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    L4 TRANSISTOR Search Results

    L4 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    L4 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor mark l6

    Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
    Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units


    Original     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 transistor mark l6 KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23

    6n134

    Abstract: BS9400
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 6N134, 6N134/L2, L3, L4 DUAL CHANNEL HERMETICALLY SEALED OPTOCOUPLER Circuit and Package Features Description


    Original     		PDF 6N134, 6N134/L2, BS9400 GO123 BS9000 BS5750/ISO9000/EN29000. 6n134

    4N55 optocoupler

    Abstract: 4n55 high speed logic to logic optocoupler Radiation Assured Devices
    Text: 4N55, 4N55/L2, L3, L4: Optocoupler, 16 Pin Dual Channel High Speed Hermetically Sealed Datasheet Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055


    Original     		PDF 4N55/L2, /SHRUTI/iscl/4n55 BS9000 BS5750/ISO9000/EN29000. 4N55 optocoupler 4n55 high speed logic to logic optocoupler Radiation Assured Devices

    KST1623L7

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7

    Untitled

    Abstract: No abstract text available
    Text: 1 of 6 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 6N134, 6N134/L2, L3, L4 DUAL CHANNEL HERMETICALLY SEALED OPTOCOUPLER Circuit and Package Features


    Original     		PDF 6N134, 6N134/L2, BS9400 GO123 BS9000 BS5750/ISO9000/EN29000.

    DRAF123J

    Abstract: draf123
    Text: DRAF123J Tentative Total pages page DRAF123J Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF123J DRAF123J draf123

    Untitled

    Abstract: No abstract text available
    Text: DRA2123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123J Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L4


    Original     		PDF DRA2123J DRC2123J UL-94 DRA2123J0L SC-59A O-236ts.

    L4981A-L4981B

    Abstract: L4981 PFC dip 16 pin15 vcc st microelectronics MOSFET 31N
    Text: SGS-THOMSON 5 7 . L4 9 8 1 A L4 9 8 1 B m POWER FACTOR CORRECTOR ADVANC E DATA • ■ ■ . ■ . ■ . ■ ■ ■ CONTROL BOOST PWM UP TO 0.99P.F. LIMIT LINE CURRENT DISTORTION TO < 5% UNIVERSAL INPUT MAINS FEED FORWARD LINE AND LOAD REGULA­ TION AVERAGE CURRENT MODE PWM FOR


    OCR Scan     		PDF L4981X L4981XD L4981 L4981A-L4981B L4981 PFC dip 16 pin15 vcc st microelectronics MOSFET 31N

    JE210

    Abstract: No abstract text available
    Text: N ovem ber 1996 Micro Linear ML4508 Low Voltage Drop Voice Coil Servo Driver GENERAL DESCRIPTION Th e M L4 5 0 8 is a vo ice co il pow er d river intended for use in High Perform ance 5 V Hard D isk servo system s. The M L4 5 0 8 con tain s all control circu itry necessary to drive


    OCR Scan     		PDF 1/24AV ML4508 L4S08CS 24-Pin JE210

    philips 3f3 ferrite

    Abstract: AN890 variac used as a battery charger
    Text: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE


    OCR Scan     		PDF 100ns DIP16 DIP16 S016W L4990/L4990A DIP16) L4990 D/L4990AD S016W) philips 3f3 ferrite AN890 variac used as a battery charger

    philips 3f3 ferrite

    Abstract: AN890 transistor KT 816 dz 300 AN-890
    Text: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE


    OCR Scan     		PDF 100ns DIP16 DIP16 S016W L4990/L4990A DIP16) L4990D/L4990AD S016W) philips 3f3 ferrite AN890 transistor KT 816 dz 300 AN-890

    Untitled

    Abstract: No abstract text available
    Text: July 1992 3 ^ Micro Linear A D V A N C E IN F O R M A T IO N ML4508 Low Saturation 5V Voice Coil Servo Driver GENERAL DESCRIPTION The M L4 5 0 8 is a vo ice coil pow er driver intended tor use in both High Perform ance 5V Hard D isk servo system s. The M L4 5 0 8 contains all control circuitry necessary to drive the


    OCR Scan     		PDF ML4508

    je210

    Abstract: sim 5218
    Text: Septem ber 1993 P R E L IM IN A R Y M ^ M ic ro Linear ML4508 Low Voltage Drop Voice Coil Servo Driver GENERAL DESCRIPTION T h e M L4 5 0 8 is a vo ice co il pow er d river intended for use in H igh Perform ance 5 V Hard D isk servo system s. The M L4 5 0 8 contains all control circu itry necessary to drive


    OCR Scan     		PDF ML4508 1/24A L4508CS je210 sim 5218

    transistor mark l6

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 transistor mark l6

    MPSA10

    Abstract: MPSA10 equivalent transistor
    Text: SAMSUNG SEMICONDUCTOR I NC MPSA10 l4 E | 7 «,fcm Ma 0007341, 5 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: Veto= 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF MPSA10 625mW T-29-21 MPSA10 MPSA10 equivalent transistor

    L6 TRANSISTOR

    Abstract: transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 L6 TRANSISTOR transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6

    MARKING SA transistor

    Abstract: marking code ER transistor KST1623L6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 D02S10S MARKING SA transistor marking code ER transistor KST1623L6

    BFU309

    Abstract: No abstract text available
    Text: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections


    OCR Scan     		PDF BFU308/309/310 MSB032 MBB114 PINNING-TO-18 00E3b b53T31 BFU309

    2N5531

    Abstract: SOLITRON 10MHZ 2N5527 BR100A BR101A SOLITRON DEVICES
    Text: SOLITRON DEVICES INC ' T^ 3 S~o5' DeTJ fl3bflb02 DDDnst. b _ RADIATION RESISTANT NPN SILICON POWER TRANSISTORS BR100A BR101A NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE L E V E L TO 3 x10 l4 n /C m 2


    OCR Scan     		PDF fl3bflb02 BR100A BR101A 3x10l4n/Cm2 BR100A 2N5531 SOLITRON 10MHZ 2N5527 BR101A SOLITRON DEVICES

    S3C marking

    Abstract: No abstract text available
    Text: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.


    OCR Scan     		PDF BF556A BF556B BF556C BF556B 23SHt. bbS3031 S3C marking

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 KST1623O

    LF 358

    Abstract: No abstract text available
    Text: PLASTIC T-1 PAIR OPTOELECTRONICS QPC1213 il .018 0.46 SQ . 1Q. ±003 ( ± 0 . 0 8 ) * tò r i? » ) ^ TYP 2 PLCS. “R . _ 7 / l4 5 (3 68) 018(0.4_6)S_Q ^ " ^ \ 165'(4 . 19) ±.003 (±0.08) TYP 2 PLCS! 145(3 68) INFRARED LED PH O TO TRANSISTOR ST2138 ST2138


    OCR Scan     		PDF QPC1213 ST2138 QPC1213 LF 358

    L4811

    Abstract: L4810
    Text: December 1994 PRELIM INARY Micro Linear M L4 8 1 0 , M L4811 High Frequency Power Supply Controller GENERAL DESCRIPTION The ML4810 and ML4811 High Frequency PWM Controllers are optimized for use in Switch Mode Power Supply designs running at frequencies to 1MHz. The


    OCR Scan     		PDF L4811 ML4810 ML4811 ML4810/11 GDD415S L4810, ML4811 1000pF) 000pF) L4810CP L4811 L4810

    nf029

    Abstract: MRA transistor 222280905001 BLV58 016C20 Philips capacitor 013
    Text: Philips Sem iconductors b b ä B IB l □ 0 2 cî 0 b l4 157 W A P X Product specification UHF linear push-pull power transistor 'N AMER PHILIPS/DISCRETE BLV58 b^E ]> Q UICK REFERENCE DATA RF performance at Th = 25 °C in a comm on em itter test circuit. FEATURES


    OCR Scan     		PDF BLV58 BLV58 OT289 PINNING-SOT289 MRA353 nf029 MRA transistor 222280905001 016C20 Philips capacitor 013