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    LB 1300 TRANSISTOR Search Results

    LB 1300 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    LB 1300 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU204

    Abstract: TRANSISTOR 1300
    Text: Silicon Power Transistor BU204 Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of large screen colour deflection circuits. Specification Fetaures : F Horizontal Deflection NPN Silicon Power Transistor


    Original     		PDF BU204 O-204AA 1300Adc BU204 TRANSISTOR 1300

    transistor bu208

    Abstract: BU208 TRANSISTOR 1300
    Text: Silicon Power Transistor BU208 Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of large screen colour deflection circuits. Specification Fetaures : F High Voltage NPN Silicon Power Transistor F 5 Amp / 1300 V device in TO-204AA [ TO-3 ] package


    Original     		PDF BU208 O-204AA transistor bu208 BU208 TRANSISTOR 1300

    darlingtion transistor 2 amp

    Abstract: TIP150 NPN Transistor 50A 400V
    Text: Transistor Features: • Collector-Emitter Sustaining Voltage VCEC SUS = 30V (Minimum) • Collector-Emitter Saturation Voltage VCE (sat) = 2.0V (Maximum) at IC = 5.0 A • Reverse-Base SOA - 300V to 400V at 7A Dimensions Minimum Maximum A 14.68 15.31 B


    Original     		PDF TIP150 O-220 darlingtion transistor 2 amp TIP150 NPN Transistor 50A 400V

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    BU205

    Abstract: BU204
    Text: ¿2&M0SPEC HORIZONTAL DEFLECTION TRANSISTOR NPN .specifically designed for use in large screen color deflection circuits. BU204 BU205 FEATURES: * Collector-Emitter Sustaining Voltage v c e x = 1300 V Min. - BU204 = 1500 V (Min.)-BU205 * Glassivated Base-Collector Junction


    OCR Scan     		PDF BU204 -BU205 BU204 BU205 BU205

    BU205

    Abstract: BU204 TO115
    Text: HORIZONTAL DEFLECTION TRANSISTOR NPN .specifically designed for use in large screen color deflection circuits. BU204 Boca Semiconductor Corp. BSC http ://www.bocasemi.com FEATURES: * Collector-Emitter Sustaining Voltage v c e x = 1300 V Min. - BU204 = 1500 V (Min.)-BU205


    OCR Scan     		PDF BU204 -BU205 BU204 BU205 BU205 TO115

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUÜ403A GENERAL DESCRIPTION High-voltage, high-sf>eed planar-passivated npn power switching transistor in T0220AB envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems,


    OCR Scan     		PDF T0220AB BUJ403A

    philips Electronic ballast t5

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic fuli-pack envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control


    OCR Scan     		PDF BUJ403AX philips Electronic ballast t5

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3097 2SA1710/2SC4490 PNP/NPN Epitaxial Planar Silicon Transistors SAtVO High-Defmition CRT Display Video Output Applications '• iV V y ■' 1 I • Features ■High breakdown voltage V ceo — 300V ■ Excellent high frequency characteristic


    OCR Scan     		PDF 2SA1710/2SC4490 2SA1710

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT690B ISSUE 3 - OCTOBER 1995 FEATURES * * * - Very lo w equivalent on-resistance; Gain o f 400 at lc=1 Am p Very lo w saturation voltage RCEIsat 125mi2 a t 2A APPLICATIONS


    OCR Scan     		PDF FZT690B 125mi2 100nA 50MHz 500mA, 50rnA,

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT690B - IS S U E 3 -O C T O B E R 1995 FEATURES * * Very low equivalent on-resistance; R CE|sat 125m£l at 2 A Gain of 400 at lc=1 A m p * Very low saturation voltage A P P L IC A T IO N S


    OCR Scan     		PDF FZT690B 500mA, 50MHz H70S7fl

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6790 ISSUE 1 - NOVEMBER 1995 - Ci ΠBi c itr T2 c2i m c2 q NPN Ei Bz PNP E2 i _ PARTMARKING DETAIL - T6790 ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER Collector-Base Voltage


    OCR Scan     		PDF ZDT6790 T6790 -10mA* -10mA, -500mA, -50mAr 50MHz -50mA -50mA,

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - M AY 94 FEATURES * * * 45 V olt VCE0 Gain o f 400 at lc=1 Am p Very lo w saturation voltage APPLICATIONS * Darlington replacem ent * Siren Drivers * * Battery powered circuits M o to r drivers


    OCR Scan     		PDF ZTX690B 50MHz 500mA, 300ns.

    BU204

    Abstract: No abstract text available
    Text: BU204 BU204 NPN POWER TRANSISTOR Horizontal Deflection Circuits in Black and White TV Receiver Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11,15 12,25 26,67 3,84 4,19 -


    OCR Scan     		PDF BU204 BU204

    BU208

    Abstract: BU208A bu208 transistor transistor bu208 BU207
    Text: 1989963 CEN T R A L S E M I C O N D U C T O R 92D 00379 [T2 ai fe ? ¿fe-vi. DE H n fi ^ 1 , 3 DOODgTT 7 s r &arp„ S@issig©Bi£iiiet@r €@pp. ä*" Centrisi T ' 3 3- Q'T BU207 BU208 BU208A NPN SILICON POWER TRANSISTOR S@mg£©if£lP€t@r £@rp. Central


    OCR Scan     		PDF BU207, BU208, BU208A BU207 BU208 600ICS bu208 transistor transistor bu208

    Untitled

    Abstract: No abstract text available
    Text: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323


    OCR Scan     		PDF DQ25T47 PMST4403 OT323 MAM096 bbS3T31

    BDX43

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 FEATURES PINNING • High current max. 1 A PIN D ESCRIPTIO N • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector, connected to metal part of


    OCR Scan     		PDF BDX42; BDX43; BDX44 O-126; BDX45 BDX47. BDX42 BDX43 BDX44

    bipolar transistor td tr ts tf

    Abstract: MJE18604D2
    Text: MOTOROLA Order this document by MJE18604D2/D SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain B ipolar NPN Pow er Transistor w ith In teg rated C o llec to r-E m itter Diode and B u ilt-in E fficien t A n tisatu ratio n N etw o rk for


    OCR Scan     		PDF MJE18604D2/D MJE18604D2 MJE18604D2 2PHX34559C bipolar transistor td tr ts tf

    Untitled

    Abstract: No abstract text available
    Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT690 ISSUE 1 - NOVEMBER 1995 Ci L L —I—I Bi c ,n = =□ c? I r Z D b2 I I Ey Cîl I Ei PAFtTMARKING DETAIL- T690 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V C BO 45


    OCR Scan     		PDF ZDT690 DGQTS07 D0CH50Ã

    transistor d 1933

    Abstract: transistor marking code p2T PMST4403 VC80 marking code P2T
    Text: Hi Philips Semiconductors N bbSBTBl AHER 0 0 2 5 T 47 b 47 HIAPX PH ILIPS/D ISCR ETE b?E Product specification J> PNP switching transistor FEATURES PMST4403 PIN CONFIGURATION • S-mini package » High collector current. DESCRIPTION PNP silicon planar epitaxial


    OCR Scan     		PDF 0025T47 PMST4403 OT323 PMST4403 MAM096 transistor d 1933 transistor marking code p2T VC80 marking code P2T

    buh713

    Abstract: GC328 121-237 CW2015
    Text: rZ 7 SGS-THOMSON ^ 7# [M œ m iO T * ® BUH713 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE# E817 3 4 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR


    OCR Scan     		PDF BUH713 ISOWATT218 E81734 BUH713 SC03DBI GC328 121-237 CW2015

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - M AY 94 FEATURES * 45 Volt VCE0 * Gain of 400 at lc=1 Am p * Very low saturation voltage A PPLICATIO N S * Darlington replacement * Siren Drivers * * Battery powered circuits Motor drivers ABSOLUTE M A X IM U M RATINGS.


    OCR Scan     		PDF 50MHz ZTX690B

    FZT690B

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT690B ISSUE 3 - OCTOBER 1995 - FE A T U R E S * * * Very low equivalent on-resistance; B CEisat 1 2 5 m il a t 2A Gain of 400 at lc =1 Amp Very low saturation voltage A PPLICA TIO N S


    OCR Scan     		PDF FZT690B 300fis. FZT690B

    transistor bc 237c

    Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
    Text: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers


    OCR Scan     		PDF IAL66 15A3DIN transistor bc 237c transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206