LARGE SIGNAL IMPEDANCES TRANSISTOR Search Results

LARGE SIGNAL IMPEDANCES TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

LARGE SIGNAL IMPEDANCES TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ofdm predistortion Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor Text: May 2009 Short range wireless UWB GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based	Original	PDF
MRF873 Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and	Original	PDF	AN1526/D AN1526 AN1526/D* MRF873 j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances: Practical Considerations Prepared by: Alan Wood and Bob Davidson	Original	PDF	AN1526/D AN1526 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor
MRF873 Abstract: motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1526/D AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances:	Original	PDF	AN1526/D AN1526 MRF873 motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers
Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Abstract: CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR Text: Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Bradley J. Millon1, Simon M. Wood, Raymond S. Pengelly Cree Inc. 3026 E Cornwallis Rd Research Triangle Park, NC 27709, USA 1 brad_millon@cree.com Abstract — 2.5 and 5 Watt average power 15 and 30 Watt peak	Original	PDF	5030-TB Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR
motorola rf Power Transistor Abstract: transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849 Text: Order this document by AN282A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN282A SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters, and	Original	PDF	AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849
GaN ADS Abstract: power transistor gan s-band CGH40045 simple circuit diagram of samsung mobile with int Mobile WiMAX abstract SC-10 maek GaN amplifier 100W power amplifier classe d schematic diagram 100w amp schematic diagram Text: A Novel Design Method of Highly Efﬁcient Saturated Power Ampliﬁer based on Self-Generated Harmonic Currents Jangheon Kim1,2 , Junghwan Moon1 , Jungjoon Kim1 , Slim Boumaiza2 , and Bumman Kim1 Department of Electrical Engineering, Pohang University of Science and Technology, Gyeongbuk 790-784,	Original	PDF
transistor equivalent table chart Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941 Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN282A/D AN282A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Systemizing RF Power Amplifier Design	Original	PDF	AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
National "Audio Handbook" Abstract: PF5102 2N4250 strain gauge amplifier National LM194 LM394 AN-222 LM118 Cold-Junction Text: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool, yet have received less and less attention over the last few years. This is primarily due to the proliferation of high-performance monolithic circuits which are replacing	Original	PDF	LM194 absolute959 National "Audio Handbook" PF5102 2N4250 strain gauge amplifier National LM394 AN-222 LM118 Cold-Junction
National "Audio Handbook" Abstract: PF5102 Lm194 high accuracy riaa riaa preamp analog devices balanced riaa AN-222 lm114 operational amplifier discrete schematic phono preamp Text: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool, yet have received less and less attention over the last few years. This is primarily due to the proliferation of high-performance monolithic circuits which are replacing	Original	PDF	tran4466 AN-222 National "Audio Handbook" PF5102 Lm194 high accuracy riaa riaa preamp analog devices balanced riaa AN-222 lm114 operational amplifier discrete schematic phono preamp
PF5102 equivalent Abstract: National "Audio Handbook" LM194 lm114 National AN-222 C1995 LM114/PF5102 equivalent LM118 PF5102 Text: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool yet have received less and less attention over the last few years This is primarily due to the proliferation of highperformance monolithic circuits which are replacing many	Original	PDF
ATC700a Abstract: J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.	Original	PDF	BLF2022-90; OT502A AN01001 ATC700a J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier
marking C8 amplifier Abstract: ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08 Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.	Original	PDF	BLF2022-90; OT502A AN01001 marking C8 amplifier ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08
Untitled Abstract: No abstract text available Text: High Power RF LDMOS Transistors for Avionics Applications A novel approach to the use of LDMOS transistors in pulsed Avionics Applications By Hans Mollee Steven O’Shea Paul Wilson Korne Vennema 1 Introduction; Today’s continuous growth of airborne freeways, adds new challenges in safety and efficiency which	Original	PDF

500w sound amplifier circuit diagram Abstract: IN7100N SSM2143 xlr to mini jack 1200P 1200S 1203P 1203S Jensen Transformers 1206S Text: InGeniusâ High-CMRR Balanced Input Line Receiver T H AT Corporation THAT 1200, 1203, 1206 FEATURES • APPLICATIONS High common-mode rejection typical 90 dB at 60 Hz maintained under real-world conditions · Balanced input stages · Summing amplifiers ·	Original	PDF
BROWN BOVERI guanella Abstract: transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent Text: RF APPLICATION NOTE: PUSH-PULL CIRCUITS and WIDEBAND TRANSFORMERS Push-Pull Transistors Semelab plc produces a wide range of push-pull MOSFETs and this application note is intended as a guide to some circuit design principles which are particularly appropriate when using these	Original	PDF	0-89000679-7X ARRL1990; BROWN BOVERI guanella transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent
NEL230153 Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303 Text: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB	OCR Scan	PDF	h427414 T-33-T- NEL2300 V3301 NEL230353 NEL230153 GG01 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
230Z Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111 Text: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB	OCR Scan	PDF	h427414 T-33-T- NEL2300 Emitterj17 bHS7414 V3301 -r-33 NEL230353 230Z V3301 NEL230253 L230C NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
TRANSISTOR W2T Abstract: HP8757 LMX2215 LMX2216B w2t transistor Text: Integrateci LNA and Mixer National Sem iconductor Application N ote 8 8 4 BaSiCS A Da° ABSTRACT involve transistors and the most popular ones are built from the basic Gilbert cell structure. Some higher frequency ac tive mixers exploit the nonlinear characteristics of high gain	OCR Scan	PDF
anzac directional couplers Abstract: anzac anzac frequency Anzac h-183-4 Text: AMPLIFIER APPLICATION NOTE INTRODUCTION Broadband radio frequency amplifiers, designed for operation below microwave frequencies, gen erally use high-gain bipolar transistors in combina tion with negative feedback circuitry. This note presents a discussion of feedback with emphasis on	OCR Scan	PDF
TPV3100 Abstract: TPV-3100 transistor tpv3100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T P V 31 00 The RF Line VHF Linear Power Transistor . . . designed fo r linear, p ush -p u ll a m p lifie rs in VHF Band III. The TPV3100 u tilizes gold m e ta llizatio n , d iffu se d e m itte r ballast resistors and a lo w th e rm a l resistance header to	OCR Scan	PDF	TPV3100 TPV-3100 transistor tpv3100
GP-009 Abstract: ULN3718M Text: 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other battery-operated equipment. The low-power audio amplifier’s wide	OCR Scan	PDF	ULN3718M GP-009
ULN3718M Abstract: No abstract text available Text: LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other battery-operated equipment. The low-power audio amplifier's wide	OCR Scan	PDF	ULN3718M
Untitled Abstract: No abstract text available Text: LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other battery-operated equipment. The low-power audio am plifier’s wide	OCR Scan	PDF	ULN3718M

LARGE SIGNAL IMPEDANCES TRANSISTOR Search Results

LARGE SIGNAL IMPEDANCES TRANSISTOR Result Highlights (5)

LARGE SIGNAL IMPEDANCES TRANSISTOR Datasheets Context Search

ofdm predistortion

MRF873

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

MRF873

Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications

motorola rf Power Transistor

GaN ADS

transistor equivalent table chart

National "Audio Handbook"

National "Audio Handbook"

PF5102 equivalent

ATC700a

marking C8 amplifier

Untitled

500w sound amplifier circuit diagram

BROWN BOVERI guanella

NEL230153

230Z

TRANSISTOR W2T

anzac directional couplers

TPV3100

GP-009

ULN3718M

Untitled