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    LB401 Price and Stock

    APEM Inc AV24LB401

    SWITCH PUSHBUTTON SPDT 5A 250V
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    Mouser Electronics AV24LB401
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    Newark AV24LB401 Bulk 16
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    Master Electronics AV24LB401
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    JRH Electronics ALBFLB40100

    ALBFLB40100 Cable Ties
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    DigiKey ALBFLB40100 1
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    Samtec Inc EBCM-1-4-10-1-L-B-40-1-L-A

    EXAMAX 2.00 MM HIGH-SPEED BACKPL
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    Samtec Inc EBCM-1-4-10-1-L-B-40-1-R-A

    EXAMAX 2.00 MM HIGH-SPEED BACKPL
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    Samtec Inc EBCM-1-6-10-1-L-B-40-1-R-A

    EXAMAX 2.00 MM HIGH-SPEED BACKPL
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    LB401 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LB401 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Original PDF

    LB401 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF LB401

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF LB401

    TB200

    Abstract: amidon BN-61-202 c12 ph zener diode
    Text: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200


    Original     		PDF TB200 20-1000MHz LB401 TB200 28Vdc, 20Mhz 200B104KW50X 100B100GW500X amidon BN-61-202 c12 ph zener diode

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF LB401

    TB207

    Abstract: UT85 coax LB401 NJM78L08A UT85-15 UT85-50 120PF
    Text: 15 30 45 60 75 90 105 30 60 90 120 1 1 2 2 4 P in in W a tts 5 6 7 8 3 4 5 6 P in in W a tts Efficiency @ 65W= 31% 7 TB207 LB401 Freq=750MHz Vds=28Vdc Idq=1.6A 3 Efficiency @ 65W = 43% Linear @12W P1dB=65W 8 TB207 LB401 Freq=500MHz Vds=28Vdc Idq=1.6A 9 9 10


    Original     		PDF TB207 LB401 750MHz 28Vdc 500MHz UT85 coax NJM78L08A UT85-15 UT85-50 120PF

    LB401

    Abstract: TRANSISTOR 1300
    Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF LB401 LB401 TRANSISTOR 1300

    at 8515

    Abstract: LB401 TB200 20AWG Polyfet RF Devices 20-1000Mhz
    Text: Polyfet RF Devices TB200#LB401 Vds=28Vdc Idq=1.0A Gain Flatness/Efficiency 20 100 Gain 90 15 80 10 60 Efficiency 50 Pout fixed at 60W 5 40 30 100 200 300 400 500 Freq in MHz 600 700 800 900 20 1000 Eff in % Gain in dB 70 Polyfet RF Devices TB200#1 LB401 Freq=20MHz Vds=28Vdc Idq=1.0A


    Original     		PDF TB200 1LB401 28Vdc LB401 20MHz 500MHz at 8515 20AWG Polyfet RF Devices 20-1000Mhz

    LB401

    Abstract: LDMOS TRANSISTOR 1300
    Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF LB401 LB401 LDMOS TRANSISTOR 1300

    166A

    Abstract: TB166A LQ801 FT50A-43 LB401 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz
    Text: Polyfet RF Devices TB-166A LQ801-> LB401 Gain/Efficiency vs Freq; Vds=28Vdc Idq=1.2A 30 100 27 90 24 80 Gain 21 70 15 Pout fixed at 60W 60 Efficiency 12 50 9 40 6 30 3 40 80 120 160 200 240 280 Freq in MHz 320 360 400 440 480 20 520 Eff in % Gain in dB 18


    Original     		PDF TB-166A LQ801---> LB401 28Vdc 30MHz 166A TB166A LQ801 FT50A-43 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF LB401

    LK141

    Abstract: 60W VHF TV RF amplifier
    Text: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation


    Original     		PDF ISO9000 5208A 50Vdc 4Q2012. LK141 60W VHF TV RF amplifier

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original     		PDF L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet

    TB191

    Abstract: LB401 NJM78L08A UT85-50 47PF
    Text: T B 1 9 1 P o u t /G a i n v s P i n f = 8 5 0 M H z V d s = 2 8 V d c I d q = . 8 A 140 15.0 120 14.0 P1dB=100W 100 Pout 13.0 80 12.0 60 11.0 Gain 40 E fficiency@ 1 0 0 W = 5 5 % 10.0 20 9.0 3 6 9 12 15 Pin in Watts T B 1 9 1 G a in/E f f i c i e n c y v s F r e q


    Original     		PDF TB191 850MHz 28Vdc NJM78L08A 270pF 18AWG, LB401 UT85-50 LB401 NJM78L08A UT85-50 47PF

    L64000

    Abstract: 16217 13X5 40374 cy7c516 pin diagram of 7476 D1986 L64017 MPY016K am29516
    Text: L64016 L64017 16-Bit HCMOS Multipliers LSI LOGIC Preliminary Description The L 6 4 0 16 and L 6 4 0 17 are high speed 1 6 x 1 6-bit multipliers with on-chip scan testing. The L 6 4 0 1 6 has independent clocks for the X, Y, M S P and L SP regis­ ters. The L 6 4 0 1 7 has a single master clock and three


    OCR Scan     		PDF L64016 L64017 16-Bit L64017 DS040 L64000 16217 13X5 40374 cy7c516 pin diagram of 7476 D1986 MPY016K am29516

    40374

    Abstract: amd29510 L64012 TDC1010 carry select adder p1-5k LSP10 MSP 3410 D
    Text: L64010 L64011 L64012 16-Bit HCMOS Muttiplier-Accumulators LSI LOGIC LSI Logic Corporation 1551 McCarthy Blvd Milpitas CA 95035 408.433.8000 Telex 172153 h • 005783 Description The L64010 replicates industry standard functionality and pinout for a 64-pin DIP package. It includes a full


    OCR Scan     		PDF L64010 L64011 L64012 16-Bit 64-pin L64012 68-pin 40374 amd29510 TDC1010 carry select adder p1-5k LSP10 MSP 3410 D