LBAS16TT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode LBAS16TT1G S-LBAS16TT1G FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified
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LBAS16TT1G
S-LBAS16TT1G
AEC-Q101
SC-89
LBAS16TT1G,
463C-01
463C-02.
LBAS16TT1G
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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ZMM22
ZMM24
ZMM27
ZMM43
ZMM47
2x062h
gk105
1SS216
GK104
SMD Transistors w06
D20SB80
SMD marking 5As
D25SB80
LRB706F-40T1G
2x062
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS TA = 25oC Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)
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Original
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PDF
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LBAS16TT1G
SC-89
463C-01
463C-02.
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS TA = 25oC Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)
|
Original
|
PDF
|
LBAS16TT1G
SC-89
463C-01
463C-02.
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