Untitled
Abstract: No abstract text available
Text: 1.25Gbps 1310nm DFB Laser Diode Module 1.25Gbps 1310nm DFB Laser Diode Module Features • Center wavelength 1310nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC
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25Gbps
1310nm
1310nm
-20oC
25Gbps
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps 1310nm DFB Laser Diode Module 1.25Gbps 1310nm DFB Laser Diode Module Features • Center wavelength 1310nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC
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25Gbps
1310nm
1310nm
-20oC
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps 1310nm DFB Laser Diode Module 1.25Gbps 1310nm DFB Laser Diode Module Features • Center wavelength 1310nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC
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25Gbps
1310nm
1310nm
-20oC
100cm
25Gbps
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps 1550nm DFB Laser Diode Module 1.25Gbps 1550nm DFB Laser Diode Module Features • Center wavelength 15500nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC
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25Gbps
1550nm
15500nm
-20oC
100cm
25Gbps
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps 1550nm DFB Laser Diode Module 1.25Gbps 1550nm DFB Laser Diode Module Features • Center wavelength 15500nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC
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25Gbps
1550nm
15500nm
-20oC
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps CWDM Laser Diode Module receptacle housing with FC, ST or SC connector Specifications Optical And Electrical Characteristics T=25+/-3 °C unless specified otherwise Parameter Symbol Test Conditions Peak Wavelength λc Po, To=-20~85°C Threshold Current
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25Gbps
1610nm
25Gbps,
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps CWDM Laser Diode Module receptacle housing with FC, ST or SC connector Specifications Optical And Electrical Characteristics T=25+/-3 ° C unless specified otherwise Parameter Symbol Test Conditions Peak Wavelength λc Po, To=-20~85°C Threshold Current
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25Gbps
1610nm
25Gbps,
100cm
25Gbps
-20oC
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps CWDM Laser Diode Module receptacle housing with FC, ST or SC connector Specifications Optical And Electrical Characteristics T=25+/-3 °C unless specified otherwise Parameter Symbol Test Conditions Peak Wavelength λc Po, To=-20~85°C Threshold Current
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25Gbps
1610nm
25Gbps,
100cm
25Gbps
-20oC
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ML6101A
Abstract: laser diode with rise time 0.4ns ML6411C Mach-Zehnder Interferometer low noise, 780nm, 5mw 780nm 10mW laser diodes mach zehnder interferometer ML6411 ML6411A ML6701A
Text: M ITSUBISHI LASER DIODES ML6XX1A SERIES MITSUBISHI DISCRETE SC 31E D I b5Mciñ2cl 0014144 1 S M I T S @ FOR O PTICA L INFORMATION S Y S T E M S TYPE NAME [ ML6101A, ML6411A, ML6411C, ML6701A 'T<4\-os DESCRIPTION FEATURES Mitsubishi ML6XX1A are AIGaAs laser diodes emitting light
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b24tifi2c1
ML6101A,
ML6411Ã
6411C,
ML6701A
780nm
10mW/facet
ML6101A
laser diode with rise time 0.4ns
ML6411C
Mach-Zehnder Interferometer
low noise, 780nm, 5mw
780nm 10mW laser diodes
mach zehnder interferometer
ML6411
ML6411A
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ML3401
Abstract: ML3411 34182 ML3101 laser diode with rise time 0.4ns
Text: MITSUBISHI L A S E R DIODES ML3XX1 SERIES MITSUBISHI DISCRETE SC 31E D B ^24^02"] Ü 0 1M Ü3 S M BIMITS FOR OPTICAL INFORMATION S Y S T E M S 1 - 4 1 - 0 5 TYPE NAME M L3101, M L3401, M L3 4 1 1 DESCRIPTION FEATURES M itsubishi ML3XX1 are AlGaAs laser diodes em itting light
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ML3101,
ML3401,
ML3411
815nm
ML3401
ML3411
34182
ML3101
laser diode with rise time 0.4ns
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I L A S E R D IO D E S ML3XX1 SERIES MITSUBISHI DISCRETE SC 31E D B ^24^02"] ü ü m ü 3 S M BI MI TS F O R O P T IC A L IN F O R M A T IO N S Y S T E M S 1 - 4 1 - 0 5 TYPE NAME ML3101, ML3401, ML3411 DESCRIPTION FEATURES Mitsubishi ML3XX1 are AlGaAs laser diodes emitting light
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PDF
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ML3101,
ML3401,
ML3411
815nm
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ia2c
Abstract: ML6101A Laser Diode for cd rw
Text: M IT S U B IS H I LASER DIODES ML6XX1A SERIES MITSUBISHI DISCRETE SC TYPE NAME Wa 31E D I_ ODimMH 1 EMITS FOR O P T IC A L IN FO R M A TIO N S Y S T E M S M L 6 1 0 1 A M L 6 7 0 1 A , M 6 4 1 1 A L , M T DESCRIPTION FEATURES Mitsubishi ML6XX1A are AIGaAs laser diodes emitting light
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780nm
10mW/facet
ia2c
ML6101A
Laser Diode for cd rw
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C11371
Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Text: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition
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schematic diagram tv sony kv 2197
Abstract: scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76
Text: HOW TO USE THIS BOOK If you know the MODEL NUMBER, Use the Model Index on the INSIDE FRONT COVER. If you know the PRODUCT TYPE, Use the TABBED TABLE OF CONTENTS on page v. Or, use the SELECTION GUIDE TABLES at the front of each tabbed section. If you know the M ODEL
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TX712
TX811
schematic diagram tv sony kv 2197
scheme tv color tucson
LOG100
ADC600
ISO106
sony ccd
ADC-817
adc817
SDM857
SHC76
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