L33 TRANSISTOR Search Results

L33 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

L33 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S5 100 B112 MT RELAY Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1	Original	VAT300 VAT300, ST-3450C E-08225 D-50677 F-93601 I-20092 B-9000 C/4566/E S5 100 B112 MT RELAY AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor	PDF
L33 TRANSISTOR Abstract: transistor L33 npn l33 l33 sot23 l33 thermal UBC370 DD44170 transistor KIN BF747 BF747W Text: NPN 1 GHz wideband transistor PH IL IP S INTERNATIONAL DESCRIPTION "/ ' SbE D • 3 i^ /^ 7 BF747W 71 1D ô E b G D 4 4 ‘17D L33 « P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF	OCR Scan	BF747W 711DflEb DD44170 OT323 BF747W BF747. UBC370 OT323. L33 TRANSISTOR transistor L33 npn l33 l33 sot23 l33 thermal UBC370 transistor KIN BF747	PDF
AT 2005A Abstract: L33 TRANSISTOR ATMEl 837 ARM CORE 1825 verilog code for UART with BIST capability 8 bit risc microprocessor using vhdl L33v verilog code for 32 bit risc processor 2005A-ASIC-06 MIPS64 5kf Text: Features • • • • • Available in Gate Array, Embedded Array or Standard Cell High-speed, 75 ps Gate Delay, 2-input NAND, FO = 2 nominal Up to 13.7 Million Used Gates and 1516 Pins 0.18µ Geometry in up to Six-level Metal System-level Integration Technology	Original	ARM920TTM ARM946E-STM MIPS64TM AT 2005A L33 TRANSISTOR ATMEl 837 ARM CORE 1825 verilog code for UART with BIST capability 8 bit risc microprocessor using vhdl L33v verilog code for 32 bit risc processor 2005A-ASIC-06 MIPS64 5kf	PDF
c38 transistor Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37 Text: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.	OCR Scan	D0b31t BLV948 OT262A2 MRC117 2x100 c38 transistor PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON I1L[ MSC81058 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY o o :1 @ RATED CONDITIONS HERMETIC STRIP AC PACKAGE P o u t = 10 W MIN. WITH 10 dB GAIN @ 1 GHz PIN CONNECTION	OCR Scan	MSC81058 MSC81058 7T2T237 C127320 J135021C	PDF
L33 TRANSISTOR Abstract: TC-2160 marking l33 Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G A 1A 4M M ED IU M SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors Built-in T Y P E in millimeters B] = 10 ki2 R 2 = 10 k i î • Com plem entary to G N 1 A 4 M	OCR Scan	1988M L33 TRANSISTOR TC-2160 marking l33	PDF
blf888 Abstract: L33 TRANSISTOR C4532X7R1E475MT020U Capacitor L33 470 dvb-t transmitters RF35 DVB-T transistor amplifier BLF888 nxp ez90 Text: BLF888 UHF power LDMOS transistor Rev. 02 — 22 October 2009 Preliminary data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 BLF888 L33 TRANSISTOR C4532X7R1E475MT020U Capacitor L33 470 dvb-t transmitters RF35 DVB-T transistor amplifier BLF888 nxp ez90	PDF
smd transistor l32 Abstract: SMD EZ 648 001aan207 BLF0510H6600P Text: BLF0510H6600P Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog	Original	BLF0510H6600P powe11 smd transistor l32 SMD EZ 648 001aan207 BLF0510H6600P	PDF
L33 TRANSISTOR Abstract: transistor L33 FA1A4M 1A4M Text: DATA SHEET \|\J P C " / SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES » Resistors Built-in TY PE in millimeters W— 2 .8 ± 0.2 1.5 0.651c O— W V Ri -v w -4 * • - B 3- : ÒE	OCR Scan		PDF
transistor BD 522 Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800 Text: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M \| BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	b3fcj72SM BD796 BD798 BD798 BD800 BD802 transistor BD 522 TRANSISTOR BD 168 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800	PDF
SMD EZ 648 Abstract: smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12 Text: BLF988; BLF988S Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog	Original	BLF988; BLF988S BLF988 SMD EZ 648 smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12	PDF
Parallel Application LM2596 Abstract: LM2596-ADJ DO3308-223 lm2596adj Capacitor L33 lm2596-12 lm2596 ns lm2596 3.3 negative voltage regulator lm2596 adj Text: LM2596 GENERAL DESCRIPTION FEATURES The LM2596 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 3A load with excellent line and load regulation. These devices are available	Original	LM2596 LM2596 RL-1284-22-43 RL1500-22 PE-53815 PE-53815-S PE-53821 PE-53821-S Parallel Application LM2596 LM2596-ADJ DO3308-223 lm2596adj Capacitor L33 lm2596-12 lm2596 ns lm2596 3.3 negative voltage regulator lm2596 adj	PDF
Untitled Abstract: No abstract text available Text: BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog	Original	BLF988; BLF988S BLF988	PDF
smd transistor L33 Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog	Original	BLF879P smd transistor L33 dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor	PDF

UT-090C-25 Abstract: smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253 Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.	Original	BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P UT-090C-25 smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253	PDF
SMD l33 Transistor Abstract: No abstract text available Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.	Original	BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P SMD l33 Transistor	PDF
Untitled Abstract: No abstract text available Text: BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 2 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog	Original	BLF10H6600P; BLF10H6600PS BLF10H6600P	PDF
BLF888 Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP	PDF
Untitled Abstract: No abstract text available Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 BLF888	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting	OCR Scan	BLV948	PDF
S T R 54041 EQUIVALENT Abstract: 33u 35v electrolytic capacitor Text: LM2596 Simple switcher Power Converter 150kHz 3A Step-Down Voltage Regulator GENERAL DESCRIPTION FEATURES The LM2596 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 3A load with	Original	LM2596 150kHz needed63-5L S T R 54041 EQUIVALENT 33u 35v electrolytic capacitor	PDF
smd transistor L33 Abstract: transistor smd l33 SMD l33 Transistor Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog	Original	BLF888A; BLF888AS BLF888A smd transistor L33 transistor smd l33 SMD l33 Transistor	PDF
j3076 Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378 Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 j3076 BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378	PDF
BLF888A Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33 Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog	Original	BLF888A; BLF888AS BLF888A SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33	PDF

L33 TRANSISTOR Search Results

L33 TRANSISTOR Result Highlights (5)

L33 TRANSISTOR Datasheets Context Search

S5 100 B112 MT RELAY

L33 TRANSISTOR

AT 2005A

c38 transistor

Untitled

L33 TRANSISTOR

blf888

smd transistor l32

L33 TRANSISTOR

transistor BD 522

SMD EZ 648

Parallel Application LM2596

Untitled

smd transistor L33

UT-090C-25

SMD l33 Transistor

Untitled

BLF888

Untitled

Untitled

S T R 54041 EQUIVALENT

smd transistor L33

j3076

BLF888A