Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    L6 TRANSISTOR Search Results

    L6 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    L6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor mark l6

    Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
    Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units


    Original
    KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 transistor mark l6 KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel


    Original
    L2SC1623QLT1G 3000/Tape L2SC1623QLT3G 10000/Tape L2SC1623RLT1G L2SC1623RLT3G L2SC1623SLT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: UML6N Transistors General purpose transistor isolated transistor and diode UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. !Equivalent circuit (3) (2) (1) Tr2 (4) Di1 (6) !Packaging specifications Type UML6N UMT5 Package L6 Marking


    Original
    2SA2018 RB521S-30 SC-88A PDF

    L2SC1623QLT1G

    Abstract: L2SC1623RLT1G L2SC1623SLT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel


    Original
    L2SC1623QLT1G 3000/Tape L2SC1623QLT3G 10000/Tape L2SC1623RLT1G L2SC1623RLT3G L2SC1623SLT1G L2SC1623QLT1G L2SC1623RLT1G L2SC1623SLT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel


    Original
    L2SC1623QLT1G 3000/Tape L2SC1623QLT3G 10000/Tape L2SC1623RLT1G L2SC1623RLT3G L2SC1623SLT1G PDF

    L6 MARKING

    Abstract: 2SA2018 RB521S-30
    Text: UML6N Transistors General purpose transistor isolated transistor and diode UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. !Equivalent circuit (3) (2) (1) Tr2 (4) Di1 (6) !Packaging specifications Type UML6N UMT5 Package L6 Marking


    Original
    2SA2018 RB521S-30 L6 MARKING PDF

    medium power switching transistors

    Abstract: bss69r
    Text: PART OBSOLETE SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS69 BSS70 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R - L2 L3 L6 L7 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original
    BSS69 BSS70 BSS69R BSS70R BSS70 -10mA, -50mA, medium power switching transistors PDF

    BSS70

    Abstract: BSS70R bss69r BSS69 DSA003680
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS69 BSS70 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R - L2 L3 L6 L7 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40


    Original
    BSS69 BSS70 BSS69 BSS70 BSS69R BSS70R -10mA, DSA003680 PDF

    KST1623L7

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original
    KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 PDF

    DRAF143X

    Abstract: No abstract text available
    Text: DRAF143X Tentative Total pages page DRAF143X Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L6 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original
    DRAF143X DRAF143X PDF

    dra2143X

    Abstract: sot-23 l6
    Text: DRA2143X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143X Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L6


    Original
    DRA2143X DRC2143X UL-94 DRA2143X0L SC-59A O-236ts. dra2143X sot-23 l6 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25


    Original
    40D/06 B25/50 PDF

    transistor P18

    Abstract: No abstract text available
    Text: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions


    Original
    PDF

    K C2026 Y

    Abstract: C2026 Y transistor C2026 transistor C2003 c2026 transistor equivalent c2026 740l6000 transistor c2002 740L6010 74ol6010 equivalent
    Text: HIGH-SPEED LOGIC-TO-LOGIC OPTOCOUPLERS QUALITY TECHNOLOGIES LSTTLto O P T O /L O G /C \ tm PART NUMBER LOGIC COMPATIBILITY INPUT OUTPUT LOGIC FUNCTION OUTPUT CONFIGURATION 7 4 0 L6 0 0 0 740L6001 74 0 L6 0 1 0 740L6011 LSTTL LSTTL LSTTL LSTTL TTL TTL CMOS


    OCR Scan
    E50151) U/01/10/000910U K C2026 Y C2026 Y transistor C2026 transistor C2003 c2026 transistor equivalent c2026 740l6000 transistor c2002 740L6010 74ol6010 equivalent PDF

    transistor mark l6

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan
    KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 transistor mark l6 PDF

    transistor A 564

    Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan
    KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1823L5 KST1623L6 KST1623L7 KST1623L3 KST1623L4 KST1623L5 transistor A 564 L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6 PDF

    MARKING SA transistor

    Abstract: marking code ER transistor KST1623L6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current


    OCR Scan
    KST1623L3/L4/L5/L6/L7 D02S10S MARKING SA transistor marking code ER transistor KST1623L6 PDF

    L6 TRANSISTOR

    Abstract: transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature


    OCR Scan
    KST1623L3/L4/L5/L6/L7 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 L6 TRANSISTOR transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS69 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS R Q Q 7 ÌÌ ISSU E 2 - SEPTEM BER 1995 Q PARTMARKING DETAILS — BSS69 BSS70 BSS69RBSS70R- L2 L3 L6 L7 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V V CBO


    OCR Scan
    BSS69 BSS70 BSS69RBSS70RL2 BSS69 -50mA* -100mA* BSS70 100MHz 100kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan
    KST1623L3/L4/L5/L6/L7 KST1623O PDF

    leaa

    Abstract: ts 1683 2SA1421
    Text: O rd e rin g n u m b e r: EN 1 6 8 3 A 2SA1421/2SC3654 N o .l6 83 A PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO Switching Applications with Bias Resistor I •# Dae • Switching circuit, inverter circuit, interface oircu i^f/ür i ^ P c ^ r où


    OCR Scan
    2SA1421/2SC3654 2SA1421 leaa ts 1683 2SA1421 PDF

    bl 565 transistor

    Abstract: ATMEGA32-16AI DTA143TET1 EL630
    Text: UNCONTROLLED DOCUMENT 4 1 ,4 0 C L6 3 0 ] PART NUMBER REV. LDQ —2R 3 21 4N22R IA S Y A REV, E.C.N. NUMBER AND REVISION COMMENTS A E.C.N, #11149. ELECTRO-OPTICAL CHARACTERISTICS PARAMETER •a ,@oOoOoO . © [0 ,7 5 0 ] © 01 SW1 TYP MAX UNITS 635 RED


    OCR Scan
    EL630] 2R321 4N22RIASY bl 565 transistor ATMEGA32-16AI DTA143TET1 EL630 PDF

    bss69r

    Abstract: No abstract text available
    Text: BSS69 BSS70 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS69 - L2 BSS70 - L3 BSS69R - L6 BSS70R - L7 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BO L VALUE UNIT V V v CBO -4 0 C o lle cto r-E m itte r V oltag e V CEO -4 0 E m itter-B ase V o lta g e


    OCR Scan
    BSS69 BSS70 BSS69 BSS70 BSS69R BSS70R CHARAC80 PDF