Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    L770CRB Search Results

    L770CRB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUL770

    Abstract: No abstract text available
    Text: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●


    Original
    PDF BUL770 O-220 BUL770

    BUL770

    Abstract: No abstract text available
    Text: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●


    Original
    PDF BUL770 O-220 L770CFB L770CRB BUL770

    BUL770

    Abstract: No abstract text available
    Text: BUL770 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High


    Original
    PDF BUL770 O-220 BUL770

    Untitled

    Abstract: No abstract text available
    Text: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●


    Original
    PDF BUL770 O-220 UL770 L770CFB L770CRB

    Untitled

    Abstract: No abstract text available
    Text: BUL770 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 50 W TO-220 PACKAGE TOP VIEW hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature


    Original
    PDF BUL770 O-220 L770CFB L770CRB

    Untitled

    Abstract: No abstract text available
    Text: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●


    Original
    PDF BUL770 O-220 L770CFB L770CRB