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    LBC7 RONA Search Results

    LBC7 RONA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FLBC70354001 Amphenol Communications Solutions FLB Dome, NEMA ANSI C136.41, 76mm, 35mm Height, Black Visit Amphenol Communications Solutions
    FLBC70602001 Amphenol Communications Solutions FLB Dome, NEMA ANSI C136.41, 76mm, 60mm Height, Clear Visit Amphenol Communications Solutions
    FLBC70756001 Amphenol Communications Solutions FLB Dome, NEMA ANSI C136.41, 76mm, 75mm Height, Translucent Visit Amphenol Communications Solutions
    FLBC70134001 Amphenol Communications Solutions FLB Dome, NEMA ANSI C136.41, 76mm, 130mm Height, Black Visit Amphenol Communications Solutions
    FLBC70351001 Amphenol Communications Solutions FLB Dome, NEMA ANSI C136.41, 76mm, 35mm Height, Grey Visit Amphenol Communications Solutions

    LBC7 RONA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BCD8

    Abstract: 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS
    Text: A Deep Trench Isolation integrated in a 0.13um BiCD process technology for analog power ICs. H. Kitahara, T. Tsukihara, M. Sakai, J. Morioka*, K. Deguchi*, K. Yonemura*, T. Kikuchi*, S. Onoue*, K. Shirai*, K. Watanabe* and K. Kimura*. Toshiba Semiconductor Company, 3500 Matsuoka, Oita, Oita, 870-0197, Japan,


    Original
    7to30V BCD8 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS PDF

    LBC7

    Abstract: BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st 7to30V LBC7 RONA free transistor e2p
    Text: Ultra-low On-Resistance LDMOS Implementation in 0.13 m CD and BiCD Process Technologies for Analog Power IC's Koji Shirai, Koji Yonemura, Kiminori Watanabe, Koji Kimura System LSI Division, Toshiba Semiconductor Company, 2-5-1 Kasama, Sakae, Yokohama, Kanagawa/Japan,


    Original
    7to30V LBC7 BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st LBC7 RONA free transistor e2p PDF