Low Power: 940 mW 53 dB SNR a 10 MHz AIN On-Chip T/H , Reference CMOS-Compatible 2 V p-p Analog Input Fully Characterized Dynamic Performance
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10-Bit,
AD9040A
10-bit
28-Pin
ultrasound sonar
AD9721BR
25CC
AD9040AAQ
AD9040AAZ
AD9040AJR
42CA
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BLV38
Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
Text: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .
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711Gfl5ti
BLV38
711002t.
0b2c13fl
BLV38
4312 020 36642
transistor bd 346
class A push pull power amplifier
PHILIPS 4312 amplifier
sot179
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Untitled
Abstract: No abstract text available
Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features
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D03TD32
BLV38
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4312 020 36642
Abstract: transistor tt 2222 philips Fxc 3 b TRANSISTOR BO 346 ic LM 356 mml 600 BLV38
Text: N AMER PHILIPS/DISCRETE b'ìE J> • IAPX bbS3T31 OGi^GaE b47 BLV38 A VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VHF television transmitters vision or sound amplifiers . Features
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bbS3T31
BLV38
bbS3131
4312 020 36642
transistor tt 2222
philips Fxc 3 b
TRANSISTOR BO 346
ic LM 356
mml 600
BLV38
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