M7707
Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Text: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone
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MSM7707
MSM7707
32kbps)
Hz/12
b724240
0D257
TQFP100-P-1414-0
M7707
rd201
PLD-10
imv D6-11
BV 726 C 1 Converter
w5753
fd187
sGCT function
PR 161A
RD202
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PDF
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1X3 diode
Abstract: 04ti
Text: O K I electronic components PC I 1X2, 1X3 SERIES Unidirectional Optical M O S Relay GENERAL DESCRIPTION The OCM1X2 and OCM1X3 Series are unidirectional DC optical MOS relays, offering lower drive current than the OCM1XO / 1X1 Series. The input portion is a Ga As infrared light emitting diode. The
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10-mA
b72424D
24E4G
L7E4240
1X3 diode
04ti
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PDF
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MSM5116180-70
Abstract: MSM5116180-80
Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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MSM5116180_
576-Word
18-Bit
MSM5116180
cycles/64ms
MSM5116180-70
MSM5116180-80
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PDF
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Bv 42 transistor
Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64ms
Bv 42 transistor
M5116
tsop50
42-PIN
50-PIN
MSM51V16190-70
MSM51V16190-80
TSQP28-P-400-K
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PDF
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
Bv 42 transistor
tsop50
42-PIN
MSM5116190-70
MSM5116190-80
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I electronic components KGL2135 1.7 GHz Two-Modulus Prescaler GENERAL DESCRIPTION The KGL2135 is a two-modulus prescaler designed for PLL frequency synthesizers. The device divides the input frequency by 128 or 130, with mode selection. FEATURES • Toggle frequency: 1.7 GHz
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KGL2135
KGL2135
2M540
DD22fibS
b7E4240
L7E4240
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MSM6641
Abstract: gd2403
Text: O K I Semiconductor MSM6641/6641 E-xx Built-in Rem ote Control Transm ission C ircuit 4-B it M icro co n tro ller GENERAL DESCRIPTION The M SM 6641, pow ered by a single battery, is a 4-bit m icrocontroller fabricated in O K I's lowvoltage C M O S technology. A rem ote-control output generator built into this device provides
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MSM6641/6641E-XX
MSM6641,
MSM6641
MSM6641)
MSM6641E)
S42M0
gd2403
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PDF
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26-PIN
Abstract: MSM514 ZIP20-P-400
Text: O K I Semiconductor MSM514101 B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.
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MSM514101B/BL
304-Word
MSM514101B/BL
1024cycles/16ms,
128ms
A0-A10
26-PIN
MSM514
ZIP20-P-400
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PDF
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a11u
Abstract: taser circuit 42-PIN DD1752
Text: O K I Semiconductor MSM51V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V16160 is OKI's CMOS silicon gate process technology.
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MSM51V16160_
576-Word
16-Bit
MSM51V16160
cycles/64ms
a11u
taser circuit
42-PIN
DD1752
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PDF
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.
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MSM5117190
576-Word
18-Bit
MSM5117190
cycles/32ms
Bv 42 transistor
tsop50
42-PIN
MSM5117190-70
MSM5117190-80
SOJ42-P-400
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PDF
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LM1240
Abstract: fujikura pressure 103AT SENSOR
Text: OKI Semiconductor MSM64167-002 Clo ck with Weather Forecasting Function GENERAL DESCRIPTION This manual explains the functions, programming specifications, and operations of the standard clock program with built-in-weather forecasting function. The standard clock program uses the
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MSM64167-002
MSM64167-002
12-hour/24-hour
b724240
80-PIN
QFP80-P-1420-K
QFP84-P-1420-BK
LM1240
fujikura pressure
103AT SENSOR
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM531001B 131,072-Word x 8-Bit Mask ROM DESCRIPTION The OKI MSM531001B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531001B operates on a single 5.0 V power supply and is TTL compatible. The chips asynchro
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MSM531001B
072-Word
MSM531001B
L7E4240
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PDF
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MSM51V17180-70
Abstract: MSM51V17180-80
Text: O K I Semiconductor MSM51V17180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is OKI's CMOS silicon gate process technology.
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MSM51V17180
576-Word
18-Bit
MSM51V17180
MSM51VI7180
2048cycles/32ms
MSM51V17180-70
MSM51V17180-80
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PDF
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32-PIN
Abstract: MSM5116900-70 MSM5116900-80 B724e
Text: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.
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MSM5116900
152-Word
MSM5116900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
MSM5116900-70
MSM5116900-80
B724e
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I electronic components 0L5112L_ 1.55 |im DFB Laser Butterfly Module GENERAL DESCRIPTION The OL5112L is a 1.55 [im DFB laser in a 14-pin "butterfly" package. Having rated output power 2 mW, this laser can be used in a telecom applications and high speed WDM systems.
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0L5112L_
OL5112L
14-pin
2424Q
G0255Q5
OL51121-
OL5112L
L7E4240
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Sem iconductor M SM6650 External ROM Drive Speech Synthesis LSI GENERAL DESCRIPTION MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the
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SM6650
MSM6650,
MSM6376
12-bit
MSM6650
MSM6650
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PDF
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a719
Abstract: ZIP20-P-400 package zip-20 MSM51V4256A MSM51V4256A-10 MSM51V4256A-70 MSM51V4256A-80
Text: O K I Semiconductor M SM 51V4256A_ 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V4256A is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V4256A achieves high integration, high-speed operation, and low-power
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MSM51V4256A_
144-Word
MSM51V4256A
20-pin
26/20-pin
a719
ZIP20-P-400
package zip-20
MSM51V4256A-10
MSM51V4256A-70
MSM51V4256A-80
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PDF
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oki m6650
Abstract: m6650 oki msm6376 zd 3.1v CD T3 32 F11 HEM BTU 10/400 AR76 QFP64-P-1420-V1K PRBC MSM6650
Text: O K I Sem iconductor MSM6650 External ROM Drive Speech Synthesis LSI GENERAL D ESCR IPTIO N MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the
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MSM6650
MSM6650,
MSM6376
12-bit
MSM6650
00MHz,
AR76-202
b724240
M6650
MSM27C101
oki m6650
m6650
oki msm6376
zd 3.1v
CD T3 32 F11 HEM
BTU 10/400
AR76
QFP64-P-1420-V1K
PRBC
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PDF
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1001 dl pwm
Abstract: pwm 1001 1002 MSC1190 12v AC to DC CIRCUIT DIAGRAM for led tube lights oki led driver 7-Segment Display Driver with Decoder 3-DIGIT 7-SEGMENT LED DISPLAY
Text: 5ÔE D • b ? EH2HD 0 0 1 4 S T Ô 3b7 « O K I J O K I Semiconductor M S C 1 1 9 0 O K I %.09 SEMI CONDUCTOR GROUP 7-SEGMENT DRIVER GENERAL DESCRIPTION T he MSC1190 is a Bi-CMOS structure static d isplay driver to directly drive a vacuum fluorescent VF display tube. The driver
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0014STÃ
MSC1190
MSC1190
56-pin
35-bit
18Vmax)
1001 dl pwm
pwm 1001 1002
12v AC to DC CIRCUIT DIAGRAM for led tube lights
oki led driver
7-Segment Display Driver with Decoder
3-DIGIT 7-SEGMENT LED DISPLAY
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PDF
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transistor W2W
Abstract: w2w transistor oki Package SOJ 32-PIN A204 MSM51V17900-70 MSM51V17900-80 uras 14
Text: O K I Semiconductor MSM51V17900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.
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MSM51V17900_
152-Word
MSM51V17900
MSM51VI7900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
transistor W2W
w2w transistor
oki Package SOJ
32-PIN
A204
MSM51V17900-70
MSM51V17900-80
uras 14
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PDF
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